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    Semiconductor recessed mask interconnect technology
    1.
    发明授权
    Semiconductor recessed mask interconnect technology 失效
    半导体凹陷掩模互连技术

    公开(公告)号：US06657305B1

    公开(公告)日：2003-12-02

    申请号：US09703734

    申请日：2000-11-01

    申请人： Stephen Alan Cohen ,  Timothy Joseph Dalton ,  John Anthony Fitzsimmons ,  Stephen McConnell Gates ,  Brian Wayne Herbst ,  Sampath Purushothaman ,  Stanley Joseph Whitehair

    发明人： Stephen Alan Cohen ,  Timothy Joseph Dalton ,  John Anthony Fitzsimmons ,  Stephen McConnell Gates ,  Brian Wayne Herbst ,  Sampath Purushothaman ,  Stanley Joseph Whitehair

    IPC分类号： H01L2348

    CPC分类号： H01L21/76829 ,  H01L21/76804 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metal plus low dielectric constant (low-k) interconnect structure is provided for a semiconductor device wherein adjacent regions in a surface separated by a dielectric have dimensions in width and spacing in the sub 250 nanometer range, and in which reduced lateral leakage current between adjacent metal lines, and a lower effective dielectric constant than a conventional structure, is achieved by the positioning of a differentiating or mask member that is applied for the protection of the dielectric in subsequent processing operations, at a position about 2-5 nanometers below a, to be planarized, surface where there will be a lower electric field. The invention is particularly useful in the damascene type device structure in the art wherein adjacent conductors extend from a substrate through an interlevel dielectric material, connections are made in a trench, a diffusion barrier liner is provided in the interlevel dielectric material and masking is employed to protect the dielectric material between conductors during processing operations.

    摘要翻译： 为半导体器件提供金属加上低介电常数（低k）互连结构，其中由电介质隔开的表面中的相邻区域在亚250纳米范围内具有宽度和间距的尺寸，并且其中减小横向漏电流 相邻的金属线和比常规结构更低的有效介电常数是通过在后续处理操作中在约2-5纳米以下的位置处定位用于保护电介质的微分或掩模构件来实现的 ，要平坦化，会有较低电场的表面。 本发明特别适用于本领域的镶嵌型器件结构，其中相邻导体从衬底延伸通过层间电介质材料，在沟槽中形成连接，在层间电介质材料中提供扩散阻挡衬垫，并且使用掩模 在处理操作期间保护导体之间的电介质材料。

    Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material
    3.
    发明授权
    Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material 有权
    形成包含气隙的多层互连结构的方法，包括利用牺牲和占位材料

    公开(公告)号：US06413852B1

    公开(公告)日：2002-07-02

    申请号：US09652754

    申请日：2000-08-31

    申请人： Alfred Grill ,  Jeffrey Curtis Hedrick ,  Christopher Vincent Jahnes ,  Satyanarayana Venkata Nitta ,  Kevin S. Petrarca ,  Sampath Purushothaman ,  Katherine Lynn Saenger ,  Stanley Joseph Whitehair

    发明人： Alfred Grill ,  Jeffrey Curtis Hedrick ,  Christopher Vincent Jahnes ,  Satyanarayana Venkata Nitta ,  Kevin S. Petrarca ,  Sampath Purushothaman ,  Katherine Lynn Saenger ,  Stanley Joseph Whitehair

    IPC分类号： H01L218234

    CPC分类号： H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76885

    摘要： A method for forming a multilayer interconnect structure on a substrate that include interconnected conductive wiring and vias spaced apart by a combination of solid or gaseous dielectrics. The inventive method includes the steps of: (a) forming a first planar via plus line level pair embedded in a dielectric matrix formed from one or more solid dielectrics and comprising a via level dielectric and a line level dielectric on a substrate, wherein, at least one of said solid dielectrics is at least partially sacrificial; (b) etching back sacrificial portions of said at least partially sacrificial dielectrics are removed to leave cavities extending into and through said via level, while leaving, at least some of the original via level dielectric as a permanent dielectric under said lines; (c) partially filling or overfilling said cavities with a place-holder material which may or may not be sacrificial; (d) planarizing the structure by removing overfill of said place-holder material; (e) repeating, as necessary, steps (a)-(d); (f) forming a dielectric bridge layer over the planar structure; and (g) forming air gaps by at least partially extracting said place-holder material.

