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公开(公告)号:US08679943B2
公开(公告)日:2014-03-25
申请号:US13215738
申请日:2011-08-23
IPC分类号: H01L21/30
CPC分类号: H01L21/30 , H01L31/1892 , Y02E10/50
摘要: A spalling method is provided that includes depositing a stressor layer on surface of a base substrate, and contacting the stressor layer with a planar transfer. The planar transfer surface is then traversed along a plane that is parallel to and having a vertical offset from the upper surface of the base substrate. The planar transfer surface is traversed in a direction from a first edge of the base substrate to an opposing second edge of the base substrate to cleave the base substrate and transfer a spalled portion of the base substrate to the planar transfer surface. The vertical offset between the plane along which the planar transfer surface is traversed and the upper surface of the base substrate is a fixed distance. The fixed distance of the vertical offset provides a uniform spalling force. A spalling method is also provided that includes a transfer roller.
摘要翻译: 提供了一种剥落方法,其包括在基底表面上沉积应力层,并使应力层与平面转移接触。 然后,平面转移表面沿着平行于并且具有从基底基板的上表面垂直偏移的平面穿过。 平面转移表面在从基底基板的第一边缘到基底基板的相对的第二边缘的方向上穿过,以将基底基板切割并将基底基板的剥离部分转印到平面转印表面。 平面转移面沿着平面移动的平面与基底基板的上表面之间的垂直偏移是固定的距离。 垂直偏移的固定距离提供均匀的剥落力。 还提供了包括转印辊的剥落方法。
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公开(公告)号:US20130052798A1
公开(公告)日:2013-02-28
申请号:US13215738
申请日:2011-08-23
IPC分类号: H01L21/30
CPC分类号: H01L21/30 , H01L31/1892 , Y02E10/50
摘要: A spalling method is provided that includes depositing a stressor layer on surface of a base substrate, and contacting the stressor layer with a planar transfer. The planar transfer surface is then traversed along a plane that is parallel to and having a vertical offset from the upper surface of the base substrate. The planar transfer surface is traversed in a direction from a first edge of the base substrate to an opposing second edge of the base substrate to cleave the base substrate and transfer a spalled portion of the base substrate to the planar transfer surface. The vertical offset between the plane along which the planar transfer surface is traversed and the upper surface of the base substrate is a fixed distance. The fixed distance of the vertical offset provides a uniform spalling force. A spalling method is also provided that includes a transfer roller.
摘要翻译: 提供了一种剥落方法,其包括在基底表面上沉积应力层,并使应力层与平面转移接触。 然后,平面转移表面沿着平行于并且具有从基底基板的上表面垂直偏移的平面穿过。 平面转移表面在从基底基板的第一边缘到基底基板的相对的第二边缘的方向上穿过,以将基底基板切割并将基底基板的剥离部分转印到平面转印表面。 平面转移面沿着平面移动的平面与基底基板的上表面之间的垂直偏移是固定的距离。 垂直偏移的固定距离提供均匀的剥落力。 还提供了包括转印辊的剥落方法。
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3.
公开(公告)号:US08748296B2
公开(公告)日:2014-06-10
申请号:US13172793
申请日:2011-06-29
申请人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Devendra K. Sadana , Davood Shahrjerdi , Norma E. Sosa Cortes
发明人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Devendra K. Sadana , Davood Shahrjerdi , Norma E. Sosa Cortes
IPC分类号: H01L21/00
CPC分类号: H01L21/304 , C03C15/00 , C03C2218/34 , H01L31/1892
摘要: A method to minimize edge-related substrate breakage during spalling using an edge-exclusion region where the stressor layer is either non-present (excluded either during deposition or removed afterwards) or present but significantly non-adhered to the substrate surface in the exclusion region is provided. In one embodiment, the method includes forming an edge exclusion material on an upper surface and near an edge of a base substrate. A stressor layer is then formed on exposed portions of the upper surface of the base substrate and atop the edge exclusion material, A portion of the base substrate that is located beneath the stressor layer and which is not covered by the edge exclusion material is then spalled.
