公开(公告)号：US07872276B2

公开(公告)日：2011-01-18

申请号：US11742818

申请日：2007-05-01

申请人： Su Yeol Lee ,  Bang Won Oh ,  Doo Go Baik ,  Tae Sung Jang ,  Jong Gun Woo ,  Seok Beom Choi ,  Sang Ho Yoon ,  Dong Woo Kim ,  In Tae Yeo

发明人： Su Yeol Lee ,  Bang Won Oh ,  Doo Go Baik ,  Tae Sung Jang ,  Jong Gun Woo ,  Seok Beom Choi ,  Sang Ho Yoon ,  Dong Woo Kim ,  In Tae Yeo

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

摘要翻译： 制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

公开(公告)号：US07791100B2

公开(公告)日：2010-09-07

申请号：US11602285

申请日：2006-11-21

申请人： Su Yeol Lee ,  Dong Woo Kim ,  Seok Beom Choi ,  Tae Jun Kim

发明人： Su Yeol Lee ,  Dong Woo Kim ,  Seok Beom Choi ,  Tae Jun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/38

摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.

摘要翻译： 垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。 发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。

公开(公告)号：US20070228388A1

公开(公告)日：2007-10-04

申请号：US11651023

申请日：2007-01-09

申请人： Kun Yon Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

发明人： Kun Yon Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.

摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

公开(公告)号：US07531841B2

公开(公告)日：2009-05-12

申请号：US11651023

申请日：2007-01-09

申请人： Kun Yoo Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

发明人： Kun Yoo Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

IPC分类号： H01L27/15

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.

摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

公开(公告)号：US07727787B2

公开(公告)日：2010-06-01

申请号：US11976791

申请日：2007-10-29

申请人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

发明人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC分类号： H01L21/304

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32

摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20080105889A1

公开(公告)日：2008-05-08

申请号：US11976791

申请日：2007-10-29

申请人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

发明人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32

摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20100193823A1

公开(公告)日：2010-08-05

申请号：US12756528

申请日：2010-04-08

申请人： Tae Jun KIM ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

发明人： Tae Jun KIM ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC分类号： H01L33/44

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32

摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US08124997B2

公开(公告)日：2012-02-28

申请号：US12756528

申请日：2010-04-08

申请人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

发明人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC分类号： H01L31/0232

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32

摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US09749666B2

公开(公告)日：2017-08-29

申请号：US13204765

申请日：2011-08-08

申请人： Dong Woo Kim

发明人： Dong Woo Kim

IPC分类号： H04N21/235 ,  H04N21/236 ,  H04N21/2362 ,  H04N21/2365 ,  H04N21/2385 ,  H04N21/43 ,  H04N21/435 ,  H04N21/434 ,  H04N5/38 ,  H04N5/40 ,  H04N5/44 ,  H04N21/41 ,  H04N21/426

CPC分类号： H04N21/236 ,  H04N5/38 ,  H04N5/40 ,  H04N5/44 ,  H04N21/235 ,  H04N21/23614 ,  H04N21/2362 ,  H04N21/2365 ,  H04N21/2385 ,  H04N21/4122 ,  H04N21/42607 ,  H04N21/4263 ,  H04N21/43 ,  H04N21/4348

摘要： A display apparatus is provided, which includes a display panel, and a display driving apparatus mounted on the display panel and driving the display panel, which includes an RF modem having a first tuner for providing a broadcasting signal to the display panel.

公开(公告)号：US20130273466A1

公开(公告)日：2013-10-17

申请号：US13996857

申请日：2011-12-21

申请人： Dae Woong Choi ,  Jae Bum Park ,  Dong Woo Kim ,  Young Jae Kwon

发明人： Dae Woong Choi ,  Jae Bum Park ,  Dong Woo Kim ,  Young Jae Kwon

IPC分类号： G03G9/00 ,  G03G15/08

CPC分类号： G03G9/0827 ,  G03G9/0819

摘要： Provided is a toner particle having excellent environmental resistance, fluidity, and chargeability for developing an electrostatic image. The toner particle comprises a coupling resin, a release agent, and a coloring agent, and satisfies Formula (1) below: 8.5≦SMF≦10.5  (1), wherein the surface morphology factor (SMF) of the formula can be represented by following Formula (2): SMF=−log(4/3×π×D3×RD×B×C) [m2/ea]  (2).

摘要翻译： 提供了一种具有优异的耐环境性，流动性和用于显影静电图像的带电性的调色剂颗粒。 调色剂颗粒包括偶联树脂，脱模剂和着色剂，并且满足下式（1）：8.5 @ SMF @ 10.5（1），其中式的表面形态因子（SMF）可以由下式表示： 公式（2）：SMF = -log（4/3×pi×D3×RD×B×C）[m2 / ea]（2）。