摘要:
A lithographic apparatus includes an illumination system configured to provide a radiation beam; a patterning device configured to pattern the radiation beam to form a patterned radiation beam; and a projection system configured to project the patterned radiation beam onto a substrate. An optical assembly includes multiple optical elements two-dimensionally arranged between a radiation source and the patterning device to create a predetermined angular distribution of the radiation beam. In order to improve the uniformity of the radiation beam the optical elements are selected from a predetermined number of optical elements having different shapes and/or sizes.
摘要:
The present invention provides a lithographic apparatus comprising an illumination system for providing a projection beam of radiation. The illumination system comprises at least one movable optical element (7), such that a projection beam of radiation (4) can be shifted around a central position. This ensures that inhomogeneities in the intensity distribution in the projection beam (4) will be smeared out, which in turn provides an improved homogeneity of the exposure of a surface to be illuminated by the system, such as a wafer or other substrate. The optical element (7) may comprise a motor movable mirror, prism, filter, lens, axicon, diffuser, diffractive optical array, optical integrator, etc. The invention further provides a device manufacturing method, using a lithographic apparatus according to the invention, wherein the optical element is moved, in order to provide an optimum homogeneity for the projection beam of radiation.
摘要:
A lithographic apparatus includes an illumination system for providing a beam of extreme ultra-violet radiation, a masking device for controlling the illumination of a patterning device by the beam of radiation, a support for supporting the patterning device, the patterning device configured to impart a pattern to the beam of radiation, a substrate table for holding a substrate, and a projection system for projecting the patterned beam of radiation onto a target portion of the substrate. The masking device includes a masking blade including a masking edge configured to delimit a boundary of an illumination region on the patterning device. The masking blade is configured to reflect extreme ultra-violet radiation incident on the masking blade such that at least a portion of the reflected radiation is not captured by the projection system.
摘要:
A device manufacturing method, is presented herein. In one embodiment, the device manufacturing method includes a mask for use with DUV having a quartz substrate and chrome absorber. The chrome absorber has a thickness of about 700 nm which causes increased TE polarization in the transmitted light and improves contrast at the substrate level.
摘要:
A lithographic apparatus includes an illumination system including a field faceted mirror including a plurality of field facets and configured to receive radiation from a radiation source and form a plurality of images of the radiation source on corresponding pupil facets of a pupil faceted mirror. Each of the field facets is configured to provide an illumination slit at a level of a patterning device. The illumination slits are summed together at the level of the patterning device to illuminate the patterning device. First blades are configured to block radiation from a radiation source and each first blade is selectively actuable to cover a portion of a selectable number of field facets. The field faceted mirror further comprises partial field facets, the partial field facets being configured to produce a partial illumination slit at the level of the patterning device, and the pupil faceted mirror further includes pupil facets corresponding to the partial field facets. The partial field facets are configured to produce an illumination slit that is summed with the summed illumination slits of the field facets and/or correct for non-uniformity in the summed illumination slits of the field facets. Second blades are selectively actuable to cover a portion of a selectable number of partial field facets.
摘要:
A lithographic apparatus includes an illumination system for providing a beam of extreme ultra-violet radiation, a masking device for controlling the illumination of a patterning device by the beam of radiation, a support for supporting the patterning device, the patterning device configured to impart a pattern to the beam of radiation, a substrate table for holding a substrate, and a projection system for projecting the patterned beam of radiation onto a target portion of the substrate. The masking device includes a masking blade including a masking edge configured to delimit a boundary of an illumination region on the patterning device. The masking blade is configured to reflect extreme ultra-violet radiation incident on the masking blade such that at least a portion of the reflected radiation is not captured by the projection system.
摘要:
A radiation system includes a radiation generator to generate radiation, a source, and an illumination system configured to receive the radiation and provide a beam of radiation. The illumination system includes a beam measuring system configured measure at least one of position and tilt of the beam of radiation relative to the illumination system and a projecting device configured to redirect only a part of a cross section of the beam of radiation to the beam measuring system. The beam measuring system may include several position sensors, the readouts of which can be used to determine incorrect alignment of the radiation source with respect to the illumination system. Diaphragms are connected to the collector of the radiation generator, so that in addition to X, Y, and Z corrections, Rx, Ry and Rz corrections are possible.
摘要:
A reflective mask has a sub-resolution texture applied to absorbing areas to reduce the amount of power in the specular reflection. The texture may form a phase contrast grating or may be a diffuser. The same technique may be applied to the other absorbers in a lithographic apparatus.
摘要:
An immersion lithographic projection apparatus is disclosed in which liquid is provided between a projection system of the apparatus and a substrate. The use of both liquidphobic and liquidphilic layers on various elements of the apparatus is provided to help prevent formation of bubbles in the liquid and to help reduce residue on the elements after being in contact with the liquid.
摘要:
A lithographic apparatus and device manufacturing method makes use of a liquid confined in a reservoir between the projection system and the substrate. Bubbles forming in the liquid from dissolved atmospheric gases or from out-gassing from apparatus elements exposed to the liquid are detected and/or removed so that they do not interfere with exposure and lead to printing defects on the substrate. Detection may be carried out by measuring the frequency dependence of ultrasonic attenuation in the liquid and bubble removal may be implemented by degassing and pressurizing the liquid, isolating the liquid from the atmosphere, using liquids of low surface tension, providing a continuous flow of liquid through the imaging field, and/or phase shifting ultrasonic standing-wave node patterns.