摘要翻译: 使用边缘排除区域(其中应力层不存在(在沉积期间排除或随后除去)或存在但显着不附着于排除区域中的基底表面的边缘排除区域来最小化边缘相关底物断裂的方法 被提供。 在一个实施例中,该方法包括在基底基板的上表面和边缘附近形成边缘排除材料。 然后在基底基板的上表面和边缘排除材料的顶部的暴露部分上形成应力层,然后剥离位于应力层下方并且不被边缘排除材料覆盖的基底基板的一部分 。
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公开(公告)号:US08709957B2
公开(公告)日:2014-04-29
申请号:US13481062
申请日:2012-05-25
申请人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ibrahim Alhomoudi
发明人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ibrahim Alhomoudi
IPC分类号: H01L21/31 , H01L21/469
CPC分类号: H01L21/304 , B81C99/008 , H01L21/02002
摘要: A method for spalling local areas of a base substrate utilizing at least one stressor layer portion which is located on a portion, but not all, of an uppermost surface of a base substrate. The method includes providing a base substrate having a uniform thickness and a planar uppermost surface spanning across an entirety of the base substrate. At least one stressor layer portion having a shape is formed on at least a portion, but not all, of the uppermost surface of the base substrate. Spalling is performed which removes a material layer portion from the base substrate and provides a remaining base substrate portion. The material layer portion has the shape of the at least one stressor layer portion, while the remaining base substrate portion has at least one opening located therein which correlates to the shape of the at least one stressor layer.
摘要翻译: 利用位于基底的最上表面的一部分但不是全部的至少一个应力层部分剥离基底基板的局部区域的方法。 该方法包括提供具有均匀厚度的基底基底和跨越整个基底基底的平面最上表面。 至少一个具有形状的应力层部分形成在基底基板的最上表面的至少一部分但不是全部。 进行剥离,其从基底基板移除材料层部分并提供剩余的基底部分。 材料层部分具有至少一个应力层部分的形状,而剩余的基底部分具有位于其中的至少一个与至少一个应力层的形状相关的开口。
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公开(公告)号:US08709914B2
公开(公告)日:2014-04-29
申请号:US13159893
申请日:2011-06-14
CPC分类号: H01L21/304 , H01L31/1896 , Y02E10/50 , Y02P80/30
摘要: A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.
摘要翻译: 提供了一种受控层转移的方法。 该方法包括向基底基底提供应力层。 应力层具有位于基底基板的上表面顶部的应力层,以及位于基底基板的每个侧壁边缘附近的自锁紧应力层。 然后将剥落抑制剂施加在基底衬底的应力层部分的顶部,然后将应力层的自锁定应力层部分与应力层部分分离。 位于应力层部分之下的基底部分的一部分然后从原始基底剥离。 剥落包括从应力层部分顶部置换剥落抑制剂。 剥落后,从基底基板的剥离部的顶部除去应力层。
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公开(公告)号:US20130316542A1
公开(公告)日:2013-11-28
申请号:US13481062
申请日:2012-05-25
申请人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ibrahim Alhomoudi
发明人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ibrahim Alhomoudi
IPC分类号: H01L21/31
CPC分类号: H01L21/304 , B81C99/008 , H01L21/02002
摘要: A method for spalling local areas of a base substrate utilizing at least one stressor layer portion which is located on a portion, but not all, of an uppermost surface of a base substrate. The method includes providing a base substrate having a uniform thickness and a planar uppermost surface spanning across an entirety of the base substrate. At least one stressor layer portion having a shape is formed on at least a portion, but not all, of the uppermost surface of the base substrate. Spalling is performed which removes a material layer portion from the base substrate and provides a remaining base substrate portion. The material layer portion has the shape of the at least one stressor layer portion, while the remaining base substrate portion has at least one opening located therein which correlates to the shape of the at least one stressor layer.
摘要翻译: 利用位于基底的最上表面的一部分但不是全部的至少一个应力层部分剥离基底基板的局部区域的方法。 该方法包括提供具有均匀厚度的基底基底和横跨整个基底基底的平面最上表面。 至少一个具有形状的应力层部分形成在基底基板的最上表面的至少一部分但不是全部。 进行剥离,其从基底基板移除材料层部分并提供剩余的基底部分。 材料层部分具有至少一个应力层部分的形状,而剩余的基底部分具有位于其中的至少一个与至少一个应力层的形状相关的开口。
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公开(公告)号:US20130082357A1
公开(公告)日:2013-04-04
申请号:US13253059
申请日:2011-10-04
申请人: Ibrahim Alhomoudi , Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Davood Shahrjerdi
发明人: Ibrahim Alhomoudi , Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Davood Shahrjerdi
CPC分类号: H01L31/02363 , H01L31/028 , H01L31/0304 , H01L31/03682 , Y02E10/544 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要: A base layer of a semiconductor material is formed with a naturally textured surface. The base layer may be incorporated within a photovoltaic structure. A controlled spalling technique, in which substrate fracture is propagated in a selected direction to cause the formation of facets, is employed. Spalling in the [110] directions of a (001) silicon substrate results in the formation of such facets of the resulting base layer, providing a natural surface texture.
