公开(公告)号：US20130025654A1

公开(公告)日：2013-01-31

申请号：US13193871

申请日：2011-07-29

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/1892 ,  H01L31/02167 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/076 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes bonding a substrate to a germanium-containing semiconductor layer with a stressor layer, wherein the stressor layer cleaves the germanium-containing semiconductor layer. At least one semiconductor layer is formed on a cleaved surface of the germanium-containing semiconductor layer that is opposite the conductivity type of the germanium-containing semiconductor layer to provide a first solar cell. The first solar cell absorbs a first range of wavelengths. At least one second solar cell may be formed on the first solar cell, wherein the at least one second solar cell is composed of at least one semiconductor material to absorb a second range of wavelengths that is different than the first range wavelengths absorbed by the first solar cell.

摘要翻译： 一种形成光伏器件的方法，该光电器件包括将衬底粘合到含锗半导体层与应力层，其中所述应力层切割含锗半导体层。 在与含锗半导体层的导电类型相反的含锗半导体层的切割表面上形成至少一个半导体层以提供第一太阳能电池。 第一太阳能电池吸收第一波长范围。 可以在第一太阳能电池上形成至少一个第二太阳能电池，其中至少一个第二太阳能电池由至少一个半导体材料组成，以吸收不同于由第一太阳能电池吸收的第一范围波长的第二波长范围 太阳能电池。

公开(公告)号：US09099596B2

公开(公告)日：2015-08-04

申请号：US13194301

申请日：2011-07-29

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0745 ,  H01L31/18 ,  H01L31/0312 ,  H01L31/0747 ,  H01L31/0725 ,  H01L31/078 ,  H01L31/20

CPC分类号： H01L31/0725 ,  C23C14/3407 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/074 ,  H01L31/0747 ,  H01L31/078 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.

摘要翻译： 光伏器件和方法包括掺杂的含锗衬底，在第一侧耦合到衬底的发射极触点和在与第一侧相对的一侧耦合到衬底的后触点。 发射极包括与衬底相反的导电类型的至少一个掺杂层，而后接触包括至少一个与衬底相同导电类型的掺杂层。 发射极接触的至少一个掺杂层或背接触的至少一个掺杂层与衬底直接接触，并且发射极接触或后接触的至少一个掺杂层包括n型材料 具有小于衬底的电子亲和力，或具有大于衬底的孔亲合力的p型材料。

公开(公告)号：US08912424B2

公开(公告)日：2014-12-16

申请号：US13612632

申请日：2012-09-12

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/00

CPC分类号： H01L31/1892 ,  H01L31/02167 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/076 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes bonding a substrate to a germanium-containing semiconductor layer with a stressor layer, wherein the stressor layer cleaves the germanium-containing semiconductor layer. At least one semiconductor layer is formed on a cleaved surface of the germanium-containing semiconductor layer that is opposite the conductivity type of the germanium-containing semiconductor layer to provide a first solar cell. The first solar cell absorbs a first range of wavelengths. At least one second solar cell may be formed on the first solar cell, wherein the at least one second solar cell is composed of at least one semiconductor material to absorb a second range of wavelengths that is different than the first range wavelengths absorbed by the first solar cell.

摘要翻译： 一种形成光伏器件的方法，该光电器件包括将衬底粘合到含锗半导体层与应力层，其中所述应力层切割含锗半导体层。 在与含锗半导体层的导电类型相反的含锗半导体层的切割表面上形成至少一个半导体层以提供第一太阳能电池。 第一太阳能电池吸收第一波长范围。 可以在第一太阳能电池上形成至少一个第二太阳能电池，其中至少一个第二太阳能电池由至少一个半导体材料组成，以吸收不同于由第一太阳能电池吸收的第一范围波长的第二波长范围 太阳能电池。

公开(公告)号：US20130025659A1

公开(公告)日：2013-01-31

申请号：US13612632

申请日：2012-09-12

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0725

CPC分类号： H01L31/1892 ,  H01L31/02167 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/076 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes bonding a substrate to a germanium-containing semiconductor layer with a stressor layer, wherein the stressor layer cleaves the germanium-containing semiconductor layer. At least one semiconductor layer is formed on a cleaved surface of the germanium-containing semiconductor layer that is opposite the conductivity type of the germanium-containing semiconductor layer to provide a first solar cell. The first solar cell absorbs a first range of wavelengths. At least one second solar cell may be formed on the first solar cell, wherein the at least one second solar cell is composed of at least one semiconductor material to absorb a second range of wavelengths that is different than the first range wavelengths absorbed by the first solar cell.

