公开(公告)号：US20130316538A1

公开(公告)日：2013-11-28

申请号：US13478749

申请日：2012-05-23

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

IPC分类号： H01L21/304 ,  H01L21/306

CPC分类号： H01L21/304 ,  H01L31/02363 ,  Y02E10/50

摘要： The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode referred to as spalling is used in the present disclosure to generate or replicate surface patterns. In the case of surface pattern generation, a surface pattern is provided in a stressor layer and then spalling is performed. In the case of surface pattern replication, a surface pattern is formed within or on a surface of a base substrate, and then a stressor layer is applied. After applying the stressor layer, spalling is performed. Generation or replication of surface patterns utilizing spalling provides a low cost means for generation or replication of surface patterns.

摘要翻译： 在本公开中实现表面图案的产生或表面图案的复制，而不需要采用蚀刻工艺。 相反，在本公开中使用称为剥落的独特的断裂模式来生成或复制表面图案。 在表面图案生成的情况下，在应力层中设置表面图案，然后进行剥离。 在表面图案复制的情况下，在基底表面上或表面上形成表面图案，然后施加应力层。 施加应力层后，进行剥落。 利用剥落产生或复制表面图案为生成或复制表面图案提供了低成本的手段。

公开(公告)号：US20130126493A1

公开(公告)日：2013-05-23

申请号：US13302427

申请日：2011-11-22

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

IPC分类号： B23K26/00

CPC分类号： H01L21/268 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/6835 ,  H01L2221/68327

摘要： Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled.

公开(公告)号：US20130082357A1

公开(公告)日：2013-04-04

申请号：US13253059

申请日：2011-10-04

申请人： Ibrahim Alhomoudi ,  Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Ibrahim Alhomoudi ,  Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L29/16 ,  H01L29/04 ,  H01L21/60

CPC分类号： H01L31/02363 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03682 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A base layer of a semiconductor material is formed with a naturally textured surface. The base layer may be incorporated within a photovoltaic structure. A controlled spalling technique, in which substrate fracture is propagated in a selected direction to cause the formation of facets, is employed. Spalling in the [110] directions of a (001) silicon substrate results in the formation of such facets of the resulting base layer, providing a natural surface texture.

摘要翻译： 半导体材料的基层由天然纹理表面形成。 基底层可以结合在光伏结构内。 使用受控的剥落技术，其中衬底断裂沿所选方向传播以引起小平面的形成。 （001）硅衬底的[110]方向剥落导致所得到的基底层的这种面的形成，提供了自然的表面纹理。

公开(公告)号：US08936961B2

公开(公告)日：2015-01-20

申请号：US13481795

申请日：2012-05-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/00

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

公开(公告)号：US20130316488A1

公开(公告)日：2013-11-28

申请号：US13481795

申请日：2012-05-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02 ,  H01L21/302 ,  H01L21/762

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

公开(公告)号：US08916450B2

公开(公告)日：2014-12-23

申请号：US13565378

申请日：2012-08-02

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ibrahim Alhomoudi

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/00

CPC分类号： H01L21/304 ,  B26F3/00 ,  C30B33/00 ,  C30B33/06 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/321 ,  H01L31/1892 ,  Y02E10/50 ,  Y10T225/10

摘要： Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.

摘要翻译： 利用剥落的材料层从基底基板上去除材料层的方法，其中在剥离期间模式III应力即垂直于在基底基板中产生的断裂面的应力减小。 在剥落过程中模式III应力的显着降低导致剥落过程，其中剥离材料在其一个边缘处具有较小的表面粗糙度，与现有技术的剥离过程相比，其中存在模式III应力并与剥落相竞争。

公开(公告)号：US20140034699A1

公开(公告)日：2014-02-06

申请号：US13565378

申请日：2012-08-02

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ibrahim Alhomoudi

IPC分类号： B26F3/00

CPC分类号： H01L21/304 ,  B26F3/00 ,  C30B33/00 ,  C30B33/06 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/321 ,  H01L31/1892 ,  Y02E10/50 ,  Y10T225/10

摘要： Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.

摘要翻译： 利用剥落的材料层从基底基板上去除材料层的方法，其中在剥离期间模式III应力即垂直于在基底基板中产生的断裂面的应力减小。 在剥落过程中模式III应力的显着降低导致剥落过程，其中剥离材料在其一个边缘处具有较小的表面粗糙度，与现有技术的剥离过程相比，其中存在模式III应力并与剥落相竞争。

公开(公告)号：US20130312819A1

公开(公告)日：2013-11-28

申请号：US13533229

申请日：2012-06-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02 ,  H01L29/06

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

公开(公告)号：US09079269B2

公开(公告)日：2015-07-14

申请号：US13302427

申请日：2011-11-22

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

IPC分类号： B23K26/00 ,  H01L21/304 ,  B23K26/06 ,  B23K26/36 ,  B23K26/40

CPC分类号： H01L21/268 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/6835 ,  H01L2221/68327

摘要： Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled.

摘要翻译： 可以使用激光烧蚀在至少基底衬底顶部的应力层的至少一层覆盖层内形成沟槽。 应力层的非烧蚀部分具有限定要剥离的材料层区域的边缘的边缘。 激光烧蚀还可用于在包括至少镀覆种子层的覆盖材料堆叠内形成沟槽。 在材料堆叠的非烧蚀部分上形成应力层，应力层的一部分具有限定要剥离的材料层区域的边缘的边缘。 可以进一步使用激光烧蚀来形成延伸穿过覆盖应力层并进入基底本身的沟槽。 沟槽具有限定要剥离的材料层区域的边缘的边缘。

公开(公告)号：US09099596B2

公开(公告)日：2015-08-04

申请号：US13194301

申请日：2011-07-29

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0745 ,  H01L31/18 ,  H01L31/0312 ,  H01L31/0747 ,  H01L31/0725 ,  H01L31/078 ,  H01L31/20

CPC分类号： H01L31/0725 ,  C23C14/3407 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/074 ,  H01L31/0747 ,  H01L31/078 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.

摘要翻译： 光伏器件和方法包括掺杂的含锗衬底，在第一侧耦合到衬底的发射极触点和在与第一侧相对的一侧耦合到衬底的后触点。 发射极包括与衬底相反的导电类型的至少一个掺杂层，而后接触包括至少一个与衬底相同导电类型的掺杂层。 发射极接触的至少一个掺杂层或背接触的至少一个掺杂层与衬底直接接触，并且发射极接触或后接触的至少一个掺杂层包括n型材料 具有小于衬底的电子亲和力，或具有大于衬底的孔亲合力的p型材料。