Memory cell without halo implant
    1.
    发明授权
    Memory cell without halo implant 有权
    无光晕植入的记忆细胞

    公开(公告)号:US07355246B2

    公开(公告)日:2008-04-08

    申请号:US11268430

    申请日:2005-11-07

    IPC分类号: H01L29/76

    摘要: Some embodiments provide a memory cell comprising a body region doped with charge carriers of a first type, a source region disposed in the body region and doped with charge carriers of a second type, and a drain region disposed in the body region and doped with charge carriers of the second type. According to some embodiments, the body region, the source region, and the drain region are oriented in a first direction, the body region and the source region form a first junction, and the body region and the drain region form a second junction. Moreover, a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased. Some embodiments further include a transistor oriented in a second direction, wherein the second direction is not parallel to the first direction.

    摘要翻译: 一些实施例提供一种存储单元,其包括掺杂有第一类型的电荷载体的体区,设置在体区中的源极区,并掺杂有第二类型的电荷载流子,以及设置在体区中的掺杂电荷 第二种载体。 根据一些实施例,身体区域,源区域和漏极区域在第一方向上定向,身体区域和源区域形成第一结,并且体区域和漏区域形成第二结。 此外,在第一结无偏置的情况下,从体区到源极区的第一结的导电率基本上小于从体区到漏区的第二结的导电率,在第二结 是不偏不倚的 一些实施例还包括在第二方向上取向的晶体管,其中第二方向不平行于第一方向。

    Method for making memory cell without halo implant
    5.
    发明授权
    Method for making memory cell without halo implant 失效
    制造无光晕植入记忆细胞的方法

    公开(公告)号:US07001811B2

    公开(公告)日:2006-02-21

    申请号:US10750566

    申请日:2003-12-31

    IPC分类号: H01L21/336

    摘要: Some embodiments provide a memory cell comprising a body region doped with charge carriers of a first type, a source region disposed in the body region and doped with charge carriers of a second type, and a drain region disposed in the body region and doped with charge carriers of the second type. According to some embodiments, the body region, the source region, and the drain region are oriented in a first direction, the body region and the source region form a first junction, and the body region and the drain region form a second junction. Moreover, a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased. Some embodiments further include a transistor oriented in a second direction, wherein the second direction is not parallel to the first direction.

    摘要翻译: 一些实施例提供一种存储单元,其包括掺杂有第一类型的电荷载体的体区,设置在体区中的源极区,并掺杂有第二类型的电荷载流子,以及设置在体区中的掺杂电荷 第二种载体。 根据一些实施例,身体区域,源区域和漏极区域在第一方向上定向,身体区域和源区域形成第一结,并且体区域和漏区域形成第二结。 此外,在第一结无偏置的情况下,从体区到源极区的第一结的导电率基本上小于从体区到漏区的第二结的导电率,在第二结 是不偏不倚的 一些实施例还包括在第二方向上取向的晶体管,其中第二方向不平行于第一方向。

    Floating-body memory cell write
    9.
    发明授权
    Floating-body memory cell write 有权
    浮体记忆单元写

    公开(公告)号:US07061806B2

    公开(公告)日:2006-06-13

    申请号:US10954931

    申请日:2004-09-30

    IPC分类号: G11C11/34

    摘要: A system to write to a plurality of memory cells coupled to a word line, each of the plurality of memory cells comprising a transistor having a source, a drain, a body and a gate coupled to the word line. Some embodiments provide biasing of one or more of the plurality of memory cells in saturation to inject charge carriers into the body of the one or more of the plurality of memory cells, and biasing of each of the plurality of memory cells in accumulation to tunnel charge carriers from the body of each of the plurality of memory cells to the gate of each of the plurality of memory cells.

    摘要翻译: 一种写入耦合到字线的多个存储单元的系统,所述多个存储器单元中的每一个包括具有耦合到所述字线的源极,漏极,主体和栅极的晶体管。 一些实施例提供饱和中的多个存储单元中的一个或多个的偏置以将电荷载流子注入多个存储单元中的一个或多个存储器单元的主体中,并且将多个存储单元中的每一个的累积偏压到隧道电荷 载体从多个存储单元的每一个的主体到多个存储单元中的每一个的门。