公开(公告)号：US4260810A

公开(公告)日：1981-04-07

申请号：US52341

申请日：1979-06-27

申请人： Sumio Umemura ,  Kanenobu Matsui ,  Yoshinari Ikeda ,  Katsuro Masunaga ,  Takumi Kadota ,  Kozo Fujii ,  Keigo Nishihira ,  Masaoki Matsuda

发明人： Sumio Umemura ,  Kanenobu Matsui ,  Yoshinari Ikeda ,  Katsuro Masunaga ,  Takumi Kadota ,  Kozo Fujii ,  Keigo Nishihira ,  Masaoki Matsuda

IPC分类号： B01J23/00 ,  C07B61/00 ,  C07C67/36 ,  C07C67/38 ,  C07C69/34 ,  C07C69/36 ,  C07C69/40 ,  C07C69/612 ,  C07C69/75

CPC分类号： C07C67/38

摘要： A process for preparing a diester of a dicarboxylic acid having two more carbon atoms than the unsaturated hydrocarbon used as a starting material, which comprises subjecting an unsaturated hydrocarbon, carbon monoxide and an ester of nitrous acid to catalytic vapor phase reaction at a temperature of 50.degree. to 200.degree. C. in the presence of a platinum group metal or a salt thereof and a halogen compound.

摘要翻译： 制备具有比用作原料的不饱和烃多两个碳原子的二羧酸的二酯的方法，该方法包括使不饱和烃，一氧化碳和亚硝酸酯在50℃的温度下进行催化气相反应 在铂族金属或其盐和卤素化合物的存在下，将其加热至200℃。

公开(公告)号：US4234740A

公开(公告)日：1980-11-18

申请号：US964363

申请日：1978-11-28

申请人： Sumio Umemura ,  Kanenobu Matsui ,  Yoshinari Ikeda ,  Katsuro Masunaga ,  Takumi Kadota

发明人： Sumio Umemura ,  Kanenobu Matsui ,  Yoshinari Ikeda ,  Katsuro Masunaga ,  Takumi Kadota

IPC分类号： B01J23/00 ,  B01J27/00 ,  B01J31/00 ,  C07B61/00 ,  C07C67/38 ,  C07C69/34

CPC分类号： C07C69/34

摘要： A process for preparing a diester of a dicarboxylic acid having two more carbon atoms than the unsaturated hydrocarbon used as the starting material, which comprises subjecting an unsaturated hydrocarbon, carbon monoxide and an alcohol to reaction in the presence of a platinum group metal or a salt thereof; a compound selected from the group consisting of nitric acid, a nitrogen oxide and an ester of nitrous acid; and a halogen compound.

摘要翻译： 一种制备具有比用作原料的不饱和烃多两个碳原子的二羧酸的二酯的方法，其包括在铂族金属或盐的存在下使不饱和烃，一氧化碳和醇进行反应 的; 选自硝酸，氮氧化物和亚硝酸酯的化合物; 和卤素化合物。

公开(公告)号：US4138580A

公开(公告)日：1979-02-06

申请号：US837850

申请日：1977-09-29

申请人： Sumio Umemura ,  Kanenobu Matsui ,  Yoshinari Ikeda ,  Katsuro Masunaga

发明人： Sumio Umemura ,  Kanenobu Matsui ,  Yoshinari Ikeda ,  Katsuro Masunaga

IPC分类号： C07C67/38 ,  C07C69/34

CPC分类号： C07C67/38 ,  C07C2101/14

摘要： A process for preparing a diester of a dicarboxylic acid having two more carbon atoms than the unsaturated hydrocarbon used as a starting material, which comprises subjecting an unsaturated hydrocarbon, carbon monoxide and an alcohol to reaction in the presence of a platinum group metal in combination with one or more compounds selected from the group consisting of nitric acid, a nitrogen oxide and an ester of nitrous acid.

