公开(公告)号：US20130119308A1

公开(公告)日：2013-05-16

申请号：US13675890

申请日：2012-11-13

申请人： Nicholas J. Condon ,  Steven R. Bowman ,  Shawn P. O'Connor

发明人： Nicholas J. Condon ,  Steven R. Bowman ,  Shawn P. O'Connor

IPC分类号： C01D3/04

CPC分类号： C09K11/665 ,  C01D3/04 ,  C01G17/00 ,  C01G17/04 ,  C01P2002/72 ,  C01P2002/82 ,  C30B11/02 ,  C30B29/12

摘要： The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.

公开(公告)号：US20110206069A1

公开(公告)日：2011-08-25

申请号：US12964599

申请日：2010-12-09

申请人： Steven R. Bowman ,  Nicholas J. Condon ,  Shawn P. O'Connor

发明人： Steven R. Bowman ,  Nicholas J. Condon ,  Shawn P. O'Connor

IPC分类号： H01S3/11 ,  H01S3/093

CPC分类号： H01S3/11 ,  G01S17/08 ,  G01S17/88 ,  H01S3/0933 ,  H01S3/094 ,  H01S3/094053 ,  H01S3/1606 ,  H01S3/1643 ,  H01S3/1653 ,  H01S2303/00 ,  H04B10/503 ,  H04B10/80

摘要： A quasi-three level laser system having crystalline YAG or YLF doped with trivalent Dysprosium can be pumped with a laser diode in the UV, and produce a pulsed laser blue emission from the 4 F 9/2 energy level at 490 nm, a red emission at 660 nm, or a yellow emission at 570 nm. The system can operate at room temperature or be cooled. The system can include Q-switching. A suitable laser diode is GaN.

摘要翻译： 掺有三价镝的晶体YAG或YLF的准三电平激光系统可以用UV中的激光二极管泵浦，并且在490nm处产生来自4F 9/2能级的脉冲激光蓝色发射，红色发射 在660nm处，或在570nm处的黄色发射。 该系统可在室温下运行或冷却。 该系统可以包括Q切换。 合适的激光二极管是GaN。

公开(公告)号：US09068276B2

公开(公告)日：2015-06-30

申请号：US13049962

申请日：2011-03-17

申请人： Nicholas J. Condon ,  Steven R. Bowman ,  Shawn P. O'Connor

发明人： Nicholas J. Condon ,  Steven R. Bowman ,  Shawn P. O'Connor

IPC分类号： C30B11/02 ,  C30B29/12 ,  C30B11/00 ,  C30B11/14

CPC分类号： C30B29/12 ,  C30B11/002 ,  C30B11/14 ,  Y10T117/10 ,  Y10T117/1024

摘要： A method of growing a single crystal material using a device that includes a conical plug. The conical plug includes a first portion defining a first conical hole about an axis, the first conical hole having a first angle, and includes a second portion contiguous with the first portion and defining a second conical hole about the axis, the second conical hole having a second angle having the same sign as the first angle and being greater than the first angle. The device includes an upper tube comprising the conical plug fused therein and a seeding well plug. The device includes a lower tube including the seeding well plug fused therein. A single crystal KPb2Cl5 material is grown from the oriented single crystal KPb2Cl5 seed through the first conical hole and then the second conical hole and then with continuing growth in the upper tube.

摘要翻译： 使用包括锥形塞的装置生长单晶材料的方法。 锥形塞包括第一部分，其围绕轴线限定第一锥形孔，第一锥形孔具有第一角度，并且包括与第一部分相邻并且围绕轴线限定第二锥形孔的第二部分，第二锥形孔具有 具有与第一角度相同的符号并且大于第一角度的第二角度。 该装置包括一个上管，该上管包括熔融在其中的锥形插塞和一个播种井塞。 该装置包括下管，其包括在其中熔融的接种井塞。 单晶KPb2Cl5材料从取向的单晶KPb2Cl5种子通过第一锥形孔然后第二锥形孔然后在上管继续生长生长。

公开(公告)号：US08945418B2

公开(公告)日：2015-02-03

申请号：US13675890

申请日：2012-11-13

申请人： Nicholas J. Condon ,  Steven R. Bowman ,  Shawn P. O'Connor

发明人： Nicholas J. Condon ,  Steven R. Bowman ,  Shawn P. O'Connor

IPC分类号： C01D3/04 ,  C01G17/04 ,  C01G17/00

CPC分类号： C09K11/665 ,  C01D3/04 ,  C01G17/00 ,  C01G17/04 ,  C01P2002/72 ,  C01P2002/82 ,  C30B11/02 ,  C30B29/12

摘要： The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.

公开(公告)号：US07964158B1

公开(公告)日：2011-06-21

申请号：US11747564

申请日：2007-05-11

申请人： Nicholas J. Condon ,  Steven R. Bowman ,  Shawn P. O'Connor

发明人： Nicholas J. Condon ,  Steven R. Bowman ,  Shawn P. O'Connor

IPC分类号： B01D9/00

CPC分类号： C30B29/12 ,  C30B11/002 ,  C30B11/14 ,  Y10T117/10 ,  Y10T117/1024

摘要： A method and apparatus for growing a single crystal KPb2Cl5 material using a device including a plug including an axis. The plug includes a first portion defining a cylindrical hole about the axis. The plug includes a second portion defining a first conical hole about the axis. The first conical hole has a first angle. The plug includes a third portion defining a second conical hole about the axis. The second conical hole has a second angle opposite in sign relative to the first angle. The plug includes a fourth portion defining a third conical hole about the axis. The third conical hole has a third angle, the third angle having a same sign as the second angle and being greater than the second angle. The device further includes an ampoule including the plug fused therein.

摘要翻译： 一种用于使用包括包括轴的插头的装置来生长单晶KPb2Cl5材料的方法和装置。 塞子包括围绕轴线限定圆柱形孔的第一部分。 塞子包括围绕轴线限定第一锥形孔的第二部分。 第一锥形孔具有第一角度。 塞子包括围绕轴线限定第二锥形孔的第三部分。 第二锥形孔具有相对于第一角度相反的第二角度。 塞子包括围绕轴线限定第三锥形孔的第四部分。 第三锥形孔具有第三角度，第三角度具有与第二角度相同的符号并且大于第二角度。 该装置还包括一个安瓿，其中包括塞子。