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1.发明授权公开(公告)号：US06273992B1
公开(公告)日：2001-08-14
申请号：US09557356
申请日：2000-04-25
IPC分类号： H05H100
CPC分类号： G01N1/32 , Y10S134/902
摘要： A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow. The flow mist droplets are drawn from the flow onto the cooled wafer surface providing a thin layer of liquid aqueous HF which reacts with the oxide layer at a faster rate than previously used HF vapor.
摘要翻译： 描述了一种用于在硅晶片上分解氧化硅层的方法和装置，其采用将HF水的加热雾施加到冷却晶片表面。 该技术应用于使用扫描液滴对痕量杂质的硅晶片的分析，以在氧化硅分解后收集含有杂质的残余物。 与使用气相分解技术的现有技术相比，该新方法提供了氧化硅分解速率的一个数量级的增加。 此外，新颖的方法提供了比现有技术更好的控制和更安全地布置腐蚀性蒸气。 该装置包括装载有载气供应的活动圆顶和用于将由特殊设计的雾发生器产生的加热的HF水雾喷射到载气流中的装置。 流雾液滴从流中被抽吸到冷却的晶片表面上，提供与先前使用的HF蒸汽相比更快的速率与氧化物层反应的液体HF水溶液的薄层。
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2.发明授权公开(公告)号：US06475291B1
公开(公告)日：2002-11-05
申请号：US09557605
申请日：2000-04-25
IPC分类号： C23G102
CPC分类号： G01N1/32 , Y10S134/902
摘要： A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow. The flow mist droplets are drawn from the flow onto the cooled wafer surface providing a thin layer of liquid aqueous HF which reacts with the oxide layer at a faster rate than previously used HF vapor.
摘要翻译： 描述了一种用于在硅晶片上分解氧化硅层的方法和装置，其采用将HF水的加热雾施加到冷却晶片表面。 该技术应用于使用扫描液滴对痕量杂质的硅晶片的分析，以在氧化硅分解后收集含有杂质的残余物。 与使用气相分解技术的现有技术相比，该新方法提供了氧化硅分解速率的一个数量级的增加。 此外，新颖的方法提供了比现有技术更好的控制和更安全地布置腐蚀性蒸气。 该装置包括装载有载气供应的活动圆顶和用于将由特殊设计的雾发生器产生的加热的HF水雾喷射到载气流中的装置。 流雾液滴从流中被抽吸到冷却的晶片表面上，提供与先前使用的HF蒸汽相比更快的速率与氧化物层反应的液体HF水溶液的薄层。
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公开(公告)号：US6053984A
公开(公告)日：2000-04-25
申请号：US968151
申请日：1997-11-17
CPC分类号： G01N1/32 , Y10S134/902
摘要： A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow. The flow mist droplets are drawn from the flow onto the cooled wafer surface providing a thin layer of liquid aqueous HF which reacts with the oxide layer at a faster rate than previously used HF vapor.
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公开(公告)号：US5569328A
公开(公告)日：1996-10-29
申请号：US370318
申请日：1995-01-10
申请人： Steve I. Petvai , Michael P. Buet
发明人： Steve I. Petvai , Michael P. Buet
CPC分类号： G01R1/06705 , G01N1/02 , G01N35/0099 , Y10T436/255
摘要： The invention relates to a system for manufacturing semiconductor devices from silicon semiconductor wafers, comprising forming device operable forming a silicon semiconductor wafer, oxidizing device operable for forming an oxidation gate on the silicon semiconductor wafer and thereafter, a testing arrangement for testing the silicon semiconductor wafer for contaminants using a test drop; wherein the improvement comprises, rotating device operable for receiving the wafer and for rotating in one direction and the opposite direction at predetermined rates in response to first electrical signals; carrier device operable for being positioned on the silicon semiconductor wafer and for retaining at least a portion of the test drop in contact with the wafer during relative movements of the carrier device over the surface of the wafer while substantially eliminating direct contact between the carrier device and the wafer; radial moving device operable for moving the carrier device along a predetermined radial path relative any clockwise and counterclockwise rotation of the wafer in response to second electrical signals; first control device operable for generating the first electrical signals for causing the rotating device to rotate first in one direction and then in the opposite direction so that the resultant effect is an incremental rotation of the wafer; and second control device operable for generating second electrical signals for causing the radial moving device to move the carrier device incrementally radially so that the carrier device follows a path covering substantially all of a predetermined portion of the surface of the wafer.
