利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

32 条记录 (耗时 0.025 秒)

    Optical system and method for detecting particles
    1.
    发明申请
    Optical system and method for detecting particles 审中-公开
    用于检测颗粒的光学系统和方法

    公开(公告)号：US20070097366A1

    公开(公告)日：2007-05-03

    申请号：US11262210

    申请日：2005-10-31

    申请人： Steven LeBoeuf ,  Alexei Vertiatchikh ,  Stanton Weaver ,  Radislav Potyrailo ,  Xian-An Cao

    发明人： Steven LeBoeuf ,  Alexei Vertiatchikh ,  Stanton Weaver ,  Radislav Potyrailo ,  Xian-An Cao

    IPC分类号： G01N21/00

    CPC分类号： G01N21/6486 ,  G01N21/15 ,  G01N21/532 ,  G01N21/645

    摘要： Embodiments of the invention include a particle detection system that includes a light emitting source, a non-collimating reflector, a collimating reflector, and a detector. Light from the light emitting source is directed by the non-collimating reflector to an area through which a particle stream may be transmitted. Fluorescent light from the light striking particles is redirected to the collimating reflector and then on to the detector. Other embodiments include a single pump used to pull a pair of fluid flows through the detection system. Other embodiments include a plurality of light emitting sources whose light is directed to a particle stream by a single reflector. Other embodiments include a method for detecting particles.

    摘要翻译： 本发明的实施例包括一种粒子检测系统，其包括发光源，非准直反射器，准直反射器和检测器。 来自发光源的光由非准直反射器引导到可以传播颗粒物流的区域。 来自光撞击颗粒的荧光被重定向到准直反射器，然后被引导到检测器上。 其他实施例包括用于拉动一对流体流过检测系统的单个泵。 其他实施例包括多个发光源，其光通过单个反射器被引导到颗粒流。 其他实施方案包括用于检测颗粒的方法。

    Flip-chip light emitting diode
    2.
    发明申请
    Flip-chip light emitting diode 失效
    倒装芯片发光二极管

    公开(公告)号：US20050087884A1

    公开(公告)日：2005-04-28

    申请号：US10693126

    申请日：2003-10-24

    申请人： Edward Stokes ,  Mark D'Evelyn ,  Stanton Weaver ,  Peter Sandvik ,  Abasifreke Ebong ,  Xian-an Cao ,  Steven LeBoeuf ,  Nikhil Taskar

    发明人： Edward Stokes ,  Mark D'Evelyn ,  Stanton Weaver ,  Peter Sandvik ,  Abasifreke Ebong ,  Xian-an Cao ,  Steven LeBoeuf ,  Nikhil Taskar

    IPC分类号： H01L23/48 ,  H01L33/38 ,  H01L33/40

    CPC分类号： H01L33/405 ,  H01L33/387 ,  H01L2933/0083

    摘要： A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).

    摘要翻译： 倒装芯片发光二极管管芯（10,10'，10“）包括透光衬底（12,12'，12”）和半导体层（14,14'，14“），其被选择性地图案化 以限定装置台面（30,30'，30“）。 反射电极（34,34'，34“）设置在器件台面（30,30'，30”）上。 反射电极（34,34'，34“）包括设置在器件台面（30,30'，30”）上方的透光绝缘栅极（42,42'，60,80），欧姆材料 44,44'，44“，62）设置在绝缘栅极（42,42'，60,80）的开口处并与器件台面（30,30'，30”）形成欧姆接触， 设置在绝缘栅极（42,42'，60,80）上的导电反射膜（46,46'，46“）和欧姆材料（44,44'，44”，62）。 导电反射膜（46,46'，46“）与欧姆材料（44,44'，44”，62）电连通。

    Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
    4.
    发明申请
    Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens 有权
    具有无定形含氟聚合物密封剂和透镜的发光二极管（LED）

    公开(公告)号：US20050006651A1

    公开(公告)日：2005-01-13

    申请号：US10609040

    申请日：2003-06-27

    申请人： Steven LeBoeuf ,  Donald Buckley ,  Stanton Weaver

    发明人： Steven LeBoeuf ,  Donald Buckley ,  Stanton Weaver

    IPC分类号： H01L33/50 ,  H01L27/15

    CPC分类号： H01L33/502 ,  H01L33/44 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/16225 ,  H05K1/0203 ,  H05K2201/10106

    摘要： A lens and encapsulant made of an amorphous fluoropolymer for a light-emitting diode (LED) or diode laser, such as an ultraviolet (UV) LED (UVLED). A semiconductor diode die (114) is formed by growing a diode (110) on a substrate layer (115) such as sapphire. The diode die (114) is flipped so that it emits light (160, 365) through the face (150) of the layer (115). An amorphous fluoropolymer encapsulant encapsulates the emitting face of the diode die (114), and may be shaped as a lens to form an integral encapsulant/lens. Or, a lens (230, 340) of amorphous fluoropolymer may be joined to the encapsulant (220). Additional joined or separate lenses (350) may also be used. The encapsulant/lens is transmissive to UV light as well as infrared light. Encapsulating methods are also provided.

