公开(公告)号：US20050282380A1

公开(公告)日：2005-12-22

申请号：US10972191

申请日：2004-10-22

申请人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

发明人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

IPC分类号： B24B37/04 ,  B24B49/16 ,  H01L21/321 ,  H01L21/768 ,  H01L21/00 ,  B24B49/00 ,  B24B51/00 ,  H01L21/4763

CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

摘要翻译： 提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。 在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。 抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。 磨料的百分比。 抛光工艺可以集成到多步抛光工艺中。

公开(公告)号：US20060166487A1

公开(公告)日：2006-07-27

申请号：US11393999

申请日：2006-03-30

申请人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

发明人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

公开(公告)号：US07104869B2

公开(公告)日：2006-09-12

申请号：US10187857

申请日：2002-06-27

申请人： Stan Tsai ,  Rashid Mavliev ,  Lizhong Sun ,  Feng Q. Liu ,  Liang-Yuh Chen ,  Ratson Morad

发明人： Stan Tsai ,  Rashid Mavliev ,  Lizhong Sun ,  Feng Q. Liu ,  Liang-Yuh Chen ,  Ratson Morad

IPC分类号： B24B1/00 ,  H01L21/47

CPC分类号： B24B37/0056 ,  B24B37/044 ,  B24B49/006 ,  B24B49/16 ,  C09G1/02 ,  H01L21/3212

摘要： The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials.

公开(公告)号：US20050284770A1

公开(公告)日：2005-12-29

申请号：US11215254

申请日：2005-08-30

申请人： Paul Butterfield ,  Liang-Yuh Chen ,  Yonqi Hu ,  Antoine Manens ,  Rashid Mavliev ,  Stan Tsai ,  Feng Liu ,  Ralph Wadensweiler ,  Lizhong Sun ,  Siew Neo ,  Alain Duboust

发明人： Paul Butterfield ,  Liang-Yuh Chen ,  Yonqi Hu ,  Antoine Manens ,  Rashid Mavliev ,  Stan Tsai ,  Feng Liu ,  Ralph Wadensweiler ,  Lizhong Sun ,  Siew Neo ,  Alain Duboust

IPC分类号： B23H5/00 ,  B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/04 ,  B24B49/16 ,  B24B53/007 ,  B24D13/14 ,  C25D17/00 ,  C25D17/10 ,  H01L21/321

CPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/046 ,  B24B37/11 ,  B24B37/22 ,  B24B37/24 ,  B24B37/26 ,  B24B49/16 ,  B24B53/017 ,  C25D17/10 ,  H01L21/32125

摘要： Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes a ring-shaped upper layer having a polishing surface, and a conductive layer coupled to the upper layer and forming a replaceable assembly therewith.

摘要翻译： 提供了用于研磨衬底的抛光制品的实施例。 在一个实施例中，抛光制品包括具有抛光表面的环形上层，以及耦合到上层并与其形成可更换组件的导电层。

公开(公告)号：US20050000801A1

公开(公告)日：2005-01-06

申请号：US10880752

申请日：2004-06-30

申请人： Yan Wang ,  Siew Neo ,  Feng Liu ,  Stan Tsai ,  Yongqi Hu ,  Alain Duboust ,  Antoine Manens ,  Ralph Wadensweiler ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Donald Olgado ,  Paul Butterfield ,  Ming-Kuei Tseng ,  Shou-Sung Chang ,  Lizhong Sun

发明人： Yan Wang ,  Siew Neo ,  Feng Liu ,  Stan Tsai ,  Yongqi Hu ,  Alain Duboust ,  Antoine Manens ,  Ralph Wadensweiler ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Donald Olgado ,  Paul Butterfield ,  Ming-Kuei Tseng ,  Shou-Sung Chang ,  Lizhong Sun

IPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/04 ,  B24B49/16 ,  B24B53/007 ,  B24D13/14 ,  H01L21/321 ,  C25D17/00

CPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/046 ,  B24B37/16 ,  B24B49/16 ,  B24B53/017 ,  H01L21/32125

摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.

摘要翻译： 本发明的实施方案通常提供用于在电化学机械平面化系统中处理基底的方法和装置。 在一个实施例中，用于抛光衬底的单元包括设置在压板组件的顶表面上的处理衬垫。 多个导电元件跨过上平坦化表面以间隔的关系布置，并且适于相对于设置在垫和压板组件之间的电极偏压衬底。 多个通道通过压板组件形成在顶表面和限定在压板组件内的气室之间。 在另一个实施例中，提供了具有批处理单元和残余处理单元的系统。 残余处理单元包括偏置的导电平面化表面。 在另外的实施方案中，保护导电元件免受过程化学物质的侵蚀。

公开(公告)号：US20080026681A1

公开(公告)日：2008-01-31

申请号：US11868829

申请日：2007-10-08

申请人： PAUL BUTTERFIELD ,  Liang-Yuh Chen ,  Yonqi Hu ,  Antoine Manens ,  Rashid Mavliev ,  Stan Tsai ,  Feng Liu ,  Ralph Wadensweiler ,  Lizhong Sun ,  Siew Neo ,  Alain Duboust

发明人： PAUL BUTTERFIELD ,  Liang-Yuh Chen ,  Yonqi Hu ,  Antoine Manens ,  Rashid Mavliev ,  Stan Tsai ,  Feng Liu ,  Ralph Wadensweiler ,  Lizhong Sun ,  Siew Neo ,  Alain Duboust

IPC分类号： B24B29/00

CPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/046 ,  B24B37/11 ,  B24B37/22 ,  B24B37/24 ,  B24B37/26 ,  B24B49/16 ,  B24B53/017 ,  C25D17/10 ,  H01L21/32125

摘要： Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes an annular upper layer made of a dielectric material coupled to an annular lower layer made of a conductive material, and an annular subpad sandwiched between the annular upper layer and the annular lower layer forming a replaceable assembly therewith.

