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1.发明申请Method for reducing an overlay error and measurement mark for carrying out the same 有权减少覆盖误差的方法和用于执行覆盖误差的测量标记公开(公告)号：US20050069790A1
公开(公告)日：2005-03-31
申请号：US10952885
申请日：2004-09-30
申请人： Stefan Gruss , Detlef Hofmann , Rainer Pforr , Mario Hennig , Guido Thielscher , Hans-Georg Froehlich
发明人： Stefan Gruss , Detlef Hofmann , Rainer Pforr , Mario Hennig , Guido Thielscher , Hans-Georg Froehlich
IPC分类号： G03F7/20 , G03F9/00 , H01L23/544 , G03C5/00
CPC分类号： G03F9/7084 , G03F7/70633 , G03F9/7076 , H01L23/544 , H01L2223/5442 , H01L2223/54453 , H01L2223/54466 , H01L2924/0002 , Y10S430/143 , H01L2924/00
摘要： A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.
摘要翻译： 用于减少要被图案化的层的结构相对于参考层的结构的覆盖误差的方法包括形成在两层中彼此分配的标准测量标记，以确定重叠误差并设置用于确定的另外的测量标记 至少在当前层中投影系统的附加光学成像误差。 另外的测量标记具有适于通过从掩模投影到半导体衬底上将要传送的电路图案的选定结构的几何形状的几何形状。 成像误差以同样的方式影响电路结构和进一步的测量标记。 可以从测量的两个标准测量标记之间的位置偏差和标准测量标记与当前要构图的层的另一测量标记之间的测量位置偏差来计算后续曝光的对准校正。
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2.发明授权Method for reducing an overlay error and measurement mark for carrying out the same 有权减少覆盖误差的方法和用于执行覆盖误差的测量标记公开(公告)号：US07425396B2
公开(公告)日：2008-09-16
申请号：US10952885
申请日：2004-09-30
申请人： Stefan Gruss , Detlef Hofmann , Rainer Pforr , Mario Hennig , Guido Thielscher , Hans-Georg Froehlich
发明人： Stefan Gruss , Detlef Hofmann , Rainer Pforr , Mario Hennig , Guido Thielscher , Hans-Georg Froehlich
CPC分类号： G03F9/7084 , G03F7/70633 , G03F9/7076 , H01L23/544 , H01L2223/5442 , H01L2223/54453 , H01L2223/54466 , H01L2924/0002 , Y10S430/143 , H01L2924/00
摘要： A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.
摘要翻译： 用于减少要被图案化的层的结构相对于参考层的结构的覆盖误差的方法包括形成在两层中彼此分配的标准测量标记，以确定重叠误差并设置用于确定的另外的测量标记 至少在当前层中投影系统的附加光学成像误差。 另外的测量标记具有适于通过从掩模投影到半导体衬底上将要传送的电路图案的选定结构的几何形状的几何形状。 成像误差以同样的方式影响电路结构和进一步的测量标记。 可以从测量的两个标准测量标记之间的位置偏差和标准测量标记与当前要构图的层的另一测量标记之间的测量位置偏差来计算后续曝光的对准校正。
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3.发明申请Method for detecting positioning errors of circuit patterns during the transfer by means of a mask into layers of a substrate of a semiconductor wafer 失效用于在通过掩模转移到半导体晶片的衬底的层中的情况下检测电路图案的定位误差的方法公开(公告)号：US20050068515A1
公开(公告)日：2005-03-31
申请号：US10951661
申请日：2004-09-29
CPC分类号： G03B27/32 , G03F7/70633
摘要： The invention relates to a method for detecting the positioning errors of circuit patterns during the transfer by a mask into layers of a substrate of a semiconductor wafer. After the transfer of at least one multiple arrangement of a first test structure by means of photolithographic projection into at least one resist layer above the substrate, the first test structure having a first circuit pattern, at least one first overlay mark and at least one first micropatterned alignment mark, the values of a first positioning error of the first circuit patterns relative to the first overlay marks and the first micropatterned alignment marks are determined for each element of the at least one multiple arrangement.
