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公开(公告)号：US11276729B2
公开(公告)日：2022-03-15
申请号：US16078759
申请日：2016-12-01
申请人： SONY CORPORATION
摘要： A magnetoresistive element includes: a first laminated structure body having a first surface and a second surface 20B facing the first surface; and a second laminated structure body formed by laminating a storage layer, an intermediate layer, and a magnetization fixed layer, the second laminated structure body having a first surface and a second surface facing the first surface, the first surface being positioned facing the second surface of the first laminated structure body. The first laminated structure body has a laminated structure including, from the first surface side of the first laminated structure body, a first layer made of a metal nitride and a second layer made of ruthenium or a ruthenium compound.
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公开(公告)号：US10854256B2
公开(公告)日：2020-12-01
申请号：US16777222
申请日：2020-01-30
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/16 , H01F10/32 , G11C11/155 , H01L43/08 , H01L27/22 , G11B5/39 , H01L43/02 , G11C11/15
摘要： A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
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公开(公告)号：US10566523B2
公开(公告)日：2020-02-18
申请号：US16150874
申请日：2018-10-03
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
摘要： A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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公开(公告)号：US20190267063A1
公开(公告)日：2019-08-29
申请号：US16408840
申请日：2019-05-10
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/16 , H01F10/32 , H01L43/08 , H01L43/02 , G11C11/15 , G11B5/39 , H01L27/22 , G11C11/155
摘要： A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
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公开(公告)号：US10375698B2
公开(公告)日：2019-08-06
申请号：US15650174
申请日：2017-07-14
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/00 , H04W72/04 , H01L43/08 , H01L27/22 , G11C11/16 , G11C5/08 , H01L43/10 , H04W72/08 , H04W72/12
摘要： A memory system is provided. The memory system includes a memory area configured to include a plurality of memory cells; a driving area configured to drive the memory cells; and a control area configured to supply a standby current to the memory area before the memory area records data; a plurality of word lines is crossing to a plurality of bit lines via the plurality of memory cells; and wherein each of the memory cells includes a memory layer, a magnetic fixed layer, an intermediate layer including a non-magnetic material provided between the memory layer and the magnetic fixed layer, a top electrode provided over the memory layer, a bottom electrode provided over the magnetic fixed layer.
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公开(公告)号：US10332577B2
公开(公告)日：2019-06-25
申请号：US15943361
申请日：2018-04-02
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L43/08 , G11C11/16 , H01L27/22 , G11B5/39 , H01F10/32 , H01L43/02 , G11C11/155 , G11C11/15
摘要： A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
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公开(公告)号：US20190036019A1
公开(公告)日：2019-01-31
申请号：US16150874
申请日：2018-10-03
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
摘要： A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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公开(公告)号：US10128436B2
公开(公告)日：2018-11-13
申请号：US15933512
申请日：2018-03-23
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
摘要： A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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公开(公告)号：US10121963B2
公开(公告)日：2018-11-06
申请号：US15667750
申请日：2017-08-03
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： H01L43/10 , G11C11/16 , H01F41/32 , H01F10/32 , B82Y25/00 , H01L43/08 , H01L43/02 , H01L27/22
摘要： A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.
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公开(公告)号：US20180240507A1
公开(公告)日：2018-08-23
申请号：US15943361
申请日：2018-04-02
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
CPC分类号： G11C11/161 , G11B5/3906 , G11B5/3909 , G11C11/15 , G11C11/155 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
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