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公开(公告)号：US06527920B1
公开(公告)日：2003-03-04
申请号：US09706272
申请日：2000-11-03
IPC分类号： C25B1500
摘要： An electroplating apparatus prevents anode-mediated degradation of electrolyte additives by creating a mechanism for maintaining separate anolyte and catholyte and preventing mixing thereof within a plating chamber. The separation is accomplished by interposing a porous chemical transport barrier between the anode and cathode. The transport barrier limits the chemical transport (via diffusion and/or convection) of all species but allows migration of ionic species (and hence passage of current) during application of sufficiently large electric fields within electrolyte.
摘要翻译： 电镀装置通过产生用于维持单独的阳极电解液和阴极电解液并防止其在电镀室内的混合的机构来防止阳极介导的电解质添加剂的降解。 分离是通过在阳极和阴极之间插入多孔化学传输屏障来实现的。 运输屏障限制了所有物种的化学传输（通过扩散和/或对流），但是在电解质中施加足够大的电场期间允许离子物质的迁移（因此电流的流动）。
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公开(公告)号：US06890416B1
公开(公告)日：2005-05-10
申请号：US10318497
申请日：2002-12-11
摘要： An electroplating apparatus prevents anode-mediated degradation of electrolyte additives by creating a mechanism for maintaining separate anolyte and catholyte and preventing mixing thereof within a plating chamber. The separation is accomplished by interposing a porous chemical transport barrier between the anode and cathode. The transport barrier limits the chemical transport (via diffusion and/or convection) of all species but allows migration of ionic species (and hence passage of current) during application of sufficiently large electric fields within electrolyte.
摘要翻译： 电镀装置通过产生用于维持单独的阳极电解液和阴极电解液并防止其在电镀室内的混合的机构来防止阳极介导的电解质添加剂的降解。 分离是通过在阳极和阴极之间插入多孔化学传输屏障来实现的。 运输屏障限制了所有物种的化学传输（通过扩散和/或对流），但是在电解质中施加足够大的电场期间允许离子物质的迁移（因此电流的流动）。
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公开(公告)号：US06800187B1
公开(公告)日：2004-10-05
申请号：US09927741
申请日：2001-08-10
IPC分类号： C25D500
CPC分类号： H01L21/2885 , C23C18/1619 , C23C18/1628 , C23C18/163 , C23C18/1669 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/004 , C25D17/008
摘要： An apparatus for engaging a work piece during plating facilitates electrolyte flow during a plating operation. The apparatus helps to control the plating solution fluid dynamics and electric field shape to keep the wafer's local plating environment uniform and bubble free. The apparatus holding the work piece in a manner that facilitates electrolyte circulation patterns in which the electrolyte flows from the center of the work piece plating surface, outward toward the edge of the edge of the work piece. The apparatus holds the work piece near the work piece edges and provides a flow path for electrolyte to flow outward away from the edges of the work piece plating surface. That flow path has a “snorkel” shape in which the outlet is higher than the inlet. In addition, the flow path may have a slot shape that spans much or all of the circumference of holding apparatus. It may be made from a material that resists deformation and corrosion such as certain ceramics.
摘要翻译： 在电镀期间接合工件的装置有助于在电镀操作期间的电解液流动。 该设备有助于控制电镀溶液流体动力学和电场形状，以保持晶片的局部电镀环境均匀且无气泡。 该装置以便于电解质循环图案的方式保持工件，其中电解质从工件电镀表面的中心向外朝向工件边缘的边缘流动。 该装置将工件保持在工件边缘附近，并且提供了电解液从工件电镀表面的边缘向外流动的流动路径。 该流路具有“浮潜”形状，其中出口高于入口。 此外，流路可以具有跨越保持装置的大部分或全部圆周的槽形状。 它可以由抵抗诸如某些陶瓷的变形和腐蚀的材料制成。
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公开(公告)号：US07097410B1
公开(公告)日：2006-08-29
申请号：US10379858
申请日：2003-03-04
申请人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
发明人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
CPC分类号： H01L21/2885 , C25D17/001 , Y10S414/135 , Y10S414/136
摘要： The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.
