公开(公告)号：US09236532B2

公开(公告)日：2016-01-12

申请号：US13330327

申请日：2011-12-19

申请人： Sum Geun Lee ,  Jin Cheol Shin ,  Yeo Jin Yoon

发明人： Sum Geun Lee ,  Jin Cheol Shin ,  Yeo Jin Yoon

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/20 ,  H01L33/44

CPC分类号： H01L33/387 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected in parallel to each other. Each first light emitting cell and second light emitting cell has a semiconductor stack that includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. At least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor layer, and at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor layer. The first light emitting cells are connected in series to the second light emitting cells.

摘要翻译： 本发明涉及发光二极管。 根据本发明的示例性实施例的发光二极管包括：第一组，其包括彼此并联连接的多个第一发光单元;以及第二组，包括与每个并联连接的多个第二发光单元 其他。 每个第一发光单元和第二发光单元具有包括第一导电型半导体层，第二导电型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层的半导体堆叠， 型半导体层。 第一发光单元的至少两个发光单元共享第一导电型半导体层，并且第二发光单元的至少两个发光单元共享第一导电型半导体层。 第一发光单元与第二发光单元串联连接。

公开(公告)号：US08963178B2

公开(公告)日：2015-02-24

申请号：US13023876

申请日：2011-02-09

申请人： Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee

发明人： Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee

IPC分类号： H01L33/00 ,  H01L33/46 ,  H01L27/15

CPC分类号： H01L27/153 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

摘要： Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

摘要翻译： 本发明的示例性实施例公开了一种包括具有第一表面和第二表面的基板的发光二极管芯片，布置在基板的第一表面上的发光结构，并且包括布置在第一导电类型半导体层 以及第二导电型半导体层，布置在基板的第二表面上的分布式布拉格反射器，用于反射从发光结构发射的光的分布式布拉格反射器和布置在分布式布拉格反射器上的金属层，其中分布式布拉格反射器 布拉格反射体对于蓝色波长范围内的第一波长的光，绿色波长范围的第二波长的光和红色波长范围的第三波长的光具有至少90％的反射率。

公开(公告)号：US20120080695A1

公开(公告)日：2012-04-05

申请号：US13080116

申请日：2011-04-05

申请人： Sum Geun Lee ,  Jin Cheol Shin ,  Jong Kyu Kim ,  Chang Youn Kim

发明人： Sum Geun Lee ,  Jin Cheol Shin ,  Jong Kyu Kim ,  Chang Youn Kim

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L27/156 ,  H01L33/08 ,  H01L33/38 ,  H01L33/46

摘要： Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.

摘要翻译： 本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽 多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和 连接器。 连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。

公开(公告)号：US08383433B2

公开(公告)日：2013-02-26

申请号：US13080116

申请日：2011-04-05

申请人： Sum Geun Lee ,  Jin Cheol Shin ,  Jong Kyu Kim ,  Chang Youn Kim

发明人： Sum Geun Lee ,  Jin Cheol Shin ,  Jong Kyu Kim ,  Chang Youn Kim

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/60 ,  H01L27/156 ,  H01L33/08 ,  H01L33/38 ,  H01L33/46

摘要： Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.

摘要翻译： 本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽 多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和 连接器。 连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。

公开(公告)号：US08314440B2

公开(公告)日：2012-11-20

申请号：US13073522

申请日：2011-03-28

申请人： Min Chan Heo ,  Sang Ki Jin ,  Jong Kyu Kim ,  Jin Cheol Shin ,  So Ra Lee ,  Sum Geun Lee

发明人： Min Chan Heo ,  Sang Ki Jin ,  Jong Kyu Kim ,  Jin Cheol Shin ,  So Ra Lee ,  Sum Geun Lee

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/46 ,  H01L33/08 ,  H01L33/20 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00

摘要： Exemplary embodiments of the present invention provide light emitting diode (LED) chips and a method of fabricating the same. An LED chip according to an exemplary embodiment includes a substrate; a light emitting structure arranged on the substrate, and an alternating lamination bottom structure arranged under the substrate. The alternating lamination bottom structure includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index.