摘要翻译： 提供了用于研磨衬底的抛光制品的实施例。 在一个实施例中，抛光制品包括由与由导电材料制成的环形下层耦合的电介质材料制成的环形上层，以及夹在环形上层和环形下层之间的环形子垫，其与之形成可更换组件。

公开(公告)号：US20080045021A1

公开(公告)日：2008-02-21

申请号：US11923276

申请日：2007-10-24

申请人： Stan Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

发明人： Stan Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

IPC分类号： H01L21/461

CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

摘要翻译： 提供了通过化学机械抛光技术去除阻挡层材料的组合物和方法。 一方面，本发明提供一种组合物，其适于在化学机械抛光技术中除去阻挡层材料，该技术包括至少一种选自二羧酸，三羧酸及其组合的还原剂，至少一种还原剂，其选自 该组葡萄糖，羟胺及其组合以及去离子水，其中所述组合物具有约7或更低的pH。 组合物可以用于除去阻挡层材料的方法，包括将组合物施加到抛光垫上，并在组合物存在下抛光基底以除去阻挡层。

公开(公告)号：US07232363B2

公开(公告)日：2007-06-19

申请号：US10942600

申请日：2004-09-16

申请人： Hanzhong Zhang ,  Feng Liu ,  Stan Tsai ,  Rashid Mavliev ,  Donald Olgado ,  Liang-Yuh Chen

发明人： Hanzhong Zhang ,  Feng Liu ,  Stan Tsai ,  Rashid Mavliev ,  Donald Olgado ,  Liang-Yuh Chen

IPC分类号： B24B57/02 ,  B24B7/22

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.

摘要翻译： 对基板研磨装置和方法进行说明。 基座包括至少一个可移动的压板以接合抛光垫。 在抛光操作期间，至少一个承载头组件基本上在抛光区域内将衬底压靠在抛光垫上。 抛光溶液分配器在抛光操作期间基本上在抛光区域内将抛光溶液施加到抛光垫。 抛光溶液保持机构附接到基座或承载头组件中的一个。 保持机构接合抛光垫的顶表面，并且在抛光操作期间将抛光液基本保持在抛光区域内。 一些实施方案可以减少抛光溶液消耗并允许增加的角速度。

公开(公告)号：US20060124474A1

公开(公告)日：2006-06-15

申请号：US11343360

申请日：2006-01-31

申请人： Stan Tsai ,  Feng Liu ,  Yan Wang ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Alain Duboust

发明人： Stan Tsai ,  Feng Liu ,  Yan Wang ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Alain Duboust

IPC分类号： B23H3/00

CPC分类号： B24B37/046 ,  B24B37/26 ,  B24B49/10 ,  C25F7/00 ,  H01L21/32125

摘要： A method and apparatus for local polishing and deposition control in a process cell is generally provided. In one embodiment, an apparatus for electrochemically processing a substrate is provided that selectively polishes discrete conductive portions of a substrate by controlling an electrical bias profile across a processing area, thereby controlling processing rates between two or more conductive portions of the substrate.

摘要翻译： 通常提供用于处理室中的局部抛光和沉积控制的方法和装置。 在一个实施例中，提供了一种用于电化学处理衬底的设备，其通过控制跨越处理区域的电偏压分布来选择性地抛光衬底的离散导电部分，从而控制衬底的两个或更多导电部分之间的处理速率。

公开(公告)号：US20060019581A1

公开(公告)日：2006-01-26

申请号：US10942600

申请日：2004-09-16

申请人： Hanzhong Zhang ,  Feng Liu ,  Stan Tsai ,  Rashid Mavliev ,  Donald Olgado ,  Liang-Yuh Chen

发明人： Hanzhong Zhang ,  Feng Liu ,  Stan Tsai ,  Rashid Mavliev ,  Donald Olgado ,  Liang-Yuh Chen

IPC分类号： B24B1/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.

摘要翻译： 对基板研磨装置和方法进行说明。 基座包括至少一个可移动的压板以接合抛光垫。 在抛光操作期间，至少一个承载头组件基本上在抛光区域内将衬底压靠在抛光垫上。 抛光溶液分配器在抛光操作期间基本上在抛光区域内将抛光溶液施加到抛光垫。 抛光溶液保持机构附接到基座或承载头组件中的一个。 保持机构接合抛光垫的顶表面，并且在抛光操作期间将抛光液基本保持在抛光区域内。 一些实施方案可以减少抛光溶液消耗并允许增加的角速度。