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公开(公告)号：US09236532B2
公开(公告)日：2016-01-12
申请号：US13330327
申请日：2011-12-19
申请人： Sum Geun Lee , Jin Cheol Shin , Yeo Jin Yoon
发明人： Sum Geun Lee , Jin Cheol Shin , Yeo Jin Yoon
CPC分类号： H01L33/387 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected in parallel to each other. Each first light emitting cell and second light emitting cell has a semiconductor stack that includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. At least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor layer, and at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor layer. The first light emitting cells are connected in series to the second light emitting cells.
摘要翻译： 本发明涉及发光二极管。 根据本发明的示例性实施例的发光二极管包括：第一组，其包括彼此并联连接的多个第一发光单元;以及第二组，包括与每个并联连接的多个第二发光单元 其他。 每个第一发光单元和第二发光单元具有包括第一导电型半导体层，第二导电型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层的半导体堆叠， 型半导体层。 第一发光单元的至少两个发光单元共享第一导电型半导体层，并且第二发光单元的至少两个发光单元共享第一导电型半导体层。 第一发光单元与第二发光单元串联连接。
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2.发明授权Light emitting diode chip having distributed bragg reflector and method of fabricating the same 有权具有分布式布拉格反射体的发光二极管芯片及其制造方法公开(公告)号：US08963178B2
公开(公告)日：2015-02-24
申请号：US13023876
申请日：2011-02-09
申请人： Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
发明人： Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
CPC分类号： H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
摘要： Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
摘要翻译： 本发明的示例性实施例公开了一种包括具有第一表面和第二表面的基板的发光二极管芯片，布置在基板的第一表面上的发光结构，并且包括布置在第一导电类型半导体层 以及第二导电型半导体层，布置在基板的第二表面上的分布式布拉格反射器，用于反射从发光结构发射的光的分布式布拉格反射器和布置在分布式布拉格反射器上的金属层，其中分布式布拉格反射器 布拉格反射体对于蓝色波长范围内的第一波长的光，绿色波长范围的第二波长的光和红色波长范围的第三波长的光具有至少90％的反射率。
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公开(公告)号：US20120080695A1
公开(公告)日：2012-04-05
申请号：US13080116
申请日：2011-04-05
申请人： Sum Geun Lee , Jin Cheol Shin , Jong Kyu Kim , Chang Youn Kim
发明人： Sum Geun Lee , Jin Cheol Shin , Jong Kyu Kim , Chang Youn Kim
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L27/156 , H01L33/08 , H01L33/38 , H01L33/46
摘要： Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.
摘要翻译： 本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽 多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和 连接器。 连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。
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公开(公告)号：US08383433B2
公开(公告)日：2013-02-26
申请号：US13080116
申请日：2011-04-05
申请人： Sum Geun Lee , Jin Cheol Shin , Jong Kyu Kim , Chang Youn Kim
发明人： Sum Geun Lee , Jin Cheol Shin , Jong Kyu Kim , Chang Youn Kim
CPC分类号： H01L33/60 , H01L27/156 , H01L33/08 , H01L33/38 , H01L33/46
摘要： Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.
摘要翻译： 本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽 多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和 连接器。 连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。
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公开(公告)号：US08314440B2
公开(公告)日：2012-11-20
申请号：US13073522
申请日：2011-03-28
申请人： Min Chan Heo , Sang Ki Jin , Jong Kyu Kim , Jin Cheol Shin , So Ra Lee , Sum Geun Lee
发明人： Min Chan Heo , Sang Ki Jin , Jong Kyu Kim , Jin Cheol Shin , So Ra Lee , Sum Geun Lee
CPC分类号： H01L33/46 , H01L33/08 , H01L33/20 , H01L33/50 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
摘要： Exemplary embodiments of the present invention provide light emitting diode (LED) chips and a method of fabricating the same. An LED chip according to an exemplary embodiment includes a substrate; a light emitting structure arranged on the substrate, and an alternating lamination bottom structure arranged under the substrate. The alternating lamination bottom structure includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index.
摘要翻译： 本发明的示例性实施例提供了发光二极管（LED）芯片及其制造方法。 根据示例性实施例的LED芯片包括基板; 布置在基板上的发光结构，以及布置在基板下方的交替叠层底部结构。 所述交替叠层底部结构包括多个电介质对，所述电介质对中的每一个包括具有第一折射率的第一材料层和具有第二折射率的第二材料层，所述第一折射率大于所述第二折射率。
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6.发明授权Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector 有权具有分布式布拉格反射体的发光二极管芯片及其制造方法以及具有分布式布拉格反射器的发光二极管封装公开(公告)号：US08907360B2
公开(公告)日：2014-12-09
申请号：US12917937
申请日：2010-11-02
申请人： Chung Hoon Lee , Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
发明人： Chung Hoon Lee , Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
摘要翻译： 本发明的一个示例性实施例公开了一种发光二极管芯片，其包括基板，布置在基板上的发光结构，发光结构包括布置在第一导电型半导体层和第二导电型半导体之间的有源层 层和分布布拉格反射器以反射从发光结构发射的光。 分布布拉格反射器对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90％的反射率。
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公开(公告)号：US08258533B2
公开(公告)日：2012-09-04
申请号：US12950676
申请日：2010-11-19
申请人： Won Cheol Seo , Sum Geun Lee
发明人： Won Cheol Seo , Sum Geun Lee
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2224/73265 , H01L2224/92247
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.