摘要翻译： 一种制备具有比用作原料的不饱和烃多两个碳原子的二羧酸的二酯的方法，该方法包括使不饱和烃，一氧化碳和醇在铂族金属存在下反应，结合 一种或多种选自硝酸，氮氧化物和亚硝酸酯的化合物。

公开(公告)号：US08779584B2

公开(公告)日：2014-07-15

申请号：US11896153

申请日：2007-08-30

申请人： Toshiyuki Yokomae ,  Katsumichi Ueyanagi ,  Eiji Mochizuki ,  Yoshinari Ikeda

发明人： Toshiyuki Yokomae ,  Katsumichi Ueyanagi ,  Eiji Mochizuki ,  Yoshinari Ikeda

IPC分类号： H01L23/34

CPC分类号： H01L23/492 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/371 ,  H01L2224/37599 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/19107 ,  H01L2924/00015 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor apparatus equipped with at least one semiconductor element includes a metallic plate bonded to an upper surface of the semiconductor element and a conductor plate, bonded to the metallic plate and serving as an electric current path of the semiconductor apparatus. The conductor plate and the metallic plate are bonded to each other by laser welding at a part other than a part directly above the semiconductor element. As a result, heat damage caused by laser welding can be reduced.

摘要翻译： 配备有至少一个半导体元件的半导体装置包括接合到半导体元件的上表面的金属板和接合到金属板并用作半导体装置的电流路径的导体板。 导体板和金属板通过激光焊接在除半导体元件正上方的部分之外的部分彼此接合。 结果，可以减少由激光焊接引起的热损伤。

公开(公告)号：US20080284033A1

公开(公告)日：2008-11-20

申请号：US12149115

申请日：2008-04-28

申请人： Masafumi Horio ,  Yoshinari Ikeda ,  Eiji Mochizuki

发明人： Masafumi Horio ,  Yoshinari Ikeda ,  Eiji Mochizuki

IPC分类号： H01L23/485 ,  H01L21/60

CPC分类号： H01L23/3735 ,  H01L23/142 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： A semiconductor device includes a first metal foil, an insulating sheet mounted on an upper surface of the first metal foil main, at least one second metal foil mounted on the insulating sheet, at least one solder layer mounted on the at least one second metal foil, and at least one semiconductor element mounted on the at least one second metal foil through the at least one solder layer. The at least one semiconductor has a thickness of 50 μm or greater and less than 100 μm.

摘要翻译： 半导体器件包括第一金属箔，安装在第一金属箔主体的上表面上的绝缘片，安装在绝缘片上的至少一个第二金属箔，安装在至少一个第二金属箔上的至少一个焊料层 以及通过所述至少一个焊料层安装在所述至少一个第二金属箔上的至少一个半导体元件。 所述至少一个半导体具有50μm或更大且小于100μm的厚度。

公开(公告)号：US20110037166A1

公开(公告)日：2011-02-17

申请号：US12735926

申请日：2009-04-08

申请人： Yoshinari Ikeda ,  Shin Soyano ,  Akira Morozumi ,  Kenji Suzuki ,  Yoshikazu Takahashi

发明人： Yoshinari Ikeda ,  Shin Soyano ,  Akira Morozumi ,  Kenji Suzuki ,  Yoshikazu Takahashi

IPC分类号： H01L23/34 ,  H01L21/00

CPC分类号： H01L24/80 ,  H01L21/4882 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/117 ,  H01L2224/05554 ,  H01L2224/29 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/29298 ,  H01L2224/83205

摘要： The object of the present invention is to efficiently dissipate heat from the upper and lower main surfaces of a semiconductor device carrying a semiconductor element. A semiconductor device (1) is provided with an insulating substrate (10A), an insulating substrate (10B) provided so as to face the insulating substrate (10A), and a semiconductor element (20) disposed between the insulating substrate (10A) and the insulating substrate (10B) and having a collector electrode and an emitter electrode provided on the side opposite to that of the collector electrode. The collector electrode is electrically connected to a metal foil (10ac) provided on the insulating substrate (10A), and the emitter electrode is electrically connected to the metal foil (10bc) provided on the insulating substrate (10B). As a result, heat generated by the semiconductor element (20) is efficiently dissipated from the upper and lower main surfaces of the semiconductor device (1).

