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公开(公告)号:US20060236934A1
公开(公告)日:2006-10-26
申请号:US11473661
申请日:2006-06-22
申请人: Soo Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
发明人: Soo Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
CPC分类号: H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
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公开(公告)号:US20050251990A1
公开(公告)日:2005-11-17
申请号:US10889683
申请日:2004-07-12
申请人: Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
发明人: Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
IPC分类号: H01L21/02 , C23C16/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/505 , C23C16/509 , C23F1/00 , H01J37/32 , H01L21/205
CPC分类号: H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。
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公开(公告)号:US08083853B2
公开(公告)日:2011-12-27
申请号:US10889683
申请日:2004-07-12
申请人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号: C23C16/00 , C23C16/455 , H01L21/3065
CPC分类号: H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。
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公开(公告)号:US09200368B2
公开(公告)日:2015-12-01
申请号:US13207227
申请日:2011-08-10
申请人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号: C23C16/455 , C23C16/34 , C23C16/509 , H01J37/32
CPC分类号: H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。
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公开(公告)号:US20110290183A1
公开(公告)日:2011-12-01
申请号:US13207227
申请日:2011-08-10
申请人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号: C23C16/455
CPC分类号: H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。
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公开(公告)号:US09922854B2
公开(公告)日:2018-03-20
申请号:US13098253
申请日:2011-04-29
申请人: Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人: Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号: C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01J37/32 , H01L21/67 , H01L21/677
CPC分类号: H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要: The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
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公开(公告)号:US09382621B2
公开(公告)日:2016-07-05
申请号:US12700484
申请日:2010-02-04
申请人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号: C23C16/509 , C23C16/458 , H01J37/32 , H01L21/67
CPC分类号: C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译: 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频(RF)装置。 该方法包括相对于另一个电极移动一个电极,并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径,耦合到腔室的底部的RF器件和 电极或其组合。
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公开(公告)号:US08070408B2
公开(公告)日:2011-12-06
申请号:US12199341
申请日:2008-08-27
申请人: Mehran Behdjat , Shinichi Kurita , Makoto Inagawa , Suhail Anwar
发明人: Mehran Behdjat , Shinichi Kurita , Makoto Inagawa , Suhail Anwar
IPC分类号: H01L21/677
CPC分类号: H01L21/67201 , H01L21/67236
摘要: The present invention generally includes a load lock chamber for transferring large area substrates into a vacuum processing chamber. The load lock chamber may have one or more separate, environmentally isolated environments. Each processing environment may have a plurality exhaust ports for drawing a vacuum. The exhaust ports may be located at the corners of the processing environment. When a substrate is inserted into the load lock chamber from the factory interface, the environment may need to be evacuated. Due to the exhaust ports located at the corners of the environment, any particles or contaminants that may be present may be pulled to the closest corner and out of the load lock chamber without being pulled across the substrate. Thus, substrate contamination may be reduced.
摘要翻译: 本发明通常包括用于将大面积基板输送到真空处理室中的负载锁定室。 负载锁定室可以具有一个或多个单独的环境隔离环境。 每个处理环境可以具有用于抽真空的多个排气口。 排气口可以位于处理环境的拐角处。 当基板从出厂界面插入加载锁定室时,环境可能需要抽真空。 由于位于环境角落处的排气口,可能存在的任何颗粒或污染物可被拉到最靠近的角落并且不被拉过载体锁定室。 因此,可能降低衬底污染。
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公开(公告)号:US07665951B2
公开(公告)日:2010-02-23
申请号:US11421793
申请日:2006-06-02
申请人: Shinichi Kurita , Suhail Anwar , Jae-Chull Lee
发明人: Shinichi Kurita , Suhail Anwar , Jae-Chull Lee
IPC分类号: B65G49/07
CPC分类号: H01L21/67201 , C23C14/566 , H01L21/67109 , H01L21/67126 , H01L21/67167 , H01L21/67178 , H01L21/6719 , H01L21/67742 , H01L21/67751 , Y10S414/139
摘要: Embodiments of the invention include a load lock chamber, a processing system having a load lock chamber and a method for transferring substrates between atmospheric and vacuum environments. In one embodiment, the method includes maintaining a processed substrate within a transfer cavity formed in a chamber body for two venting cycles. In another embodiment, the method includes transferring a substrate from a transfer cavity to a heating cavity formed in the chamber body, and heating the substrate in the heating cavity. In another embodiment, a load lock chamber includes a chamber body having substrate support disposed in a transfer cavity. The substrate support is movable between a first elevation and a second elevation. A plurality of grooves are formed in at least one of a ceiling or floor of the transfer cavity and configured to receive at least a portion of the substrate support when located in the second elevation.
摘要翻译: 本发明的实施例包括负载锁定室,具有负载锁定室的处理系统和用于在大气和真空环境之间传送衬底的方法。 在一个实施例中,该方法包括将经处理的基板保持在形成在室主体中的传送空腔内用于两个排气循环。 在另一个实施例中,该方法包括将基底从传递腔转移到形成在腔体中的加热腔,以及加热加热腔中的基底。 在另一个实施例中,负载锁定室包括具有设置在传送腔中的衬底支撑件的室主体。 衬底支撑件可在第一高度和第二高度之间移动。 多个槽形成在传送腔的天花板或地板中的至少一个中,并且被配置为当位于第二高度时容纳衬底支撑件的至少一部分。
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公开(公告)号:US09758869B2
公开(公告)日:2017-09-12
申请号:US12779167
申请日:2010-05-13
申请人: Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L Tiner , John M White , Shinichi Kurita
发明人: Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L Tiner , John M White , Shinichi Kurita
IPC分类号: C23C16/00 , H01J37/00 , C23C16/455 , C23C16/44 , C23C16/509 , H01J37/32
CPC分类号: C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要: Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
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