公开(公告)号：US06423949B1

公开(公告)日：2002-07-23

申请号：US09314845

申请日：1999-05-19

申请人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

发明人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

IPC分类号： H05B368

CPC分类号： H01L21/67103

摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

公开(公告)号：US06646235B2

公开(公告)日：2003-11-11

申请号：US10037151

申请日：2001-10-19

申请人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

发明人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

IPC分类号： H05B368

CPC分类号： H01L21/67103

摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

公开(公告)号：US06645884B1

公开(公告)日：2003-11-11

申请号：US09350810

申请日：1999-07-09

申请人： Michael X. Yang ,  Chien-Teh Kao ,  Karl Littau ,  Steven A. Chen ,  Henry Ho ,  Ying Yu

发明人： Michael X. Yang ,  Chien-Teh Kao ,  Karl Littau ,  Steven A. Chen ,  Henry Ho ,  Ying Yu

IPC分类号： H01L2102

CPC分类号： C23C16/4412 ,  C23C16/345

摘要： The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

摘要翻译： 本发明提供了在半导体晶片上形成氮化硅层的方法和装置。 半导体晶片位于半导体处理室内的基座上。 将载气，氮源气体和硅源气体引入到半导体处理室中，并且将半导体晶片在室内的压力下暴露于大约100至500托的范围内的气体混合物。

公开(公告)号：US06530992B1

公开(公告)日：2003-03-11

申请号：US09350632

申请日：1999-07-09

申请人： Michael X. Yang ,  Henry Ho ,  Steven A. Chen

发明人： Michael X. Yang ,  Henry Ho ,  Steven A. Chen

IPC分类号： C23C1600

CPC分类号： H01L21/67017

摘要： Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.

摘要翻译： 在基板上形成膜的方法和装置，包括将预处理材料引入到足以形成膜作为处理室的内表面的一部分的处理室中，以阻止从该室的部分排气，将基板引入到 并在衬底上形成膜。

公开(公告)号：US07223323B2

公开(公告)日：2007-05-29

申请号：US10616284

申请日：2003-07-08

申请人： Michael X. Yang ,  Ming Xi ,  Russell C. Ellwanger ,  Eric B. Britcher ,  Bernardo Donoso ,  Lily L. Pang ,  Svetlana Sherman ,  Henry Ho ,  Anh N. Nguyen ,  Alexander N. Lerner ,  Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Tetsuya Ishikawa ,  Yevgeniy Rabinovich ,  Dmitry Lubomirsky ,  Yeuk-Fai Edwin Mok ,  Son T. Nguyen

发明人： Michael X. Yang ,  Ming Xi ,  Russell C. Ellwanger ,  Eric B. Britcher ,  Bernardo Donoso ,  Lily L. Pang ,  Svetlana Sherman ,  Henry Ho ,  Anh N. Nguyen ,  Alexander N. Lerner ,  Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Tetsuya Ishikawa ,  Yevgeniy Rabinovich ,  Dmitry Lubomirsky ,  Yeuk-Fai Edwin Mok ,  Son T. Nguyen

IPC分类号： C25B9/12 ,  C35D3/38 ,  B08B3/02

CPC分类号： H01L21/6719 ,  A23D7/00 ,  A23D7/005 ,  A23D7/01 ,  A23J7/00 ,  B08B3/02 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/02 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

摘要翻译： 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与 主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

公开(公告)号：US06734020B2

公开(公告)日：2004-05-11

申请号：US09800881

申请日：2001-03-07

申请人： Siqing Lu ,  Yu Chang ,  Dongxi Sun ,  Vinh Dang ,  Michael X. Yang ,  Anzhong Chang ,  Anh N. Nguyen ,  Ming Xi

发明人： Siqing Lu ,  Yu Chang ,  Dongxi Sun ,  Vinh Dang ,  Michael X. Yang ,  Anzhong Chang ,  Anh N. Nguyen ,  Ming Xi

IPC分类号： G01N3508

CPC分类号： G05D11/133 ,  Y10T436/104998 ,  Y10T436/12

摘要： A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.

