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公开(公告)号：US20110024608A1
公开(公告)日：2011-02-03
申请号：US12533521
申请日：2009-07-31
申请人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
发明人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
CPC分类号： H01L31/107 , H01L31/022408 , H01L31/02327 , H01L31/03529 , Y02E10/50
摘要： A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
摘要翻译： 半导体光电探测器可以在半导体材料层的高场区域提供电荷载体雪崩倍增。 半导体电流放大器可以通过在高场区域附近的冲击电离提供电流放大。 多个金属电极形成在半导体材料层的表面上并被电偏置以产生不均匀的高电场，其中高电场强度加速雪崩电子 - 空穴对产生，其被用作有效的雪崩倍增 光电检测机制或雪崩冲击电离电流放大机制。
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公开(公告)号：US20100213561A1
公开(公告)日：2010-08-26
申请号：US12775084
申请日：2010-05-06
IPC分类号： H01L31/0232
CPC分类号： H01L31/1808 , G02B6/12004 , H01L31/02327 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.
摘要翻译： 光电子器件包括光电检测器特征，设置在光电检测器特征的至少一部分上方的界面层，以及设置在界面层的至少一部分上的垂直接触。 光电检测器特征包括锗并且可操作以将光信号转换成电信号。 界面层包括镍。 最后，垂直接触可操作地从光电检测器特征传输电信号。
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公开(公告)号：US08541734B2
公开(公告)日：2013-09-24
申请号：US13603567
申请日：2012-09-05
申请人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
发明人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
IPC分类号： H01L31/00 , H01L31/107
CPC分类号： H01L31/107 , H01L31/022408 , H01L31/02327 , H01L31/03529 , Y02E10/50
摘要： A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
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公开(公告)号：US08395103B2
公开(公告)日：2013-03-12
申请号：US13455507
申请日：2012-04-25
申请人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
发明人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
IPC分类号： H01L31/00 , H01L31/107
CPC分类号： H01L31/107 , H01L31/022408 , H01L31/02327 , H01L31/03529 , Y02E10/50
摘要： A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
摘要翻译： 半导体光电探测器可以在半导体材料层的高场区域提供电荷载体雪崩倍增。 半导体电流放大器可以通过在高场区域附近的冲击电离提供电流放大。 多个金属电极形成在半导体材料层的表面上并被电偏置以产生不均匀的高电场，其中高电场强度加速雪崩电子 - 空穴对产生，其被用作有效的雪崩倍增 光电检测机制或雪崩冲击电离电流放大机制。
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公开(公告)号：US20120326012A1
公开(公告)日：2012-12-27
申请号：US13603567
申请日：2012-09-05
申请人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
发明人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
IPC分类号： H01L31/107 , H03K17/06
CPC分类号： H01L31/107 , H01L31/022408 , H01L31/02327 , H01L31/03529 , Y02E10/50
摘要： A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
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公开(公告)号：US08232516B2
公开(公告)日：2012-07-31
申请号：US12533521
申请日：2009-07-31
申请人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
发明人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
IPC分类号： H01L31/00 , H01L31/107
CPC分类号： H01L31/107 , H01L31/022408 , H01L31/02327 , H01L31/03529 , Y02E10/50
摘要： A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
摘要翻译： 半导体光电探测器可以在半导体材料层的高场区域提供电荷载体雪崩倍增。 半导体电流放大器可以通过在高场区域附近的冲击电离提供电流放大。 多个金属电极形成在半导体材料层的表面上并被电偏置以产生不均匀的高电场，其中高电场强度加速雪崩电子 - 空穴对产生，其被用作有效的雪崩倍增 光电检测机制或雪崩冲击电离电流放大机制。
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公开(公告)号：US20090108384A1
公开(公告)日：2009-04-30
申请号：US11925170
申请日：2007-10-26
IPC分类号： H01L31/028 , H01L31/18
CPC分类号： H01L31/1808 , G02B6/12004 , H01L31/02327 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.
摘要翻译： 光电子器件包括光电检测器特征，设置在光电检测器特征的至少一部分上方的界面层，以及设置在界面层的至少一部分上的垂直接触。 光电检测器特征包括锗并且可操作以将光信号转换成电信号。 界面层包括镍。 最后，垂直接触可操作地从光电检测器特征传输电信号。
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公开(公告)号：US20120205523A1
公开(公告)日：2012-08-16
申请号：US13455507
申请日：2012-04-25
申请人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
发明人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
IPC分类号： H01L31/08 , H03K17/06 , H01L23/544
CPC分类号： H01L31/107 , H01L31/022408 , H01L31/02327 , H01L31/03529 , Y02E10/50
摘要： A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
摘要翻译： 半导体光电探测器可以在半导体材料层的高场区域提供电荷载体雪崩倍增。 半导体电流放大器可以通过在高场区域附近的冲击电离提供电流放大。 多个金属电极形成在半导体材料层的表面上并被电偏置以产生不均匀的高电场，其中高电场强度加速雪崩电子 - 空穴对产生，其被用作有效的雪崩倍增 光电检测机制或雪崩冲击电离电流放大机制。
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公开(公告)号：US07999344B2
公开(公告)日：2011-08-16
申请号：US12775084
申请日：2010-05-06
IPC分类号： H01L31/00
CPC分类号： H01L31/1808 , G02B6/12004 , H01L31/02327 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.
摘要翻译： 光电子器件包括光电检测器特征，设置在光电检测器特征的至少一部分上方的界面层，以及设置在界面层的至少一部分上的垂直接触。 光电检测器特征包括锗并且可操作以将光信号转换成电信号。 界面层包括镍。 最后，垂直接触可操作地从光电检测器特征传输电信号。
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公开(公告)号：US07790495B2
公开(公告)日：2010-09-07
申请号：US11925170
申请日：2007-10-26
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , G02B6/12004 , H01L31/02327 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.
摘要翻译： 光电子器件包括光电检测器特征，设置在光电检测器特征的至少一部分上方的界面层，以及设置在界面层的至少一部分上的垂直接触。 光电检测器特征包括锗并且可操作以将光信号转换成电信号。 界面层包括镍。 最后，垂直接触可操作地从光电检测器特征传输电信号。
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