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    LOW k POROUS SiCOH DIELECTRIC AND INTEGRATION WITH POST FILM FORMATION TREATMENT
    4.
    发明申请
    LOW k POROUS SiCOH DIELECTRIC AND INTEGRATION WITH POST FILM FORMATION TREATMENT 审中-公开
    低k多孔SiCOH电介质和后期成膜处理的整合

    公开(公告)号：US20090061237A1

    公开(公告)日：2009-03-05

    申请号：US11846182

    申请日：2007-08-28

    申请人： Stephen M. Gates ,  Alfred Grill ,  Son Nguyen ,  Satyanarayana V. Nitta ,  Thomas M. Shaw

    发明人： Stephen M. Gates ,  Alfred Grill ,  Son Nguyen ,  Satyanarayana V. Nitta ,  Thomas M. Shaw

    IPC分类号： B32B27/06 ,  C08G77/00 ,  C08G77/12

    CPC分类号： C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02359 ,  H01L21/3105

    摘要： A porous SiCOH (e.g., p-SiCOH) dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The inventive p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bondings as compared to prior art p-SiCOH dielectric films. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. Hence, the inventive p-SiCOH dielectric film has hydrophobicity improvement as compared with prior art p-SiCOH dielectric films. In the present invention, a p-SiCOH dielectric film is produced that is flexible since the pores of the inventive film include stabilized crosslinking —(CHx)— chains wherein x is 1,2 or 3 therein. The dielectric film is produced utilizing an annealing step subsequent deposition that includes a gaseous ambient that includes at least one C—C double bond and/or at least one C—C triple bond.

    摘要翻译： 通过在不饱和烃环境中后处理使多孔SiCOH（例如，p-SiCOH）介电膜在其中由增加的四面体应变引起的应力变化最小化。 与现有技术的p-SiCOH介电膜相比，本发明的p-SiCOH电介质膜具有更多的（（CH x））和更少的Si-O-H和Si-H键。 此外，提供稳定的pSiOCH电介质膜，其中至少在孔内的Si-OH（硅烷醇）和Si-H基团的量通过后处理减少约90％以下。 因此，与现有技术的p-SiCOH介电膜相比，本发明的p-SiCOH介电膜具有疏水性改善。 在本发明中，由于本发明薄膜的孔包括其中x为1,2或3的稳定的交联 - （CHx） - 链，因此制备柔性的p-SiCOH介电膜。 介电膜是利用包括至少一个C-C双键和/或至少一个C-C三键的气态环境的退火步骤进行的。

    SiCOH film preparation using precursors with built-in porogen functionality
    6.
    发明授权
    SiCOH film preparation using precursors with built-in porogen functionality 有权
    使用具有内置致孔剂功能的前体的SiCOH膜制备

    公开(公告)号：US07915180B2

    公开(公告)日：2011-03-29

    申请号：US12425843

    申请日：2009-04-17

    申请人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    发明人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

    摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

    摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。

    SiCOH film preparation using precursors with built-in porogen functionality
    8.
    发明授权
    SiCOH film preparation using precursors with built-in porogen functionality 有权
    使用具有内置致孔剂功能的前体的SiCOH膜制备

    公开(公告)号：US07521377B2

    公开(公告)日：2009-04-21

    申请号：US11329560

    申请日：2006-01-11

    申请人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    发明人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

    摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

    摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。