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    LOW-TEMPERATURE METHODS FOR SPONTANEOUS MATERIAL SPALLING
    5.
    发明申请
    LOW-TEMPERATURE METHODS FOR SPONTANEOUS MATERIAL SPALLING 审中-公开
    用于自发材料膨胀的低温方法

    公开(公告)号：US20120309269A1

    公开(公告)日：2012-12-06

    申请号：US13150813

    申请日：2011-06-01

    申请人： Maha M. Khayyat ,  Norma E. Sosa Cortes ,  Katherine L. Saenger ,  Stephen W. Bedell ,  Devendra K. Sadana

    发明人： Maha M. Khayyat ,  Norma E. Sosa Cortes ,  Katherine L. Saenger ,  Stephen W. Bedell ,  Devendra K. Sadana

    IPC分类号： B24B1/00

    CPC分类号： H01L21/187

    摘要： Method to (i) introduce additional control into a material spalling process, thus improving both the crack initiation and propagation, and (ii) increase the range of selectable spalling depths are provided. In one embodiment, the method includes providing a stressor layer on a surface of a base substrate at a first temperature which is room temperature. Next, the base substrate including the stressor layer is brought to a second temperature which is less than room temperature. The base substrate is spalled at the second temperature to form a spalled material layer. Thereafter, the spalled material layer is returned to room temperature, i.e., the first temperature.

    摘要翻译： 方法：（i）对材料剥落过程引入额外的控制，从而改善裂纹的产生和传播，并提供（ii）提高选择性剥落深度的范围。 在一个实施例中，该方法包括在室温下的第一温度下在基底基板的表面上提供应力层。 接下来，包括应力层的基底衬底达到小于室温的第二温度。 基底基板在第二温度下剥离以形成剥离的材料层。 此后，剥离的材料层返回到室温，即第一温度。

    SURFACE MORPHOLOGY GENERATION AND TRANSFER BY SPALLING
    7.
    发明申请
    SURFACE MORPHOLOGY GENERATION AND TRANSFER BY SPALLING 审中-公开
    表面形态生成和转移

    公开(公告)号：US20130316538A1

    公开(公告)日：2013-11-28

    申请号：US13478749

    申请日：2012-05-23

    申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

    发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

    IPC分类号： H01L21/304 ,  H01L21/306

    CPC分类号： H01L21/304 ,  H01L31/02363 ,  Y02E10/50

    摘要： The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode referred to as spalling is used in the present disclosure to generate or replicate surface patterns. In the case of surface pattern generation, a surface pattern is provided in a stressor layer and then spalling is performed. In the case of surface pattern replication, a surface pattern is formed within or on a surface of a base substrate, and then a stressor layer is applied. After applying the stressor layer, spalling is performed. Generation or replication of surface patterns utilizing spalling provides a low cost means for generation or replication of surface patterns.

    摘要翻译： 在本公开中实现表面图案的产生或表面图案的复制，而不需要采用蚀刻工艺。 相反，在本公开中使用称为剥落的独特的断裂模式来生成或复制表面图案。 在表面图案生成的情况下，在应力层中设置表面图案，然后进行剥离。 在表面图案复制的情况下，在基底表面上或表面上形成表面图案，然后施加应力层。 施加应力层后，进行剥落。 利用剥落产生或复制表面图案为生成或复制表面图案提供了低成本的手段。

    Germanium-containing release layer for transfer of a silicon layer to a substrate
    8.
    发明授权
    Germanium-containing release layer for transfer of a silicon layer to a substrate 有权
    含锗释放层，用于将硅层转移到基底

    公开(公告)号：US08933456B2

    公开(公告)日：2015-01-13

    申请号：US13616322

    申请日：2012-09-14

    申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    IPC分类号： H01L29/38 ,  H01L21/02 ,  H01L21/762

    CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

    摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

    摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。

    Germanium-containing release layer for transfer of a silicon layer to a substrate
    10.
    发明授权
    Germanium-containing release layer for transfer of a silicon layer to a substrate 有权
    含锗释放层，用于将硅层转移到基底

    公开(公告)号：US08298923B2

    公开(公告)日：2012-10-30

    申请号：US12912940

    申请日：2010-10-27

    申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

    摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

    摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。