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1.发明授权公开(公告)号：US06273992B1
公开(公告)日：2001-08-14
申请号：US09557356
申请日：2000-04-25
IPC分类号： H05H100
CPC分类号： G01N1/32 , Y10S134/902
摘要： A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow. The flow mist droplets are drawn from the flow onto the cooled wafer surface providing a thin layer of liquid aqueous HF which reacts with the oxide layer at a faster rate than previously used HF vapor.
摘要翻译： 描述了一种用于在硅晶片上分解氧化硅层的方法和装置，其采用将HF水的加热雾施加到冷却晶片表面。 该技术应用于使用扫描液滴对痕量杂质的硅晶片的分析，以在氧化硅分解后收集含有杂质的残余物。 与使用气相分解技术的现有技术相比，该新方法提供了氧化硅分解速率的一个数量级的增加。 此外，新颖的方法提供了比现有技术更好的控制和更安全地布置腐蚀性蒸气。 该装置包括装载有载气供应的活动圆顶和用于将由特殊设计的雾发生器产生的加热的HF水雾喷射到载气流中的装置。 流雾液滴从流中被抽吸到冷却的晶片表面上，提供与先前使用的HF蒸汽相比更快的速率与氧化物层反应的液体HF水溶液的薄层。
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2.发明授权公开(公告)号：US06475291B1
公开(公告)日：2002-11-05
申请号：US09557605
申请日：2000-04-25
IPC分类号： C23G102
CPC分类号： G01N1/32 , Y10S134/902
摘要： A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow. The flow mist droplets are drawn from the flow onto the cooled wafer surface providing a thin layer of liquid aqueous HF which reacts with the oxide layer at a faster rate than previously used HF vapor.
摘要翻译： 描述了一种用于在硅晶片上分解氧化硅层的方法和装置，其采用将HF水的加热雾施加到冷却晶片表面。 该技术应用于使用扫描液滴对痕量杂质的硅晶片的分析，以在氧化硅分解后收集含有杂质的残余物。 与使用气相分解技术的现有技术相比，该新方法提供了氧化硅分解速率的一个数量级的增加。 此外，新颖的方法提供了比现有技术更好的控制和更安全地布置腐蚀性蒸气。 该装置包括装载有载气供应的活动圆顶和用于将由特殊设计的雾发生器产生的加热的HF水雾喷射到载气流中的装置。 流雾液滴从流中被抽吸到冷却的晶片表面上，提供与先前使用的HF蒸汽相比更快的速率与氧化物层反应的液体HF水溶液的薄层。
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公开(公告)号：US6053984A
公开(公告)日：2000-04-25
申请号：US968151
申请日：1997-11-17
CPC分类号： G01N1/32 , Y10S134/902
摘要： A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow. The flow mist droplets are drawn from the flow onto the cooled wafer surface providing a thin layer of liquid aqueous HF which reacts with the oxide layer at a faster rate than previously used HF vapor.
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