摘要翻译: 半导体材料的基层由天然纹理表面形成。 基底层可以结合在光伏结构内。 使用受控的剥落技术,其中衬底断裂沿所选方向传播以引起小平面的形成。 (001)硅衬底的[110]方向剥落导致所得到的基底层的这种面的形成,提供了自然的表面纹理。
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公开(公告)号:US08916450B2
公开(公告)日:2014-12-23
申请号:US13565378
申请日:2012-08-02
申请人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Katherine L. Saenger , Ibrahim Alhomoudi
发明人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Katherine L. Saenger , Ibrahim Alhomoudi
CPC分类号: H01L21/304 , B26F3/00 , C30B33/00 , C30B33/06 , H01L21/2855 , H01L21/32051 , H01L21/321 , H01L31/1892 , Y02E10/50 , Y10T225/10
摘要: Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.
摘要翻译: 利用剥落的材料层从基底基板上去除材料层的方法,其中在剥离期间模式III应力即垂直于在基底基板中产生的断裂面的应力减小。 在剥落过程中模式III应力的显着降低导致剥落过程,其中剥离材料在其一个边缘处具有较小的表面粗糙度,与现有技术的剥离过程相比,其中存在模式III应力并与剥落相竞争。
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公开(公告)号:US20140034699A1
公开(公告)日:2014-02-06
申请号:US13565378
申请日:2012-08-02
申请人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Katherine L. Saenger , Ibrahim Alhomoudi
发明人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Katherine L. Saenger , Ibrahim Alhomoudi
IPC分类号: B26F3/00
CPC分类号: H01L21/304 , B26F3/00 , C30B33/00 , C30B33/06 , H01L21/2855 , H01L21/32051 , H01L21/321 , H01L31/1892 , Y02E10/50 , Y10T225/10
摘要: Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.
摘要翻译: 利用剥落的材料层从基底基板上去除材料层的方法,其中在剥离期间模式III应力即垂直于在基底基板中产生的断裂面的应力减小。 在剥落过程中模式III应力的显着降低导致剥落过程,其中剥离材料在其一个边缘处具有较小的表面粗糙度,与现有技术的剥离过程相比,其中存在模式III应力并与剥落相竞争。
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10.
公开(公告)号:US20130005116A1
公开(公告)日:2013-01-03
申请号:US13172793
申请日:2011-06-29
申请人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Devendra K. Sadana , Davood Shahrjerdi , Norma E. Sosa Cortes
发明人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Devendra K. Sadana , Davood Shahrjerdi , Norma E. Sosa Cortes
IPC分类号: H01L21/301
CPC分类号: H01L21/304 , C03C15/00 , C03C2218/34 , H01L31/1892
摘要: A method to minimize edge-related substrate breakage during spalling using an edge-exclusion region where the stressor layer is either non-present (excluded either during deposition or removed afterwards) or present but significantly non-adhered to the substrate surface in the exclusion region is provided. In one embodiment, the method includes forming an edge exclusion material on an upper surface and near an edge of a base substrate. A stressor layer is then formed on exposed portions of the upper surface of the base substrate and atop the edge exclusion material, A portion of the base substrate that is located beneath the stressor layer and which is not covered by the edge exclusion material is then spalled.
摘要翻译: 使用边缘排除区域(其中应力层不存在(在沉积期间排除或随后除去)或存在但显着不附着于排除区域中的基底表面的边缘排除区域来最小化边缘相关底物断裂的方法 被提供。 在一个实施例中,该方法包括在基底基板的上表面和边缘附近形成边缘排除材料。 然后在基底基板的上表面和边缘排除材料的顶部的暴露部分上形成应力层,然后剥离位于应力层下方并且不被边缘排除材料覆盖的基底基板的一部分 。
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