摘要翻译： 用于半导体处理室的阀门控制系统包括系统控制计算机和与处理室相关联的多个电控阀。 该系统还包括与系统控制计算机通信并可操作地耦合到电控阀的可编程逻辑控制器。 控制阀的刷新时间可能小于10毫秒。 因此，阀门控制操作不会显着延长原子层沉积工艺中高度重复循环所需的时间。 可以通过可编程逻辑控制器的输出电源实现硬件互锁。

公开(公告)号：US07201803B2

公开(公告)日：2007-04-10

申请号：US10731651

申请日：2003-12-09

申请人： Siqing Lu ,  Yu Chang ,  Dongxi Sun ,  Vinh Dang ,  Michael X. Yang ,  Anzhong (Andrew) Chang ,  Anh N. Nguyen ,  Ming Xi

发明人： Siqing Lu ,  Yu Chang ,  Dongxi Sun ,  Vinh Dang ,  Michael X. Yang ,  Anzhong (Andrew) Chang ,  Anh N. Nguyen ,  Ming Xi

IPC分类号： B05C11/00

CPC分类号： G05D11/133 ,  Y10T436/104998 ,  Y10T436/12

摘要： A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.

摘要翻译： 用于半导体处理室的阀门控制系统包括系统控制计算机和与处理室相关联的多个电控阀。 该系统还包括与系统控制计算机通信并可操作地耦合到电控阀的可编程逻辑控制器。 控制阀的刷新时间可能小于10毫秒。 因此，阀门控制操作不会显着延长原子层沉积工艺中高度重复循环所需的时间。 可以通过可编程逻辑控制器的输出电源实现硬件互锁。

公开(公告)号：US08123881B2

公开(公告)日：2012-02-28

申请号：US12248204

申请日：2008-10-09

申请人： Damon K. Cox ,  Todd J. Egan ,  Michael X. Yang ,  Jeffrey C. Hudgens

发明人： Damon K. Cox ,  Todd J. Egan ,  Michael X. Yang ,  Jeffrey C. Hudgens

IPC分类号： B32B37/00

CPC分类号： H01L21/68 ,  H01L24/80 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T29/53091 ,  Y10T29/53174 ,  Y10T29/53178 ,  Y10T156/10 ,  Y10T156/1702

摘要： A method, a system and a computer readable medium having a set of instructions stored thereon for die-to-robot alignment for die-to-substrate bonding are described. First, a robot is aligned with a substrate to provide a pre-aligned robot. Next, a die is aligned with the pre-aligned robot to provide a robot-aligned die. Finally, the robot-aligned die is bonded to a region of the substrate. The substrate is held stationary immediately following the aligning of the robot with the substrate and at least until the robot-aligned die is bonded to the region of the substrate.

摘要翻译： 描述了一种方法，系统和计算机可读介质，其具有存储在其上的用于管芯到基板结合的管芯到机器人对准的一组指令。 首先，机器人与基板对准以提供预对准的机器人。 接下来，模具与预对准机器人对准以提供机器人对准的模具。 最后，将机器人对准的管芯结合到衬底的区域。 在机器人与基板对准之后，基板保持静止，并且至少直到机器人对准的管芯结合到基板的区域。

公开(公告)号：US20100311237A1

公开(公告)日：2010-12-09

申请号：US12846253

申请日：2010-07-29

申请人： Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

发明人： Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： C23C16/45553 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76844 ,  H01L21/76862

摘要： A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.

摘要翻译： 公开了一种在基片上形成材料的方法。 在一个实施例中，该方法包括在设置在等离子体处理室中的衬底上形成氮化钽层，通过将衬底顺序地暴露于钽前体和氮前体，然后通过暴露衬底来降低氮化钽层的氮浓度 等离子体退火工艺。 随后在氮化钽层上沉积含金属的层。

公开(公告)号：US07820026B2

公开(公告)日：2010-10-26

申请号：US11403566

申请日：2006-04-13

申请人： Hooman Hafezi ,  Aron Rosenfeld ,  Michael X. Yang

发明人： Hooman Hafezi ,  Aron Rosenfeld ,  Michael X. Yang

IPC分类号： C25D5/34

CPC分类号： H01L21/76868 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76873

摘要： Generally, the process includes depositing a barrier layer on a feature formed in a dielectric layer, decorating the barrier layer with a metal, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier layer formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

摘要翻译： 通常，该方法包括在形成在电介质层中的特征上沉积阻挡层，用金属装饰阻挡层，进行接枝过程，引发铜层，然后通过使用大块铜填充工艺来填充该特征。 根据本文描述的方面形成的铜特征对于形成在半导体衬底上的阻挡层具有期望的粘合性能，并且证明在形成在衬底上的制造器件中增强的电迁移和应力迁移。