摘要翻译： 本发明涉及一种用于从硅半导体晶片制造半导体器件的系统，包括可操作地形成硅半导体晶片的形成装置，可操作以在硅半导体晶片上形成氧化栅的氧化装置，此后，用于测试硅半导体晶片的测试装置 对于使用测试滴的污染物; 其中改进包括：响应于第一电信号，可操作以接收晶片并且以预定速率在一个方向和相反方向上旋转的旋转装置; 载体装置，其可操作用于定位在硅半导体晶片上，并且用于在载体装置在晶片表面上的相对运动期间保持与晶片接触的至少一部分测试液滴，同时基本上消除载体装置与载体装置之间的直接接触 晶圆; 径向移动装置，其可操作以响应于第二电信号相对于晶片的任何顺时针和逆时针旋转沿着预定的径向路径移动载体装置; 第一控制装置，其可操作用于产生用于使旋转装置首先在一个方向上然后在相反方向上旋转的第一电信号，使得所得到的效果是晶片的增量旋转; 以及第二控制装置，其可操作用于产生第二电信号，以使所述径向运动装置径向地逐渐移动所述载体装置，使得所述载体装置遵循覆盖所述晶片表面的基本上所有预定部分的路径。
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5.发明授权
公开(公告)号：US5481881A
公开(公告)日：1996-01-09
申请号：US364544
申请日：1994-12-27
申请人： Michael P. Buet , Steve I. Petvai
发明人： Michael P. Buet , Steve I. Petvai
CPC分类号： B01D47/06 , B01D5/0051 , B01D5/0081 , B01D53/1487
摘要： The invention relates to a system for removing an organic compound capable of forming a negative azeotrope mixture with water from a vapor stream using condensation, comprising a conducting system for providing a path for communicating the vapor stream into a condensation region; first sensing apparatus positioned in the path and operable for detecting and for evaluating the mass rate flow of the organic compound in the vapor stream flowing towards the condensation region; a second sensing apparatus positioned in the path operable for sensing the temperature in the condensation region; first supplying apparatus operable for supplying water in the form of a mist or vapor into the vapor stream; second supplying apparatus operable for supplying a hydrophobic agent into the vapor stream; third supplying apparatus operable for supplying air at a predetermined temperature into the vapor stream so that the temperature of the vapor stream is at a temperature at least above the lowest boiling point of the mixture of the organic compound and water; condensing apparatus positioned to contact the vapor stream in the condensation region with the added water and hydrophobic agent for condensing the vapor stream; and cooling apparatus coupled to the condensing apparatus and operable for maintaining the temperature difference between the condensing apparatus and the local vapor stream sufficient to induce substantial condensation of the vapor stream.
摘要翻译： 本发明涉及一种用于从冷凝水蒸汽流中除去能与水形成负共沸混合物的有机化合物的系统，该系统包括用于提供将蒸汽流连通到冷凝区域的路径的导电系统; 第一感测装置位于路径中并且可操作用于检测和评估朝向冷凝区域流动的蒸气流中的有机化合物的质量流量; 定位在可操作以感测冷凝区域中的温度的路径中的第二感测装置; 第一供应装置，其可操作以将蒸汽形式的水供应到蒸气流中; 第二供应装置，其可操作以将疏水剂供应到蒸气流中; 第三供应装置可操作以将预定温度的空气供应到蒸气流中，使得蒸气流的温度至少高于有机化合物和水的混合物的最低沸点的温度; 定位成使冷凝区域中的蒸汽流与加入的水和用于冷凝蒸气流的疏水剂接触的冷凝装置; 冷凝装置与冷凝装置连接并可操作以保持冷凝装置与局部蒸汽流之间的温差足以引起蒸气流的实质冷凝。
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6.发明授权Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield 失效四极杆 具有阳极/阴极屏蔽和浮动目标屏蔽的溅射系统
公开(公告)号：US4362611A
公开(公告)日：1982-12-07
申请号：US287452
申请日：1981-07-27
申请人： Joseph S. Logan , Steve I. Petvai , Cornel Rosu
发明人： Joseph S. Logan , Steve I. Petvai , Cornel Rosu
CPC分类号： H01J37/3438 , H01J37/34 , H01J2237/0206 , H01J2237/022
摘要： A quadrupole sputtering system having four electrodes comprised of a cathode, an anode, a cathode/anode shield and an electrically floating target shield circumscribing the source target of the cathode.
摘要翻译： 四极溅射系统具有由阴极，阳极，阴极/阳极屏蔽以及围绕阴极源极的电浮动靶屏蔽构成的四个电极。
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公开(公告)号：US4278493A
公开(公告)日：1981-07-14
申请号：US144461
申请日：1980-04-28
申请人： Steve I. Petvai
发明人： Steve I. Petvai
CPC分类号： C23G5/00 , B08B7/0035
摘要： A method for cleaning uneven substrate surfaces having channels, via holes or stepped surface topography. In accordance with the method, an electron beam device which generates a solid angle source of ions is provided. A substrate having an uneven surface topography is oriented in the path of the solid angle source of ion at a particular angle with reference to the center line of the ion beam source. While in the particular orientation with respect to the center line, the substrate is rotated about an axis normal to the plane of the substrate surface.
摘要翻译： 一种用于清洁具有通道，通孔或台阶表面形貌的不均匀衬底表面的方法。 根据该方法，提供了产生离子的立体角源的电子束装置。 相对于离子束源的中心线，具有不平坦表面形貌的基底在离子的立体角光源的路径中以特定角度取向。 在相对于中心线的特定取向中，基板围绕垂直于基板表面平面的轴旋转。
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公开(公告)号：US4248688A
公开(公告)日：1981-02-03
申请号：US71649
申请日：1979-09-04
IPC分类号： H01L21/302 , C23F4/00 , H01L21/263 , H01L21/3065 , H01L21/3213 , C23C15/00
CPC分类号： H01L21/2633 , H01L21/32131 , Y10S148/143
摘要： Metals such as platinum and palladium are preferentially removed in the presence of their metal silicides by ion milling in a noble gas atmosphere such as argon. The process can be used on semiconductor chips to remove excess platinum after platinum silicide has been formed in the contact holes.
摘要翻译： 金属如铂和钯在惰性气体气氛如氩气中通过离子研磨在金属硅化物的存在下被优先除去。 该方法可用于半导体芯片上以在接触孔中形成铂硅化物之后去除多余的铂。
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