摘要:
A console is provided, in particular a central console for a vehicle, having a rail pair for the essentially horizontally displaceable accommodation of inserts of the console between the rails of the rail pair in guides of the rails, as well as a storage space between the inserts and the floor of the vehicle. For such a console, it is provided that the rails are implemented as freestanding brackets, the brackets at least being mounted in the floor of the vehicle, an essentially horizontally situated section of the particular bracket, which is distal from the floor, having at least one guide. Such a console offers high flexibility in regard to the storage space usable in this area with structurally simple design and may be advantageously used both with and also without the inserts in this aspect.
摘要:
A console is provided, in particular a central console for a vehicle, having a rail pair for the essentially horizontally displaceable accommodation of inserts of the console between the rails of the rail pair in guides of the rails, as well as a storage space between the inserts and the floor of the vehicle. For such a console, it is provided that the rails are implemented as freestanding brackets, the brackets at least being mounted in the floor of the vehicle, an essentially horizontally situated section of the particular bracket, which is distal from the floor, having at least one guide. Such a console offers high flexibility in regard to the storage space usable in this area with structurally simple design and may be advantageously used both with and also without the inserts in this aspect.
摘要:
A mounting of a container in a rail pair is provided, which is disposed in a passenger compartment of a motor vehicle, and the rails of the rail pair have substantially horizontally extending guide grooves on the mutually facing sides and a projection is mounted in the container on its side facing the respective rail, and the respective guide groove has a cross section which expands from the groove base and the respective projection has a corresponding cross section which is expanded toward the container.
摘要:
A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.
摘要:
Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.
摘要:
A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.
摘要:
An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.
摘要:
By aligning the primary flat of a wafer with a (100) plane rather than a (110) plane, devices can be formed with primary currents flowing along the (100) plane. In this case, the device will intersect the (111) plane at approximately 54.7 degrees. This intersect angle significantly reduces stress propagation/relief along the (111) direction and consequently reduces defects as well as leakage and parasitic currents. The leakage current reduction is a direct consequence of the change in the dislocation length required to short the source-drain junction. By using this technique the leakage current is reduced by up to two orders of magnitude for an N-channel CMOS device.
摘要:
Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.
摘要:
A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.