公开(公告)号：US10304984B2

公开(公告)日：2019-05-28

申请号：US13607004

申请日：2012-09-07

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/074 ,  H01L31/078 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0725 ,  H01L31/0747 ,  C23C14/34 ,  H01L31/18 ,  H01L31/20

摘要： A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.

公开(公告)号：US20130025658A1

公开(公告)日：2013-01-31

申请号：US13607004

申请日：2012-09-07

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0725 ,  H01L31/0224

CPC分类号： H01L31/0725 ,  C23C14/3407 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/074 ,  H01L31/0747 ,  H01L31/078 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.

公开(公告)号：US20130025655A1

公开(公告)日：2013-01-31

申请号：US13194301

申请日：2011-07-29

申请人： STEPHEN W. BEDELL ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： STEPHEN W. BEDELL ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/0725 ,  C23C14/3407 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/074 ,  H01L31/0747 ,  H01L31/078 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.

公开(公告)号：US20130092218A1

公开(公告)日：2013-04-18

申请号：US13274938

申请日：2011-10-17

申请人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0264 ,  H01L31/18

CPC分类号： H01L31/0725 ,  H01L31/0693 ,  H01L31/1808 ,  Y02E10/544 ,  Y02P70/521

摘要： A multi-junction III-V photovoltaic device is provided that includes at least one top cell comprised of at least one III-V compound semiconductor material; and a bottom cell in contact with a surface of the at least one top cell. The bottom cell includes a germanium-containing layer in contact with the at least one top cell, at least one intrinsic hydrogenated silicon-containing layer in contact with a surface of the germanium-containing layer, and at least one doped hydrogenated silicon-containing layer in contact with a surface of the at least one intrinsic hydrogenated silicon-containing layer. The intrinsic and doped silicon-containing layers can be amorphous, nano/micro-crystalline, poly-crystalline or single-crystalline.

摘要翻译： 提供了多结III-V光伏器件，其包括至少一个由至少一个III-V化合物半导体材料构成的顶部电池; 以及与所述至少一个顶部单元的表面接触的底部单元。 底部电池包括与至少一个顶部电池接触的含锗层，与含锗层的表面接触的至少一个本征氢化含硅层和至少一个掺杂氢化含硅层 与所述至少一个本征氢化含硅层的表面接触。 本征和掺杂的含硅层可以是无定形，纳米/微晶，多晶或单晶。

公开(公告)号：US20130095598A1

公开(公告)日：2013-04-18

申请号：US13602122

申请日：2012-09-01

申请人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/18

CPC分类号： H01L31/0725 ,  H01L31/0693 ,  H01L31/1808 ,  Y02E10/544 ,  Y02P70/521

摘要： A multi-junction III-V photovoltaic device is provided that includes at least one top cell comprised of at least one III-V compound semiconductor material; and a bottom cell in contact with a surface of the at least one top cell. The bottom cell includes a germanium-containing layer in contact with the at least one top cell, at least one intrinsic hydrogenated silicon-containing layer in contact with a surface of the germanium-containing layer, and at least one doped hydrogenated silicon-containing layer in contact with a surface of the at least one intrinsic hydrogenated silicon-containing layer. The intrinsic and doped silicon-containing layers can be amorphous, nano/micro-crystalline, poly-crystalline or single-crystalline.

公开(公告)号：US20120329197A1

公开(公告)日：2012-12-27

申请号：US13604932

申请日：2012-09-06

申请人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/18

CPC分类号： H01L31/1808 ,  H01L31/03926 ,  H01L31/06875 ,  H01L31/1892 ,  Y02E10/544

摘要： A photovoltaic device including at least one top cell that include at least one III-V semiconductor material; a bottom cell of a germanium containing material having a thickness of 10 microns or less; and a back surface field (BSF) region provided by a eutectic alloy layer of aluminum and germanium on the back surface of the bottom cell of that is opposite the interface between the bottom cell and at least one of the top cells. The eutectic alloy of aluminum and germanium bonds the bottom cell of the germanium-containing material to a supporting substrate.

摘要翻译： 一种光电器件，包括至少一个包含至少一个III-V半导体材料的顶部单元; 厚度为10微米或更小的含锗材料的底部电池; 和由底部电池底表面上的铝和锗的共晶合金层提供的后表面场（BSF）区域，其与底部电池和至少一个顶部电池之间的界面相对。 铝和锗的共晶合金将含锗材料的底部电池与支撑衬底结合。