公开(公告)号：US20130126493A1

公开(公告)日：2013-05-23

申请号：US13302427

申请日：2011-11-22

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

IPC分类号： B23K26/00

CPC分类号： H01L21/268 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/6835 ,  H01L2221/68327

摘要： Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled.

公开(公告)号：US09079269B2

公开(公告)日：2015-07-14

申请号：US13302427

申请日：2011-11-22

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

IPC分类号： B23K26/00 ,  H01L21/304 ,  B23K26/06 ,  B23K26/36 ,  B23K26/40

CPC分类号： H01L21/268 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/6835 ,  H01L2221/68327

摘要： Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled.

摘要翻译： 可以使用激光烧蚀在至少基底衬底顶部的应力层的至少一层覆盖层内形成沟槽。 应力层的非烧蚀部分具有限定要剥离的材料层区域的边缘的边缘。 激光烧蚀还可用于在包括至少镀覆种子层的覆盖材料堆叠内形成沟槽。 在材料堆叠的非烧蚀部分上形成应力层，应力层的一部分具有限定要剥离的材料层区域的边缘的边缘。 可以进一步使用激光烧蚀来形成延伸穿过覆盖应力层并进入基底本身的沟槽。 沟槽具有限定要剥离的材料层区域的边缘的边缘。

公开(公告)号：US08916450B2

公开(公告)日：2014-12-23

申请号：US13565378

申请日：2012-08-02

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ibrahim Alhomoudi

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/00

CPC分类号： H01L21/304 ,  B26F3/00 ,  C30B33/00 ,  C30B33/06 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/321 ,  H01L31/1892 ,  Y02E10/50 ,  Y10T225/10

摘要： Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.

摘要翻译： 利用剥落的材料层从基底基板上去除材料层的方法，其中在剥离期间模式III应力即垂直于在基底基板中产生的断裂面的应力减小。 在剥落过程中模式III应力的显着降低导致剥落过程，其中剥离材料在其一个边缘处具有较小的表面粗糙度，与现有技术的剥离过程相比，其中存在模式III应力并与剥落相竞争。

公开(公告)号：US20140034699A1

公开(公告)日：2014-02-06

申请号：US13565378

申请日：2012-08-02

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ibrahim Alhomoudi

IPC分类号： B26F3/00

CPC分类号： H01L21/304 ,  B26F3/00 ,  C30B33/00 ,  C30B33/06 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/321 ,  H01L31/1892 ,  Y02E10/50 ,  Y10T225/10

摘要： Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.

摘要翻译： 利用剥落的材料层从基底基板上去除材料层的方法，其中在剥离期间模式III应力即垂直于在基底基板中产生的断裂面的应力减小。 在剥落过程中模式III应力的显着降低导致剥落过程，其中剥离材料在其一个边缘处具有较小的表面粗糙度，与现有技术的剥离过程相比，其中存在模式III应力并与剥落相竞争。

公开(公告)号：US20130316538A1

公开(公告)日：2013-11-28

申请号：US13478749

申请日：2012-05-23

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

IPC分类号： H01L21/304 ,  H01L21/306

CPC分类号： H01L21/304 ,  H01L31/02363 ,  Y02E10/50

摘要： The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode referred to as spalling is used in the present disclosure to generate or replicate surface patterns. In the case of surface pattern generation, a surface pattern is provided in a stressor layer and then spalling is performed. In the case of surface pattern replication, a surface pattern is formed within or on a surface of a base substrate, and then a stressor layer is applied. After applying the stressor layer, spalling is performed. Generation or replication of surface patterns utilizing spalling provides a low cost means for generation or replication of surface patterns.

摘要翻译： 在本公开中实现表面图案的产生或表面图案的复制，而不需要采用蚀刻工艺。 相反，在本公开中使用称为剥落的独特的断裂模式来生成或复制表面图案。 在表面图案生成的情况下，在应力层中设置表面图案，然后进行剥离。 在表面图案复制的情况下，在基底表面上或表面上形成表面图案，然后施加应力层。 施加应力层后，进行剥落。 利用剥落产生或复制表面图案为生成或复制表面图案提供了低成本的手段。

公开(公告)号：US08709957B2

公开(公告)日：2014-04-29

申请号：US13481062

申请日：2012-05-25

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ibrahim Alhomoudi

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/304 ,  B81C99/008 ,  H01L21/02002

摘要： A method for spalling local areas of a base substrate utilizing at least one stressor layer portion which is located on a portion, but not all, of an uppermost surface of a base substrate. The method includes providing a base substrate having a uniform thickness and a planar uppermost surface spanning across an entirety of the base substrate. At least one stressor layer portion having a shape is formed on at least a portion, but not all, of the uppermost surface of the base substrate. Spalling is performed which removes a material layer portion from the base substrate and provides a remaining base substrate portion. The material layer portion has the shape of the at least one stressor layer portion, while the remaining base substrate portion has at least one opening located therein which correlates to the shape of the at least one stressor layer.

