公开(公告)号：US11502244B2

公开(公告)日：2022-11-15

申请号：US17106905

申请日：2020-11-30

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: H01L43/00 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01F10/32 ,  H01L43/02 ,  G11C11/56 ,  G11C11/02

Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

公开(公告)号：US10862024B2

公开(公告)日：2020-12-08

申请号：US16654596

申请日：2019-10-16

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC: H01L43/10 ,  H01F10/32 ,  H01F41/32 ,  B82Y25/00 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L27/22

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

公开(公告)号：US10861522B2

公开(公告)日：2020-12-08

申请号：US16426237

申请日：2019-05-30

Applicant: SONY CORPORATION

Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  G11C11/56 ,  H01L43/12 ,  H01F10/32 ,  H01L27/22 ,  G11B5/39

Abstract: Provided is a storage device that includes a magnetization fixed layer, an intermediate layer, and a storage layer. The magnetization fixed layer has magnetization in an orientation perpendicular to a film surface and a constant magnetization direction. The intermediate layer includes a non-magnetic body and is disposed on the magnetization fixed layer. The storage layer includes an outer circumferential portion and a center portion. The storage layer is disposed to face the magnetization fixed layer with the intermediate layer sandwiched therebetween, and is configured to have a variable magnetization direction. The outer circumferential portion has magnetization in an orientation perpendicular to a film surface, the center portion is formed by being surrounded by the outer circumferential portion and having magnetization inclined from the orientation perpendicular to the film surface.

公开(公告)号：US10861521B2

公开(公告)日：2020-12-08

申请号：US16091732

申请日：2017-03-09

Applicant: SONY CORPORATION

Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

IPC: H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22

Abstract: A magnetic storage element includes a first magnetic layer having a magnetization easy axis in a direction perpendicular to a surface of the first magnetic layer. A first non-magnetic layer is on the first magnetic layer. A second magnetic layer is on the first non-magnetic layer and has a fixed magnetization direction. A second non-magnetic layer is on the second magnetic layer. A third magnetic layer is on the second non-magnetic layer and has a fixed magnetization direction perpendicular to a surface of the third magnetic layer. A third non-magnetic layer is on the third magnetic layer. A storage layer on the third non-magnetic layer and having a variable magnetization direction with a magnetization easy axis in a direction perpendicular to a surface of the storage layer. Change in a magnetization direction of the first magnetic layer is easier than in the storage layer.

公开(公告)号：US10706903B2

公开(公告)日：2020-07-07

申请号：US16301063

申请日：2017-04-18

Applicant: SONY CORPORATION

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Hiroyuki Uchida

IPC: G11C11/16 ,  H01L29/82 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01F10/32

Abstract: A nonvolatile memory cell includes a layered structure body formed by layering a storage layer that stores information in accordance with a magnetization direction and a magnetization fixed layer that defines a magnetization direction of the storage layer; and a heating layer that heats the magnetization fixed layer to control a magnetization direction of the magnetization fixed layer.

公开(公告)号：US10672420B2

公开(公告)日：2020-06-02

申请号：US15553848

申请日：2016-01-18

Applicant: SONY CORPORATION

Inventor： Kazutaka Yamane ,  Hiroyuki Uchida ,  Yutaka Higo ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Masanori Hosomi

IPC: G11C11/15 ,  G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01F10/30 ,  G11C11/16 ,  H01L27/105 ,  H01L29/82 ,  H01F10/32

Abstract: The present technology relates to a storage device that realizes both a high information retention property and a low power consumption. A storage device includes a fixed layer, a storage layer, an intermediate layer, and a heat generation layer. The fixed layer includes a first ferromagnetic layer that includes a fixed perpendicular magnetization. The storage layer includes a second ferromagnetic layer that includes a perpendicular magnetization invertible by a spin injection. The intermediate layer is formed of an insulator and is arranged between the storage layer and the fixed layer. The heat generation layer is formed of a resistance heating element and is arranged in at least one of the storage layer and the fixed layer. With this configuration, it becomes possible to provide a storage device that realizes both a high information retention property and a low power consumption.

公开(公告)号：US20200052195A1

公开(公告)日：2020-02-13

申请号：US16654596

申请日：2019-10-16

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC: H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01F10/32 ,  B82Y25/00 ,  H01F41/32

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

公开(公告)号：US10128435B2

公开(公告)日：2018-11-13

申请号：US15047311

申请日：2016-02-18

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida ,  Tetsuya Asayama

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08

Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

公开(公告)号：US09997179B2

公开(公告)日：2018-06-12

申请号：US15141241

申请日：2016-04-28

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11B5/31 ,  G11B5/39 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01F10/32 ,  H01L43/02 ,  G11B5/127 ,  H01L23/528 ,  B82Y25/00 ,  H01L27/22 ,  H01F10/12

CPC classification number: G11B5/3146 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L23/528 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

公开(公告)号：US20170324026A1

公开(公告)日：2017-11-09

申请号：US15658862

申请日：2017-07-25

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L43/02 ,  H01L27/22 ,  H01F10/32 ,  G11B5/39 ,  G11C11/16 ,  G11C11/155 ,  G11C11/15 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/155 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.