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公开(公告)号：US20110222285A1
公开(公告)日：2011-09-15
申请号：US13009284
申请日：2011-01-19
申请人： Kyung Hee YE , Dae Sung Kal , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
发明人： Kyung Hee YE , Dae Sung Kal , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
IPC分类号： F21S4/00
CPC分类号： H01L33/08 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H05B33/0821 , H01L2924/00
摘要： The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units. The half-wave light emitting units and the full-wave light emitting units each have at least one light emitting cell, the half-wave light emitting units each have a first terminal and a second terminal, the full-wave light emitting units each have a third terminal having the same polarity as the first terminal and a fourth terminal having the same polarity as the second terminal, and the third terminal of each full-wave light emitting unit being connected to the second terminal of adjacent half-wave light emitting units and the fourth terminal of each half-wave light emitting unit being connected to the first terminal of adjacent half-wave light emitting units.
摘要翻译： 本发明涉及一种包括至少三对半波发光单元的发光器件，每一对包括连接到第二半波发光单元的端子的第一半波发光单元的端子， 具有相同极性的端子，一个半波发光单元对的连接端子的极性与相邻半波发光单元的连接端子的极性相反。 发光器件还包括至少两个全波发光单元，每个全波发光单元各自连接到相邻的半波发光单元对。 半波发光单元和全波发光单元各自具有至少一个发光单元，半波发光单元各自具有第一端子和第二端子，全波发光单元各自具有 具有与第一端子极性相同的第三端子和与第二端子具有相同极性的第四端子，并且每个全波发光单元的第三端子连接到相邻半波发射单元的第二端子 并且每个半波发光单元的第四端子连接到相邻的半波发光单元的第一端子。
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公开(公告)号：US09252326B2
公开(公告)日：2016-02-02
申请号：US13009284
申请日：2011-01-19
申请人： Kyung Hee Ye , Dae Sung Cho , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
发明人： Kyung Hee Ye , Dae Sung Cho , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
CPC分类号： H01L33/08 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H05B33/0821 , H01L2924/00
摘要： The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units. The half-wave light emitting units and the full-wave light emitting units each have at least one light emitting cell, the half-wave light emitting units each have a first terminal and a second terminal, the full-wave light emitting units each have a third terminal having the same polarity as the first terminal and a fourth terminal having the same polarity as the second terminal, and the third terminal of each full-wave light emitting unit being connected to the second terminal of adjacent half-wave light emitting units and the fourth terminal of each half-wave light emitting unit being connected to the first terminal of adjacent half-wave light emitting units.
摘要翻译： 本发明涉及一种包括至少三对半波发光单元的发光器件，每一对包括连接到第二半波发光单元的端子的第一半波发光单元的端子， 具有相同极性的端子，一个半波发光单元对的连接端子的极性与相邻半波发光单元的连接端子的极性相反。 发光器件还包括至少两个全波发光单元，每个全波发光单元各自连接到相邻的半波发光单元对。 半波发光单元和全波发光单元各自具有至少一个发光单元，半波发光单元各自具有第一端子和第二端子，全波发光单元各自具有 具有与第一端子极性相同的第三端子和与第二端子具有相同极性的第四端子，并且每个全波发光单元的第三端子连接到相邻半波发射单元的第二端子 并且每个半波发光单元的第四端子连接到相邻的半波发光单元的第一端子。
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公开(公告)号：US09202972B2
公开(公告)日：2015-12-01
申请号：US13009284
申请日：2011-01-19
申请人： Kyung Hee Ye , Dae Sung Cho , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
发明人： Kyung Hee Ye , Dae Sung Cho , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
摘要： The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units. The half-wave light emitting units and the full-wave light emitting units each have at least one light emitting cell, the half-wave light emitting units each have a first terminal and a second terminal, the full-wave light emitting units each have a third terminal having the same polarity as the first terminal and a fourth terminal having the same polarity as the second terminal, and the third terminal of each full-wave light emitting unit being connected to the second terminal of adjacent half-wave light emitting units and the fourth terminal of each half-wave light emitting unit being connected to the first terminal of adjacent half-wave light emitting units.
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