摘要翻译： 利用位于基底的最上表面的一部分但不是全部的至少一个应力层部分剥离基底基板的局部区域的方法。 该方法包括提供具有均匀厚度的基底基底和跨越整个基底基底的平面最上表面。 至少一个具有形状的应力层部分形成在基底基板的最上表面的至少一部分但不是全部。 进行剥离，其从基底基板移除材料层部分并提供剩余的基底部分。 材料层部分具有至少一个应力层部分的形状，而剩余的基底部分具有位于其中的至少一个与至少一个应力层的形状相关的开口。

公开(公告)号：US20130316542A1

公开(公告)日：2013-11-28

申请号：US13481062

申请日：2012-05-25

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ibrahim Alhomoudi

IPC分类号： H01L21/31

CPC分类号： H01L21/304 ,  B81C99/008 ,  H01L21/02002

摘要： A method for spalling local areas of a base substrate utilizing at least one stressor layer portion which is located on a portion, but not all, of an uppermost surface of a base substrate. The method includes providing a base substrate having a uniform thickness and a planar uppermost surface spanning across an entirety of the base substrate. At least one stressor layer portion having a shape is formed on at least a portion, but not all, of the uppermost surface of the base substrate. Spalling is performed which removes a material layer portion from the base substrate and provides a remaining base substrate portion. The material layer portion has the shape of the at least one stressor layer portion, while the remaining base substrate portion has at least one opening located therein which correlates to the shape of the at least one stressor layer.

摘要翻译： 利用位于基底的最上表面的一部分但不是全部的至少一个应力层部分剥离基底基板的局部区域的方法。 该方法包括提供具有均匀厚度的基底基底和横跨整个基底基底的平面最上表面。 至少一个具有形状的应力层部分形成在基底基板的最上表面的至少一部分但不是全部。 进行剥离，其从基底基板移除材料层部分并提供剩余的基底部分。 材料层部分具有至少一个应力层部分的形状，而剩余的基底部分具有位于其中的至少一个与至少一个应力层的形状相关的开口。

公开(公告)号：US20130082357A1

公开(公告)日：2013-04-04

申请号：US13253059

申请日：2011-10-04

申请人： Ibrahim Alhomoudi ,  Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Ibrahim Alhomoudi ,  Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L29/16 ,  H01L29/04 ,  H01L21/60

CPC分类号： H01L31/02363 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03682 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A base layer of a semiconductor material is formed with a naturally textured surface. The base layer may be incorporated within a photovoltaic structure. A controlled spalling technique, in which substrate fracture is propagated in a selected direction to cause the formation of facets, is employed. Spalling in the [110] directions of a (001) silicon substrate results in the formation of such facets of the resulting base layer, providing a natural surface texture.

摘要翻译： 半导体材料的基层由天然纹理表面形成。 基底层可以结合在光伏结构内。 使用受控的剥落技术，其中衬底断裂沿所选方向传播以引起小平面的形成。 （001）硅衬底的[110]方向剥落导致所得到的基底层的这种面的形成，提供了自然的表面纹理。

公开(公告)号：US20130005116A1

公开(公告)日：2013-01-03

申请号：US13172793

申请日：2011-06-29

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana ,  Davood Shahrjerdi ,  Norma E. Sosa Cortes

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana ,  Davood Shahrjerdi ,  Norma E. Sosa Cortes

IPC分类号： H01L21/301

CPC分类号： H01L21/304 ,  C03C15/00 ,  C03C2218/34 ,  H01L31/1892

摘要： A method to minimize edge-related substrate breakage during spalling using an edge-exclusion region where the stressor layer is either non-present (excluded either during deposition or removed afterwards) or present but significantly non-adhered to the substrate surface in the exclusion region is provided. In one embodiment, the method includes forming an edge exclusion material on an upper surface and near an edge of a base substrate. A stressor layer is then formed on exposed portions of the upper surface of the base substrate and atop the edge exclusion material, A portion of the base substrate that is located beneath the stressor layer and which is not covered by the edge exclusion material is then spalled.

摘要翻译： 使用边缘排除区域（其中应力层不存在（在沉积期间排除或随后除去）或存在但显着不附着于排除区域中的基底表面的边缘排除区域来最小化边缘相关底物断裂的方法 被提供。 在一个实施例中，该方法包括在基底基板的上表面和边缘附近形成边缘排除材料。 然后在基底基板的上表面和边缘排除材料的顶部的暴露部分上形成应力层，然后剥离位于应力层下方并且不被边缘排除材料覆盖的基底基板的一部分 。

公开(公告)号：US08748296B2

公开(公告)日：2014-06-10

申请号：US13172793

申请日：2011-06-29

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana ,  Davood Shahrjerdi ,  Norma E. Sosa Cortes

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana ,  Davood Shahrjerdi ,  Norma E. Sosa Cortes

IPC分类号： H01L21/00

CPC分类号： H01L21/304 ,  C03C15/00 ,  C03C2218/34 ,  H01L31/1892

摘要： A method to minimize edge-related substrate breakage during spalling using an edge-exclusion region where the stressor layer is either non-present (excluded either during deposition or removed afterwards) or present but significantly non-adhered to the substrate surface in the exclusion region is provided. In one embodiment, the method includes forming an edge exclusion material on an upper surface and near an edge of a base substrate. A stressor layer is then formed on exposed portions of the upper surface of the base substrate and atop the edge exclusion material, A portion of the base substrate that is located beneath the stressor layer and which is not covered by the edge exclusion material is then spalled.

摘要翻译： 使用边缘排除区域（其中应力层不存在（在沉积期间排除或随后除去）或存在但显着不附着于排除区域中的基底表面的边缘排除区域来最小化边缘相关底物断裂的方法 被提供。 在一个实施例中，该方法包括在基底基板的上表面和边缘附近形成边缘排除材料。 然后在基底基板的上表面和边缘排除材料的顶部的暴露部分上形成应力层，然后剥离位于应力层下方并且不被边缘排除材料覆盖的基底基板的一部分 。