摘要翻译： 本发明涉及一种用于在通过掩模转移到半导体晶片的衬底的层中时检测电路图案的定位误差的方法。 在通过光刻投影将至少一个第一测试结构的多个布置转移到衬底上方的至少一个抗蚀剂层中之后，第一测试结构具有第一电路图案，至少一个第一重叠标记和至少一个第一重叠标记 针对所述至少一个多重布置的每个元件确定所述第一电路图案相对于所述第一覆盖标记和所述第一微图案化对准标记的第一定位误差的值。
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4.发明授权Method for detecting positioning errors of circuit patterns during the transfer by means of a mask into layers of a substrate of a semiconductor wafer 失效用于在通过掩模转移到半导体晶片的衬底的层中的情况下检测电路图案的定位误差的方法公开(公告)号：US07084962B2
公开(公告)日：2006-08-01
申请号：US10951661
申请日：2004-09-29
CPC分类号： G03B27/32 , G03F7/70633
摘要： A method, suitable to photolithographie projection, for detecting the positioning errors of circuit patterns during the transfer by a mask into layers of a substrate of a semiconductor wafer. After the transfer of at least one multiple arrangement of a first test structure into at least one resist layer above the substrate, wherein the first test structure includes a first circuit pattern, at least one first overlay mark and at least one first micropatterned alignment mark, the values of a first positioning error of the first circuit patterns relative to the first overlay marks and the first micropatterned alignment marks are determined for each element of the at least one multiple arrangement.
摘要翻译： 一种适用于光刻投影的方法，用于检测在通过掩模转移到半导体晶片的衬底的层中的电路图案的定位误差。 在将第一测试结构的至少一个多重布置转移到衬底上方的至少一个抗蚀剂层中之后，其中第一测试结构包括第一电路图案，至少一个第一覆盖标记和至少一个第一微图案化对准标记， 针对至少一个多重布置的每个元件确定第一电路图案相对于第一覆盖标记和第一微图案化对准标记的第一定位误差的值。
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5.发明申请Method for correcting structure-size-dependent positioning errors in photolithography 有权用于校正光刻中结构尺寸依赖性定位误差的方法公开(公告)号：US20060023198A1
公开(公告)日：2006-02-02
申请号：US11190056
申请日：2005-07-27
IPC分类号： G03B27/32
CPC分类号： G03F7/705 , G03F7/70425 , G03F7/70616 , G03F7/70633
摘要： A method for correcting structure-size-dependent positioning errors during the photolithographic projection by an exposure apparatus and the use thereof includes providing an exposure apparatus for exposing a plurality of exposure fields and a simulation model of the exposure apparatus for specifying correction values for intra-field errors, providing a first pattern with first structure elements and first measurement marks, which, in the case of a projection, are beset by a first positioning error and a second positioning error dependent on the dimensions and the position in the exposure field, providing a correction function suitable for specifying the first and the second positioning error, determining an average relative positioning error including the first and the second positioning error, calculating correction values for the control of the exposure apparatus, and transmitting the correction values to the exposure apparatus so that subsequent exposures are performed with an improved overlay.
摘要翻译： 一种用于通过曝光装置在光刻投影期间校正结构尺寸依赖性定位误差的方法及其用途包括提供用于曝光多个曝光场的曝光装置和用于指定校正值的曝光装置的模拟模型， 提供具有第一结构元件和第一测量标记的第一图案，其在投影的情况下被第一定位误差所困扰，并且第二定位误差取决于曝光区域中的尺寸和位置，提供 适于指定第一和第二定位误差的校正功能，确定包括第一和第二定位误差的平均相对定位误差，计算用于控制曝光装置的校正值，并将校正值发送到曝光装置 随后的曝光是用曝光进行的 被覆盖。
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6.发明授权Method for correcting structure-size-dependent positioning errors in photolithography 有权用于校正光刻中结构尺寸依赖性定位误差的方法公开(公告)号：US07251016B2
公开(公告)日：2007-07-31
申请号：US11190056
申请日：2005-07-27
IPC分类号： G03B27/68
CPC分类号： G03F7/705 , G03F7/70425 , G03F7/70616 , G03F7/70633
摘要： A method for correcting structure-size-dependent positioning errors during the photolithographic projection by an exposure apparatus and the use thereof includes providing an exposure apparatus for exposing a plurality of exposure fields and a simulation model of the exposure apparatus for specifying correction values for intra-field errors, providing a first pattern with first structure elements and first measurement marks, which, in the case of a projection, are beset by a first positioning error and a second positioning error dependent on the dimensions and the position in the exposure field, providing a correction function suitable for specifying the first and the second positioning error, determining an average relative positioning error including the first and the second positioning error, calculating correction values for the control of the exposure apparatus, and transmitting the correction values to the exposure apparatus so that subsequent exposures are performed with an improved overlay.
摘要翻译： 一种用于通过曝光装置在光刻投影期间校正结构尺寸依赖性定位误差的方法及其用途包括提供用于曝光多个曝光场的曝光装置和用于指定校正值的曝光装置的模拟模型， 提供具有第一结构元件和第一测量标记的第一图案，其在投影的情况下被第一定位误差所困扰，并且第二定位误差取决于曝光区域中的尺寸和位置，提供 适于指定第一和第二定位误差的校正功能，确定包括第一和第二定位误差的平均相对定位误差，计算用于控制曝光装置的校正值，并将校正值发送到曝光装置 随后的曝光是用曝光进行的 被覆盖。
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