摘要:
Compounds of formulae (I) or (II): wherein R is a substituted or unsubstituted alkyl, alkenyl, alkynyl, aryl, aralkyl aralkenyl, or aralkynyl group, that optionally includes at least one heteroatom in its carbon skeleton, and R?1 and R?2 are H, or an —OR?3 group in which R?3 is a substituted or unsubstituted alkyl, alkenyl, alkynyl, aryl, aralkyl aralkenyl, or aralkynyl group containing 4-12 carbon atoms, that optionally includes at least one heteroatom in its carbon skeleton, and R?1 and R?2 cannot both be H, and their use in therapeutic methods.
摘要:
A compound of formula (I) or (II): wherein A is hydrogen or CR1R2; Y and Z are each, independently, hydrogen or a halogen; X is —NR4R5, or R7; R1 is hydrogen, or a substituted or unsubstituted alkyl or alkenyl group containing 1-4 carbon atoms; when X is —NR4R5, R2 is a substituted or unsubstituted alkyl, alkenyl, alkynyl, aryl, aralkyl aralkenyl, or aralkynyl group, that optionally includes at least one heteroatom in its carbon skeleton and contains 1-12 carbon atoms; when X is R7, R2 is an unsubstituted alkyl, alkenyl or alkynyl group, or a substituted or unsubstituted aryl, aralkyl aralkenyl, or aralkynyl group, that optionally includes at least one heteroatom in its carbon skeleton and contains 1-12 carbon atoms; R3 is a substituted or unsubstituted alkyl, alkenyl, alkynyl, aryl, aralkyl aralkenyl, or aralkynyl group, that optionally includes at least one heteroatom in its carbon skeleton and contains 1-12 carbon atoms; R4 is hydrogen, a substituted or unsubstituted alkyl, alkenyl, alkynyl, aryl, aralkyl aralkenyl, or aralkynyl group, that optionally includes at least one heteroatom in its carbon skeleton and contains 1-12 carbon atoms, —COOR8, or —COR8; R5 is hydrogen, or a substituted or unsubstituted alkyl or alkenyl group containing 1-5 carbon atoms; R7 is an unsubstituted alkyl, alkenyl, or alkynyl group, that contains 1-4 carbon atoms; and, R8 is an unsubstituted or halo-substituted alkyl, aryl, or aralkyl group, that contains 1-12 carbon atoms.
摘要翻译:式(I)或(II)的化合物:其中A是氢或CR 1 R 2; Y和Z各自独立地为氢或卤素; X是-NR 4 R 5或R 7; R 1是氢或含有1-4个碳原子的取代或未取代的烷基或链烯基; 当X是-NR 4 R 5时,R 2是取代或未取代的烷基,烯基,炔基,芳基,芳烷基芳烯基或芳炔基 基团,其任选地在其碳骨架中包含至少一个杂原子并且含有1-12个碳原子; 当X是R 7时,R 2是未取代的烷基,烯基或炔基,或取代或未取代的芳基,芳烷基芳烯基或芳炔基,其任选地包括在 其碳骨架中至少有一个杂原子,含有1-12个碳原子; R 3是取代或未取代的烷基,烯基,炔基,芳基,芳烷基芳烯基或芳炔基,其任选地在其碳骨架中包含至少一个杂原子并含有1-12个碳原子; R 4是氢,取代或未取代的烷基,烯基,炔基,芳基,芳烷基芳烯基或芳炔基,其任选地在其碳骨架中包含至少一个杂原子并含有1-12个碳原子, -COOR 8或-COR 8; R 5是氢或含有1-5个碳原子的取代或未取代的烷基或链烯基; R 7是含有1-4个碳原子的未取代的烷基,烯基或炔基; R 8是含有1-12个碳原子的未取代或卤素取代的烷基,芳基或芳烷基。
摘要:
Compounds of formula (I) or (II), wherein R is a substituted or unsubstituted alkyl, alkenyl, alkynyl, aryl, aralkyl aralkenyl, or aralkynyl group, that optionally includes at least one heteroatom in its carbon skeleton, and R1 is a substituted or unsubstituted, branched or straight chain alkyl, alkenyl, or alkynyl group, that contains 1-12 carbon atoms, and there use in therapeutic methods.