    摘要翻译： 一种在衬底上形成多层互连结构的方法，其包括互连的导电布线和通过固体或气体电介质的组合间隔开的通孔。 本发明的方法包括以下步骤：（a）形成嵌入在由一个或多个固体电介质形成的电介质矩阵中并且包括通孔层电介质和衬底上的线路电介质的介电矩阵中的第一平面通孔加线电平对，其中，在 至少一个所述固体电介质至少部分地是牺牲的; （b）蚀刻所述至少部分牺牲电介质的牺牲部分被去除以留下延伸进入并穿过所述通孔级的空腔，同时留下至少一些原始通孔级电介质作为所述线下的永久电介质; （c）用可能牺牲或可能不是牺牲的位置保持材料部分填充或过度填充所述空腔; （d）通过去除所述位置保持器材料的过量填充来平坦化结构; （e）必要时重复步骤（a） - （d）; （f）在所述平面结构上形成电介质桥接层; 和（g）通过至少部分地提取所述放置支架材料形成气隙。

    Multilevel interconnect structure containing air gaps and method for making
    4.
    发明授权
    Multilevel interconnect structure containing air gaps and method for making 有权
    包含气隙的多层互连结构和制造方法

    公开(公告)号：US06737725B2

    公开(公告)日：2004-05-18

    申请号：US10144574

    申请日：2002-05-13

    申请人： Alfred Grill ,  Jeffrey Curtis Hedrick ,  Christopher Vincent Jahnes ,  Satyanarayana Venkata Nitta ,  Kevin S. Petrarca ,  Sampath Purushothaman ,  Katherine Lynn Saenger ,  Stanley Joseph Whitehair

    发明人： Alfred Grill ,  Jeffrey Curtis Hedrick ,  Christopher Vincent Jahnes ,  Satyanarayana Venkata Nitta ,  Kevin S. Petrarca ,  Sampath Purushothaman ,  Katherine Lynn Saenger ,  Stanley Joseph Whitehair

    IPC分类号： H01L2900

    CPC分类号： H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76885

    摘要： A method for forming a multilayer interconnect structure on a substrate that include interconnected conductive wiring and vias spaced apart by a combination of solid or gaseous dielectrics. The inventive method includes the steps of: (a) forming a first planar via plus line level pair embedded in a dielectric matrix formed from one or more solid dielectrics and comprising a via level dielectric and a line level dielectric on a substrate, wherein, at least one of said solid dielectrics is at least partially sacrificial; (b) etching back sacrificial portions of said at least partially sacrificial dielectrics are removed to leave cavities extending into and through said via level, while leaving, at least some of the original via level dielectric as a permanent dielectric under said lines; (c) partially filling or overfilling said cavities with a place-holder material which may or may not be sacrificial; (d) planarizing the structure by removing overfill of said place-holder material; (e) repeating, as necessary, steps (a)-(d); (f) forming a dielectric bridge layer over the planar structure; and (g) forming air gaps by at least partially extracting said place-holder material.

    摘要翻译： 一种在衬底上形成多层互连结构的方法，其包括互连的导电布线和通过固体或气体电介质的组合间隔开的通孔。 本发明的方法包括以下步骤：（a）形成嵌入在由一个或多个固体电介质形成的电介质矩阵中并且包括通孔层电介质和衬底上的线路电介质的介电矩阵中的第一平面通孔加线电平对，其中，在 至少一个所述固体电介质至少部分地是牺牲的; （b）蚀刻所述至少部分牺牲电介质的牺牲部分被去除以留下延伸进入并穿过所述通孔级的空腔，同时留下至少一些原始通孔级电介质作为所述线下的永久电介质; （c）用可能牺牲或可能不是牺牲的位置保持材料部分填充或过度填充所述空腔; （d）通过去除所述位置保持器材料的过量填充来平坦化结构; （e）必要时重复步骤（a） - （d）; （f）在所述平面结构上形成电介质桥接层; 和（g）通过至少部分地提取所述放置支架材料形成气隙。

    Enhanced uniformity in a length independent microwave applicator
    7.
    发明授权
    Enhanced uniformity in a length independent microwave applicator 失效
    在长度独立的微波施加器中增强均匀性

    公开(公告)号：US6072167A

    公开(公告)日：2000-06-06

    申请号：US2849

    申请日：1998-01-05

    申请人： David Andrew Lewis ,  Stanley Joseph Whitehair

    发明人： David Andrew Lewis ,  Stanley Joseph Whitehair

    IPC分类号： B01J19/12 ,  G01N22/00 ,  H05B6/60 ,  H05B6/62 ,  H05B6/68 ,  H05B6/70 ,  H05B6/74 ,  H05B6/78 ,  H05B6/80

    CPC分类号： H05B6/6402 ,  B01J19/126 ,  G01N22/00 ,  H05B6/70 ,  H05B6/705 ,  H05B6/788 ,  B01J2219/00191

    摘要： A microwave applicator including a cylindrical elongated chamber used to process materials therein; a microwave power source capable of producing microwave power having an electric field; a waveguide connected to the chamber couples microwave power into the microwave chamber. The applicator provides microwave energy having a substantially uniform field distribution over a large area for processing materials such as a web or sheet-like product. The uniformity of the applicator is enhanced by the use of matching devices within the applicator to match the regions of the applicator with no load to regions where the load is present in a continuous manner.

