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    Method of BARC removal in semiconductor device manufacturing
    3.
    发明授权
    Method of BARC removal in semiconductor device manufacturing 有权
    半导体器件制造中BARC去除的方法

    公开(公告)号：US08530356B2

    公开(公告)日：2013-09-10

    申请号：US13317084

    申请日：2011-10-07

    Applicant: Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

    Inventor： Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

    IPC: H01L21/302

    CPC classification number: H01L21/76808 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/31144

    Abstract: A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.

    Abstract translation: 从多孔低k电介质材料的表面去除含有高分子量有机物的硬掩模或BARC的方法，其中在施加该方法之后低k电介质材料的介电常数的变化小于约5％ 。 该方法包括将包含有机物的硬掩模或BARC暴露于含有至少68质量％HNO 3的硝酸蒸气。

    MAGNETIC NANOPARTICLES FOR TCO REPLACEMENT
    6.
    发明申请
    MAGNETIC NANOPARTICLES FOR TCO REPLACEMENT 审中-公开
    用于替代TCO的磁性纳米粒子

    公开(公告)号：US20100101830A1

    公开(公告)日：2010-04-29

    申请号：US12419178

    申请日：2009-04-06

    Applicant: OMKARAM NALAMASU ,  Steven Verhaverbeke

    Inventor： OMKARAM NALAMASU ,  Steven Verhaverbeke

    IPC: H01B5/00 ,  B05D5/12

    CPC classification number: H01L31/022425 ,  B82Y25/00 ,  H01B1/02 ,  H01B1/08 ,  H01B1/22 ,  H01F1/0054 ,  H01F1/0063 ,  H01J9/02 ,  H01J17/04 ,  H01J2211/225 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1884 ,  H01L51/5203 ,  Y02E10/50

    Abstract: This invention provides an optically transparent conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanoparticles in a plane, the nanoparticles being aligned in strings, the strings being roughly parallel to each other and configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of magnetic nanoparticles allows for substantial optical transparency of the conductive layer. Furthermore, the conductive layer can include an optically transparent continuous conductive film, wherein the multiplicity of magnetic nanoparticles are electrically connected to the continuous conductive film. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of magnetic conductive nanoparticles on the substrate and applying a magnetic field to form the nanoparticles into a plurality of conductive pathways parallel to the surface of the substrate.

    Abstract translation: 本发明提供了具有低电薄片电阻和良好的光学透明度的期望组合的光学透明导电层。 导电层在平面中包含多个磁性纳米颗粒，纳米颗粒在串中对准，所述串彼此大致平行并且被配置成提供多个连续导电路径，并且其中多个磁性纳米颗粒的密度允许 用于导电层的实质光学透明度。 此外，导电层可以包括光学透明的连续导电膜，其中多个磁性纳米颗粒电连接到连续导电膜。 在衬底上形成导电层的方法包括：在衬底上沉积多个导电纳米颗粒并施加磁场以将纳米颗粒形成平行于衬底表面的多个导电通路。

    Post-ion implant cleaning for silicon on insulator substrate preparation
    7.
    发明授权
    Post-ion implant cleaning for silicon on insulator substrate preparation 失效
    用于硅绝缘体衬底制备的离子后植入物清洁

    公开(公告)号：US07432177B2

    公开(公告)日：2008-10-07

    申请号：US11154211

    申请日：2005-06-15

    Applicant: James S. Papanu ,  Han-Wen Chen ,  Brian J. Brown ,  Steven Verhaverbeke

    Inventor： James S. Papanu ,  Han-Wen Chen ,  Brian J. Brown ,  Steven Verhaverbeke

    IPC: H01L21/04

    CPC classification number: H01L21/02057 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/928

    Abstract: A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

    Abstract translation: 干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。 晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。 在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。 清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。 湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

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