AC light emitting diode having full-wave light emitting cell and half-wave light emitting cell
    4.
    发明授权
    AC light emitting diode having full-wave light emitting cell and half-wave light emitting cell 有权
    交流发光二极管具有全波发光单元和半波发光单元

    公开(公告)号:US08354680B2

    公开(公告)日:2013-01-15

    申请号:US12882406

    申请日:2010-09-15

    IPC分类号: H01L33/00

    摘要: The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other. The cathode terminal shared by the pair of light emitting cells in the third row is electrically connected to the anode terminal of a corresponding light emitting cell of the half-wave light emitting cells in the first row through a conductor that is electrically insulated from the full-wave light emitting cells in the second row.

    摘要翻译: 本发明公开了一种具有半波发光单元和全波发光单元的交流(AC)发光二极管(LED)。 AC LED具有电连接在单个基板上的焊盘之间的多个发光单元。 AC LED包括具有阳极端子和阴极端子的第一排半波发光单元,具有阳极端子和阴极端子的第二排全波发光单元,以及第三排半波发光单元 每个具有阳极端子和阴极端子的发光单元。 在AC LED中,第二行布置在第一行和第三行之间,第三行包括彼此共享阴极端子的一对发光单元。 由第三行中的一对发光单元共享的阴极端子通过与整体电绝缘的导体电连接到第一行中的半波发光单元的对应的发光单元的阳极端子 - 第二排发光单元。

    Light emitting diode and method of fabricating the same
    5.
    发明授权
    Light emitting diode and method of fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号:US08383433B2

    公开(公告)日:2013-02-26

    申请号:US13080116

    申请日:2011-04-05

    IPC分类号: H01L21/00 H01L33/00

    摘要: Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.

    摘要翻译: 本发明的示例性实施例公开了一种发光二极管(LED)及其制造方法。 LED包括衬底,布置在衬底上的半导体堆叠,所述半导体堆叠包括具有第一导电类型的上半导体层,有源层和具有第二导电类型的下半导体层,将半导体堆叠分离成的隔离沟槽 多个区域,设置在所述基板和所述半导体堆叠之间的连接器,所述连接器将所述多个区域彼此电连接,以及具有多层结构的分布式布拉格反射器(DBR),所述DBR布置在所述半导体堆叠和 连接器。 连接器通过DBR电连接到半导体堆叠,并且DBR的部分设置在隔离沟槽和连接器之间。

    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
    发光二极管及其制造方法

    公开(公告)号:US20120080695A1

    公开(公告)日:2012-04-05

    申请号:US13080116

    申请日:2011-04-05

    IPC分类号: H01L33/60

    摘要: Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.

    摘要翻译: 本发明的示例性实施例公开了一种发光二极管(LED)及其制造方法。 LED包括衬底,布置在衬底上的半导体堆叠,所述半导体堆叠包括具有第一导电类型的上半导体层,有源层和具有第二导电类型的下半导体层,将半导体堆叠分离成的隔离沟槽 多个区域,设置在所述基板和所述半导体堆叠之间的连接器,所述连接器将所述多个区域彼此电连接,以及具有多层结构的分布式布拉格反射器(DBR),所述DBR布置在所述半导体堆叠和 连接器。 连接器通过DBR电连接到半导体堆叠,并且DBR的部分设置在隔离沟槽和连接器之间。

    LIGHT EMITTING DIODE
    7.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号:US20120187424A1

    公开(公告)日:2012-07-26

    申请号:US13187010

    申请日:2011-07-20

    IPC分类号: H01L33/08 H01L33/60 H01L33/38

    摘要: Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells.

    摘要翻译: 本发明的示例性实施例涉及包括适于AC驱动的衬底上的多个发光单元的发光二极管。 发光二极管包括基板和形成在基板上的多个发光单元。 每个发光单元包括在发光单元的边界处的第一区域和与第一区域相对的第二区域。 第一电极焊盘形成在发光单元的第一区域中。 具有直线形状的第二电极焊盘设置成面对第一电极焊盘,同时区域地限定与第二区域的边界一起的周边区域。 导线将第一电极焊盘连接到两个相邻的发光单元之间的第二电极焊盘。

    Light emitting diode
    8.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号:US08629471B2

    公开(公告)日:2014-01-14

    申请号:US13187010

    申请日:2011-07-20

    IPC分类号: H01L33/00

    摘要: Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells.

    摘要翻译: 本发明的示例性实施例涉及包括适于AC驱动的衬底上的多个发光单元的发光二极管。 发光二极管包括基板和形成在基板上的多个发光单元。 每个发光单元包括在发光单元的边界处的第一区域和与第一区域相对的第二区域。 第一电极焊盘形成在发光单元的第一区域中。 具有直线形状的第二电极焊盘设置成面对第一电极焊盘,同时区域地限定与第二区域的边界一起的周边区域。 导线将第一电极焊盘连接到两个相邻的发光单元之间的第二电极焊盘。

    Light emitting diode
    10.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号:US08283682B2

    公开(公告)日:2012-10-09

    申请号:US13111406

    申请日:2011-05-19

    IPC分类号: H01L29/20

    摘要: The present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and are symmetric with respect to those of adjacent another of the light emitting cells.

    摘要翻译: 本发明包括一个衬底和至少一个串联阵列,其具有串联连接在衬底上的多个发光单元。 每个发光单元包括下半导体层,上半导体层,插入在下半导体层和上半导体层之间的有源层,形成在暴露于基板的第一角的下半导体层上的下电极,上电极 形成在所述上半导体层上的层,以及形成在所述上电极层上的上电极焊盘,所述上电极焊盘在所述衬底的第二拐角处露出。 上电极焊盘和下电极分别设置在彼此对角相对的角上,并且相对于相邻的发光单元的对角。