    摘要翻译： 一种微波施加器，包括用于在其中处理材料的圆柱形细长室; 能够产生具有电场的微波功率的微波电源; 连接到室的波导将微波功率耦合到微波室中。 施加器提供在大面积上具有基本均匀的场分布的微波能量，用于处理诸如幅材或片状产品的材料。 施加器的均匀性通过使用施加器内的匹配装置来增强，使得施加器的无负载区域以连续的方式存在负载的区域。

    Transparent hard coats for optical elements
    8.
    发明授权
    Transparent hard coats for optical elements 失效
    用于光学元件的透明硬涂层

    公开(公告)号：US07695776B2

    公开(公告)日：2010-04-13

    申请号：US12154568

    申请日：2008-05-23

    申请人： Jeffrey Curtis Hedrick ,  David Andrew Lewis ,  Stanley Joseph Whitehair

    发明人： Jeffrey Curtis Hedrick ,  David Andrew Lewis ,  Stanley Joseph Whitehair

    IPC分类号： H05H1/24

    CPC分类号： C23C16/308 ,  Y10S428/911 ,  Y10T428/24975 ,  Y10T428/24983 ,  Y10T428/265

    摘要： The present invention related to an improved structure of an optically transparent element that can be used in optical scanners, supermarket scanners, lenses for eyeglasses, etc. The application of oxynitride PECVD films provide good hardness and optical transparency. Such films displaying these physical properties are extremely useful as a scratch resistant coatings in lenses and systems in which an article contacts a transparent surface, such as in scanners and in environments in which intermittent, environmental contact occurs such as in displays for computers and suchlike and in liquid crystal displays, touch displays and compact disks.

    摘要翻译： 本发明涉及可用于光学扫描仪，超市扫描仪，眼镜镜片等的光学透明元件的改进结构。氮氧化物PECVD膜的应用提供了良好的硬度和光学透明度。 显示这些物理性质的这样的薄膜作为防透光涂料在透镜和系统中是非常有用的，所述透镜和系统中的物品接触透明表面，例如在扫描仪中以及在诸如计算机等的显示器中发生间歇性环境接触的环境中， 在液晶显示器，触摸显示器和光盘中。

    Radiation control system
    10.
    发明授权
    Radiation control system 失效
    辐射控制系统

    公开(公告)号：US6150645A

    公开(公告)日：2000-11-21

    申请号：US129505

    申请日：1998-08-05

    申请人： David Andrew Lewis ,  Stanley Joseph Whitehair

    发明人： David Andrew Lewis ,  Stanley Joseph Whitehair

    IPC分类号： B01J19/12 ,  G01N22/00 ,  H05B6/68 ,  H05B6/74 ,  H05B6/66

    CPC分类号： H05B6/74 ,  B01J19/126 ,  G01N22/00 ,  H05B6/68 ,  H05B6/705 ,  B01J2219/00058 ,  B01J2219/00191 ,  B01J2219/0879 ,  B01J2219/1275 ,  Y02B40/143

    摘要： A control system for a blind microwave radiation tool a workpiece is described. The controlled system automatically tunes the cavity containing the workpiece. The control system automatically controls the temperature of the workpiece according to a predetermined temperature versus time schedule. Control system automatically determines when the workpiece has reached a particular predetermined physical condition. To achieve these results the control system automatically monitors applied power, reflected power or current temperature and automatically controls the microwave cavity volume and shape and launch structure including antennae location, cavity short location, cavity diameter, coupling loop position, etc. in order to maintain the cavity in resonance and to determine when to exit without operator intervention. Control system can run on a small computer or an embedded controller and is useful for automatically curing polyamic acid to polyimide to a predetermined percent cure, processing preimpregnated glass cloth in a continuous manner which can be used in circuit boards and drying and partial curing of web-like materials automatically without operator intervention.

    摘要翻译： 描述了用于盲微波辐射工具的工件的控制系统。 受控系统自动调谐包含工件的腔体。 控制系统根据预定的温度对时间表自动控制工件的温度。 控制系统自动确定工件何时达到特定的预定物理状态。 为了实现这些结果，控制系统自动监测所施加的功率，反射功率或当前温度，并自动控制微波腔的体积和形状以及发射结构，包括天线位置，腔体短距离，腔体直径，耦合回路位置等，以便保持 腔内共振并确定何时退出而无需操作员干预。 控制系统可以在小型计算机或嵌入式控制器上运行，可用于将聚酰胺酸与聚酰亚胺自动固化至预定百分比固化，以连续方式处理预浸玻璃布，可用于电路板和干燥和部分固化网 自动地进行操作员干预。