摘要翻译： 本发明的目的是有效地从携带半导体元件的半导体器件的上主表面和下主表面散热。 半导体器件（1）设置有绝缘基板（10A），设置为与绝缘基板（10A）相对的绝缘基板（10B），以及设置在绝缘基板（10A）和 绝缘基板（10B），并且具有集电极和设置在与集电极的相反侧的发射极。 集电极电连接到设置在绝缘基板（10A）上的金属箔（10ac），发射电极与设在绝缘基板（10B）上的金属箔（10bc）电连接。 结果，由半导体元件（20）产生的热量有效地从半导体器件（1）的上主表面和下主表面消散。

公开(公告)号：US07888173B2

公开(公告)日：2011-02-15

申请号：US12382412

申请日：2009-03-12

申请人： Harutaka Taniguchi ,  Yoshinari Ikeda

发明人： Harutaka Taniguchi ,  Yoshinari Ikeda

IPC分类号： H01L21/00

CPC分类号： H05K3/34 ,  H01L23/5385 ,  H01L24/01 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/83 ,  H01L24/91 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/83051 ,  H01L2224/83101 ,  H01L2224/83365 ,  H01L2224/838 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0135 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/157 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K1/145 ,  H05K2201/10166 ,  H05K2201/10303 ,  H05K2201/1059 ,  H05K2201/10962 ,  H05K2201/10969 ,  H05K2203/0405 ,  H01L2924/00 ,  H01L2924/07025 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01028

摘要： A semiconductor device manufacturing method includes the steps of preparing a semiconductor element having a first electrode, a second electrode, and a third electrode facing the first electrode and second electrode, the first electrode and second electrode being electrically separated by an insulating layer; arranging a first conductive bonding material on a first metal foil and placing the semiconductor element on the first conductive bonding material; supporting a sheet-shape second conductive bonding material by the insulating layer; arranging a first post electrode and a second post electrode above the first and second electrodes respectively with the second conductive bonding material intervening therebetween; and forming a first conductive bonding layer for bonding the first electrode and the first post electrode, a second conductive bonding layer for bonding the second electrode and the second post electrode, and a third conductive bonding layer for bonding the third electrode and the first metal foil.

摘要翻译： 半导体器件制造方法包括以下步骤：制备具有第一电极，第二电极和与第一电极和第二电极相对的第三电极的半导体元件，第一电极和第二电极通过绝缘层电隔离; 在第一金属箔上布置第一导电接合材料并将半导体元件放置在第一导电接合材料上; 通过绝缘层支撑片状第二导电接合材料; 在所述第一和第二电极上方分别设置第一电极和第二电极，所述第二电极和第二电极分别与所述第二电极和所述第二电极之间插入所述第二电极和第二电极。 以及形成用于接合所述第一电极和所述第一电极的第一导电接合层，用于接合所述第二电极和所述第二电极的第二导电接合层，以及用于接合所述第三电极和所述第一金属箔的第三导电接合层 。

公开(公告)号：US08450845B2

公开(公告)日：2013-05-28

申请号：US12735926

申请日：2009-04-08

申请人： Yoshinari Ikeda ,  Shin Soyano ,  Akira Morozumi ,  Kenji Suzuki ,  Yoshikazu Takahashi

发明人： Yoshinari Ikeda ,  Shin Soyano ,  Akira Morozumi ,  Kenji Suzuki ,  Yoshikazu Takahashi

IPC分类号： H01L23/34

CPC分类号： H01L24/80 ,  H01L21/4882 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/117 ,  H01L2224/05554 ,  H01L2224/29 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/29298 ,  H01L2224/83205

摘要： The object of the present invention is to efficiently dissipate heat from the upper and lower main surfaces of a semiconductor device carrying a semiconductor element. A semiconductor device (1) is provided with an insulating substrate (10A), an insulating substrate (10B) provided so as to face the insulating substrate (10A), and a semiconductor element (20) disposed between the insulating substrate (10A) and the insulating substrate (10B) and having a collector electrode and an emitter electrode provided on the side opposite to that of the collector electrode. The collector electrode is electrically connected to a metal foil (10ac) provided on the insulating substrate (10A), and the emitter electrode is electrically connected to the metal foil (10bc) provided on the insulating substrate (10B). As a result, heat generated by the semiconductor element (20) is efficiently dissipated from the upper and lower main surfaces of the semiconductor device (1).