    摘要翻译： 由用于发光二极管（LED）或二极管激光器（例如紫外线（UV）LED（UVLED））的无定形含氟聚合物制成的透镜和密封剂。 通过在诸如蓝宝石的衬底层（115）上生长二极管（110）来形成半导体二极管管芯（114）。 二极管管芯（114）被翻转，使得它通过层（115）的面（150）发光（160,365）。 无定形氟聚合物密封剂封装二极管管芯（114）的发射面，并且可以被成形为透镜以形成整体的密封剂/透镜。 或者，可以将无定形含氟聚合物的透镜（230,340）接合到密封剂（220）。 还可以使用附加的连接或分开的透镜（350）。 密封剂/透镜对于紫外线以及红外光是透射的。 还提供封装方法。

    UV emitting LED having mesa structure
    5.
    发明申请
    UV emitting LED having mesa structure 有权
    UV发光LED具有台面结构

    公开(公告)号：US20050264172A1

    公开(公告)日：2005-12-01

    申请号：US10854596

    申请日：2004-05-26

    申请人： Robert Wojnarowski ,  Stanton Weaver ,  Steven LeBoeuf

    发明人： Robert Wojnarowski ,  Stanton Weaver ,  Steven LeBoeuf

    IPC分类号： H01J1/62 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/08 ,  H01L33/24

    摘要： The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED. In an embodiment of the invention, the UV-LED is characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the LED's are provided with a rounded mesa configuration. In a specific embodiment, the p-type metal is positioned upon a rounded mesa, such as a parabolic mesa, formed out of the base structure materials.

    摘要翻译： 本发明涉及一种紫外线能量源，其中源是紫外线发射的LED。 在本发明的一个实施例中，UV-LED的特征在于包括衬底，p掺杂半导体材料，多量子阱，n掺杂半导体材料的基底材料，基底材料是p型金属 并且其中LED具有圆形台面构造。 在具体实施例中，p型金属位于由基底结构材料形成的圆形台面（例如抛物面台面）上。

    LED lighting system with reflective board
    10.
    发明申请
    LED lighting system with reflective board 有权
    LED照明系统带反光板

    公开(公告)号：US20070165402A1

    公开(公告)日：2007-07-19

    申请号：US11725410

    申请日：2007-03-19

    申请人： Stanton Weaver ,  Thomas Stecher

    发明人： Stanton Weaver ,  Thomas Stecher

    IPC分类号： F21V1/00

    CPC分类号： H05K1/181 ,  F21K9/00 ,  H01L25/0753 ,  H01L2924/0002 ,  H01S5/005 ,  H01S5/02216 ,  H01S5/02292 ,  H01S5/4025 ,  H05K1/0274 ,  H05K2201/0195 ,  H05K2201/0209 ,  H05K2201/2054 ,  Y02P70/611 ,  Y10S362/80 ,  H01L2924/00

    摘要： A light emitting apparatus (8) includes one or more light emitting chips (10) that are disposed on a printed circuit board (12) and emit light predominantly in a wavelength range between about 400 nanometers and about 470 nanometers. The printed circuit board includes: (i) an electrically insulating board (14); (ii) electrically conductive printed circuitry (20); and (iii) an electrically insulating solder mask (22) having vias (24) through which the one or more light emitting chips electrically contact the printed circuitry. The solder mask (22) has a reflectance of greater than 60% at least between about 400 nanometers and about 470 nanometers.

    摘要翻译： 发光装置（8）包括设置在印刷电路板（12）上的一个或多个发光芯片（10），并且发射主要在约400纳米至约470纳米的波长范围内。 印刷电路板包括：（i）电绝缘板（14）; （ii）导电印刷电路（20）; 和（iii）具有通孔（24）的电绝缘的焊接掩模（22），所述一个或多个发光芯片通过该通孔与印刷电路电接触。 焊料掩模（22）具有大于60％的反射率，至少在约400纳米和约470纳米之间。