摘要翻译： 本发明的示例性实施例提供了发光二极管（LED）芯片及其制造方法。 根据示例性实施例的LED芯片包括基板; 布置在基板上的发光结构，以及布置在基板下方的交替叠层底部结构。 所述交替叠层底部结构包括多个电介质对，所述电介质对中的每一个包括具有第一折射率的第一材料层和具有第二折射率的第二材料层，所述第一折射率大于所述第二折射率。

公开(公告)号：US08907360B2

公开(公告)日：2014-12-09

申请号：US12917937

申请日：2010-11-02

申请人： Chung Hoon Lee ,  Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee

发明人： Chung Hoon Lee ,  Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee

IPC分类号： H01L33/00 ,  H01L33/46 ,  H01L33/60

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

摘要翻译： 本发明的一个示例性实施例公开了一种发光二极管芯片，其包括基板，布置在基板上的发光结构，发光结构包括布置在第一导电型半导体层和第二导电型半导体之间的有源层 层和分布布拉格反射器以反射从发光结构发射的光。 分布布拉格反射器对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90％的反射率。

公开(公告)号：US09847371B2

公开(公告)日：2017-12-19

申请号：US13146073

申请日：2010-02-12

申请人： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

发明人： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

IPC分类号： H01L27/15 ,  H01L33/62 ,  H01L33/50 ,  H05B33/08

CPC分类号： H01L27/153 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H05B33/0821 ,  H01L2924/00014

摘要： A light emitting diode (LED) chip for high voltage operation and an LED package including the same are disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.

公开(公告)号：US20110284884A1

公开(公告)日：2011-11-24

申请号：US13146073

申请日：2010-02-12

申请人： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

发明人： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

IPC分类号： H01L33/62 ,  H01L33/50

CPC分类号： H01L27/153 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H05B33/0821 ,  H01L2924/00014

摘要： A light emitting diode (LED) chip for high voltage operation and an LED package including the same arc disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.

摘要翻译： 一种用于高电压操作的发光二极管（LED）芯片和包含相同电弧的LED封装。 LED芯片包括基板，形成在基板上并包括串联连接的n个发光单元的第一阵列和形成在基板上的第二阵列，并且包括串联连接的m（m和n个; n）个发光单元。 在LED芯片的操作期间，第一阵列和第二阵列通过彼此反向并联连接来操作。 此外，当第一阵列的驱动电压被定义为Vd1并且第二阵列的驱动电压被定义为Vd2时，Vd1和Vd2×（n / m）之间的差不大于2V。

公开(公告)号：US08791483B2

公开(公告)日：2014-07-29

申请号：US13077254

申请日：2011-03-31

申请人： Kyung Hee Ye ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

发明人： Kyung Hee Ye ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

摘要翻译： 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。

公开(公告)号：US06795287B2

公开(公告)日：2004-09-21

申请号：US10342487

申请日：2003-01-15

申请人： Chan Ki Kim ,  Hong Woo Ryu ,  Jin Yang No ,  Bo Soon An ,  Seok Jin Lee ,  Jin Cheol Shin

发明人： Chan Ki Kim ,  Hong Woo Ryu ,  Jin Yang No ,  Bo Soon An ,  Seok Jin Lee ,  Jin Cheol Shin

IPC分类号： H02H1100

CPC分类号： H02P9/105

摘要： A static excitation system that can eliminate shaft vibrations of a generator and overvoltage when it is underexited is provided. The static excitation system includes an initial excitation equipment; a step-down transformer; a 3-phase diode bridge; a boost chopper provided with a transistor and a resister, and maintaining DC voltage to be constant; a DC chopper provided with a plurality of transistors and diodes, and supplying DC power to a rotor of a generator; a boost controller for controlling the boost chopper; and a DC chopper controller for controlling the DC chopper, wherein, overvoltage applied on the excitation system when underexcited is eliminated owing to the boost chopper preventing any changes at an output terminal of the generator from being transferred to the excitation system, and maintaining the excitation DC voltage to be constant; and also owing to the DC chopper which is capable of 4 quadrant operation, hereby pole slipping of the generator can be prevented.

摘要翻译： 提供了一种能够消除发生器的轴振动并且在其不足时会产生过电压的静态励磁系统。 静态励磁系统包括初始励磁设备; 降压变压器; 三相二极管桥; 提供有晶体管和电阻器的升压斩波器，并且保持DC电压恒定; 设置有多个晶体管和二极管的直流斩波器，向发电机的转子供给直流电力; 用于控制升压斩波器的升压控制器; 以及用于控制直流斩波器的直流斩波控制器，其中，由于升压斩波器消除了由于升压斩波器而在激励系统上施加的过电压，从而防止发电机的输出端子上的任何变化被传送到励磁系统，并保持励磁 直流电压恒定; 并且由于能够进行4象限操作的直流斩波器，因此可以防止发电机的极滑动。