摘要翻译： 本发明的目的是有效地从携带半导体元件的半导体器件的上主表面和下主表面散热。 半导体器件（1）设置有绝缘基板（10A），设置为与绝缘基板（10A）相对的绝缘基板（10B），以及设置在绝缘基板（10A）和 绝缘基板（10B），并且具有集电极和设置在与集电极的相反侧的发射极。 集电极电连接到设置在绝缘基板（10A）上的金属箔（10ac），发射电极与设在绝缘基板（10B）上的金属箔（10bc）电连接。 结果，由半导体元件（20）产生的热量有效地从半导体器件（1）的上主表面和下主表面消散。

公开(公告)号：US20120241953A1

公开(公告)日：2012-09-27

申请号：US13500034

申请日：2010-12-28

申请人： Takafumi Yamada ,  Tetsuya Inaba ,  Yoshinari Ikeda ,  Katsuhiko Yanagawa ,  Yoshikazu Takahashi

发明人： Takafumi Yamada ,  Tetsuya Inaba ,  Yoshinari Ikeda ,  Katsuhiko Yanagawa ,  Yoshikazu Takahashi

IPC分类号： H01L23/49

CPC分类号： H05K7/20509 ,  H01L23/3121 ,  H01L23/4006 ,  H01L23/4334 ,  H01L23/49811 ,  H01L25/115 ,  H01L25/18 ,  H01L2224/01 ,  H01L2924/0002 ,  H05K7/02 ,  H01L2924/00

摘要： A semiconductor device has a single unit capable of improving adhesion to a cooling body and a heat dissipation performance, and an aggregate of the single units is capable of configuring any circuit at a low cost. A single unit (101) includes copper blocks (1, 8), an insulating substrate (6) with a conductive pattern, an IGBT chip (10), a diode chip (13), a collector terminal pin (15), implant pins (17) fixed to the chips (10) by solder (11), a printed circuit board (16) having the implant pins (17) fixed thereto, an emitter terminal pin (19), a control terminal pin (20), a collector terminal pin (15), and a resin case (21) having the above-mentioned components sealed therein. The copper blocks (1, 8) make it possible to improve adhesion to a cooling body and the heat dissipation performance. A plurality of single units (101) can be combined with an inter-unit wiring board to form any circuit.

摘要翻译： 半导体器件具有能够改善与冷却体的粘附性和散热性能的单个单元，并且单个单元的聚集体能够以低成本构成任何电路。 单个单元（101）包括铜块（1,8），具有导电图案的绝缘衬底（6），IGBT芯片（10），二极管芯片（13），集电极端子引脚（15），注入针 （17），通过焊料（11）固定到所述芯片（10），具有固定到其上的注入针脚（17）的印刷电路板（16），发射极端子针（19），控制端子针（20）， 集电体端子销（15）和具有密封在其中的上述部件的树脂壳体（21）。 铜块（1,8）可以提高对冷却体的粘附性和散热性能。 多个单个单元（101）可以与单元间布线板组合以形成任何电路。

公开(公告)号：US20080150102A1

公开(公告)日：2008-06-26

申请号：US11872867

申请日：2007-10-16

申请人： Toshiyuki Yokomae ,  Katsumichi Ueyanagi ,  Eiji Mochizuki ,  Yoshinari Ikeda

发明人： Toshiyuki Yokomae ,  Katsumichi Ueyanagi ,  Eiji Mochizuki ,  Yoshinari Ikeda

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L25/072 ,  H01L23/3735 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/84 ,  H01L25/162 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/05553 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37111 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83224 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An electrical connection inside a semiconductor device is established by lead frames formed of plural conductor plates. The lead frames are disposed three-dimensionally so that the respective weld parts thereof are exposed toward a laser light source used in the laser welding. The laser welding is then performed by irradiating a laser beam. According to the above, welding can be performed readily in a reliable manner. The productivity of the semiconductor device and the manufacturing method of the semiconductor device can be thus enhanced. In addition, because the lead frames have the cooling effect, they have the capability of a heat spreader. It is thus possible to provide a semiconductor device and a manufacturing method of the semiconductor device with high productivity.

摘要翻译： 通过由多个导体板形成的引线框架建立半导体器件内部的电连接。 引线框架三维地设置，使得其各个焊接部分朝向激光焊接中使用的激光源曝光。 然后通过照射激光束来进行激光焊接。 根据上述，可以容易地以可靠的方式进行焊接。 因此可以提高半导体器件的生产率和半导体器件的制造方法。 另外，由于引线框具有冷却效果，因此具有散热器的能力。 因此，可以以高生产率提供半导体器件的半导体器件和制造方法。