摘要:
A compound comprising a cyclopentanone, cyclopentenone, cyclohexanone or cyclohexenone group, wherein a first ring carbon atom carries an —SR substituent, R is a substituted or unsubstituted alkyl, alkenyl, alkynyl, aryl, aralkyl, aralkenyl, or aralkynyl group that, optionally, includes at least one heteroatom in its carbon skeleton, the remaining available ring carbon atoms are optionally substituted, and said compound either:—(a) is more soluble in water at a temperature of 20-40° C.; (b) is less lipophilic; and/or, (c) has a greater therapeutic index; or; (d) is less soluble in water at a temperature of 20-40° C.; (e) is more lipophilic; and/or, (f) has a greater therapeutic index; than an equivalent cyclohex-2-en-1-one or cyclopent-2-en-1-one derivative in which a hydrogen atom replaces said —SR group.
摘要:
The present invention relates to novel derivatives of 18β-glycyrrhetinic acid and methods of synthesising the derivatives. Also included within the scope of the present invention are pharmaceutical compositions comprising the derivatives of the present invention and medical uses of the derivatives, including their use in inhibiting enzymes such as retinol dehydrogenases. The present invention also relates to methods of treating diseases, such as hyperproliferative diseases, neoplasms, cancers and photoageing.
摘要:
An improved method of fabricating a stable high dielectric constant and low leakage dielectric material which includes oxidizing at a temperature of about 600.degree. C. or higher a layer of a mixture of a transition metal nitride and silicon nitride to produce a mixture which includes an oxide of the transition metal and silicon nitride. The initial mixture of transition metal nitride and silicon nitride may be deposited by reactive sputtering techniques or other known deposition techniques on, a semiconductor or an electrically conductive layer, and the thickness of the mixture should be within the range of 3 to 50 nanometers. By depositing an electrically conductive layer on the oxidized mixture, a capacitor having a high dielectric, and low current leakage dielectric medium is provided.
摘要:
An improved VLSI and ULSI structure and a method of forming the same are provided. The structure starts with a base member having a plurality of supports formed thereon and extending upwardly therefrom. A selectively removable material is deposited on the base member and around the supports. An insulating cap is formed over the supports and the removable material. Access openings are provided through the cover (or base) and the removable material is removed through the access openings. Thereafter a partial vacuum is formed in the space evacuated by the removable material, and the access openings sealed to provide a dielectric medium around the supports and between the base and cap member having a dielectric constant of less than 2.0.
摘要:
An improved VLSI or ULSI structure and a method of forming the same are provided. The structure starts with a base member having a plurality of supports formed thereon and extending upwardly therefrom. A selectively removable material is deposited on the base member and around the supports. An insulating cap is formed over the supports and the removable material. Access openings are provided through the cover (or base) and the removable material is removed through the access openings. Thereafter a partial vacuum is formed in the space evacuated by the removable material, and the access openings sealed to provide a dielectric medium around the supports and between the base and cap member having a dielectric constant of less than 2.0.
摘要:
An improved method for making polycide structures for use in electrode and wiring interconnection applications. It includes depositing a layer of polysilicon on an insulating layer and forming on this polysilicon layer a silicide structure and a silicon capping layer. The deposited layers are defined and etched through dry etching techniques using a dry etching mask made of a refractory metal that does not form a volatile halide in a dry etching environment. Metals with such characteristics include cobalt (Co), nickel (Ni), iron (Fe), and manganese (Mn). The metal mask and the other deposited layers may be formed and defined using a photoresist mask as a deposition mask formed to be compatible with lift-off techniques.The silicide may be deposited either through a chemical vapor deposition process or through evaporation techniques. If it is formed through the co-evaporation of metal and silicon, then the structure is subjected to a low temperature reaction annealing step at a temperature between 500.degree. and 600.degree. C. prior to dry etching. To avoid a diffusion of the metal mask into the silicon layer, during this low temperature annealing, the process provides for the formation of a diffusion barrier layer between the metal mask and the silicon layer.Following the removal of the metal mask and the diffusion barrier layer, the structure is annealed at a temperature sufficient to cause the homogenization of the silicide layer.
摘要:
An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400.degree. C. or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.