摘要翻译： 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。
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公开(公告)号：US07686927B1
公开(公告)日：2010-03-30
申请号：US11510048
申请日：2006-08-25
申请人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
发明人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
IPC分类号： C25D17/00
CPC分类号： H01L21/2885 , C25D17/001 , Y10S414/135 , Y10S414/136
摘要： The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.
摘要翻译： 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。
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公开(公告)号：US06755946B1
公开(公告)日：2004-06-29
申请号：US10010954
申请日：2001-11-30
IPC分类号： C25D1706
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/12
摘要： The present invention includes apparatus and methods for measuring impedance of a layer of deposited metal on a substrate and controlling deposition uniformity during electroplating. A first circuit delivers plating current to a metal layer on the substrate, and a second circuit, electrically isolated from the first, measures the impedance. Methods of the invention provide multi-point sheet resistance measurements before and during an electroplating process on a substrate. In a specific example, resistance is measured via a copper seed layer during electroplating.
摘要翻译： 本发明包括用于测量衬底上的沉积金属层的阻抗并控制电镀期间的沉积均匀性的装置和方法。 第一电路将电镀电流输送到衬底上的金属层，并且与第一电路电隔离的第二电路测量阻抗。 本发明的方法在基板上的电镀工艺之前和期间提供多点薄层电阻测量。 在具体实例中，电镀期间通过铜籽晶层测量电阻。
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7.发明授权Method and apparatus for uniform electroplating of thin metal seeded wafers using multiple segmented virtual anode sources 有权使用多分段虚拟阳极源均匀电镀薄金属晶种晶片的方法和装置公开(公告)号：US06773571B1
公开(公告)日：2004-08-10
申请号：US10154082
申请日：2002-05-22
申请人： Steven T. Mayer , Evan E. Patton , Brian Paul Blackman , Jonathan D. Reid , Thomas Anand Ponnuswamy , Harold D. Perry
发明人： Steven T. Mayer , Evan E. Patton , Brian Paul Blackman , Jonathan D. Reid , Thomas Anand Ponnuswamy , Harold D. Perry
IPC分类号： C25D500
CPC分类号： C25D7/123 , C25D17/001 , C25D17/12
摘要： The present invention pertains to methods and apparatus for electroplating a substantially uniform layer of a metal onto a work piece having a seed layer thereon. The total current of a plating cell is distributed among a plurality of anodes in the plating cell in order to tailor the current distribution in the plating electrolyte to compensate for resistance and voltage variation across a work piece due to the seed layer. Focusing elements are used to create “virtual anodes” in proximity to the plating surface of the work piece to further control the current distribution in the electrolyte during plating.
摘要翻译： 本发明涉及用于将基本上均匀的金属层电镀到其上具有种子层的工件上的方法和装置。 电镀单元的总电流分布在电镀单元中的多个阳极之间，以便调整电镀电解质中的电流分布，以补偿因种子层而导致的工件上的电阻和电压变化。 聚焦元件用于在工件的电镀表面附近创建“虚拟阳极”，以进一步控制电镀期间电解液中的电流分布。
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公开(公告)号：US06551487B1
公开(公告)日：2003-04-22
申请号：US09872341
申请日：2001-05-31
申请人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind
发明人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind
IPC分类号： C25D500
CPC分类号： H01L21/2885 , C25D17/001 , Y10S414/135 , Y10S414/136
摘要： The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.
摘要翻译： 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。
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公开(公告)号：US20120279864A1
公开(公告)日：2012-11-08
申请号：US13286103
申请日：2011-10-31
CPC分类号： C25D3/02 , C25D3/38 , C25D5/022 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.
摘要翻译： 描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。 阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。 还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。 还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。
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公开(公告)号：US06946065B1
公开(公告)日：2005-09-20
申请号：US09716016
申请日：2000-11-16
IPC分类号： C25D3/38 , C25D5/18 , H05K3/42 , H01L21/768
CPC分类号： C25D3/02 , C25D3/38 , C25D5/022 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.
摘要翻译： 描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。 阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。 还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。 还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。
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