摘要:
Provided is a layout method for protein-protein interaction networks based on a seed protein, which is for performing multiple stages of nesting centered on a node having a high degree of physical relationship, and performing multiple stages of extension and force directed placement (FDP) with respect to a final nest graph. The layout method includes the steps of: a) extracting a node list of each sub-graph constituting a protein-protein interaction network, and aligning the node list according to adjacency of nodes; b) selecting a seed protein from the aligned node list according to node priority and nest relationship with another node; c) nesting adjacent nodes centered on the selected seed protein to generate a nested node; and d) selecting an initial position of the generated nested node, placing the nodes of the nested nodes on respective division points, centered on the seed protein, and then performing layout.
摘要:
An apparatus for controlling a battery includes a capacitor for charging a voltage when the apparatus is on and discharging a voltage when the apparatus is off, a discharging circuit for discharging the voltage charged in the capacitor; a first switching unit for connecting or disconnecting the capacitor to/from a predetermined power source for the purpose of charging of the capacitor; a second switching unit for connecting or disconnecting the capacitor to/from the discharging unit; a voltage measuring unit for measuring a voltage charged in the capacitor; and a controller for calculating a power-off duration time according to the measured voltage. This apparatus may continuously calculate a power-off duration time of a battery pack.
摘要:
A positive type photoresist resin film includes a support film and a thermosetting positive type photoresist resin layer laminated over the support film. The positive type photoresist resin layer contains alkali soluble resin, a diazide based photosensitive compound and a sensitivity enhancer. The support film has a surface roughness that inhibits the formation of defect structures such as fish eye. The invention overcomes process inefficiencies and defects cause by spin coating photoresist technologies.
摘要:
A semiconductor memory device is provided which comprises a mat having a plurality of sectors for storing information of data; and a redundancy circuit for generating a plurality of redundancy selection signals to be applied in common to the sectors when the enable fuse element is open-circuited. Each of the sectors comprises a main memory cell array and the redundancy memory cell array divided into two redundant bit segments, each of which has two redundant columns of redundant memory cells. Each sector further comprises a first column selector for selecting one of the main columns of each bit segment in response to first column address signals; a second column selector for selecting one of the two redundant columns of each redundant bit segment in response to one of the first column address signals; and a third column selector for selecting one of the two bit segments in each input/output block and one of the two redundant bit segments in response to second column address signals. Furthermore, each sector has a plurality of sense amplifiers for sensing and amplifying stored data in corresponding main column and; redundant column thus selected; and a plurality of multiplexers each for receiving outputs from a first corresponding sense amplifier and from the second sense amplifier and selecting one of the outputs thus received in response to a corresponding redundancy selection signal.
摘要:
Disclosed is an apparatus for controlling the connection of a plurality of battery packs including a switching unit provided on a charge/discharge path of each battery pack to selectively open and close the charge/discharge path, a first control unit provided for each battery pack to determine the state of charge (SOC) of each battery pack and control the opening/closing of the switching unit, and a second control unit to receive the determined SOC of each battery pack from the first control unit, group battery packs having a predetermined range of SOCs, select a group containing a largest number of battery packs, connect the battery packs of the selected group in parallel, charge or discharge the parallel-connected battery packs so that a difference in SOC between the parallel-connected battery packs and the non-connected battery pack falls within a predetermined range, and connect the non-connected battery pack thereto in parallel.
摘要:
An apparatus for controlling a battery includes a capacitor for charging a voltage when the apparatus is on and discharging a voltage when the apparatus is off, a discharging circuit for discharging the voltage charged in the capacitor; a first switching unit for connecting or disconnecting the capacitor to/from a predetermined power source for the purpose of charging of the capacitor; a second switching unit for connecting or disconnecting the capacitor to/from the discharging unit; a voltage measuring unit for measuring a voltage charged in the capacitor; and a controller for calculating a power-off duration time according to the measured voltage. This apparatus may continuously calculate a power-off duration time of a battery pack.
摘要:
A method is disclosed for preventing over-erasure in a nonvolatile memory device having a plurality of sectors, each sector including a main field and a redundant field. The method includes the steps of programming memory cells included in the main and redundant fields, erasing the memory cells included in the main and redundant fields, and programming over-erased cells of the memory cells included in the main and redundant fields. The main and redundant fields are included in a sector.
摘要:
A nonvolatile semiconductor device which includes a word line, a bit line, and a memory cell connected to the word line and the bit line, also has a word line driving circuit for driving the word line with a word line voltage supplied in response to a shut off signal in accordance with each mode of operation, and a circuit for generating the shut off signal during each mode of operation. The circuit generates the shut off signal which has a power supply voltage when the word line voltage is higher than the power supply voltage, and has the word line voltage when the word line voltage is less than the power supply voltage.
摘要:
An electrically erasable and programmable non-volatile semiconductor memory device and method of erasing the same device are provided. A fail bit counter is provided for the device and method. The fail bit counter counts erase fail bits during the sector erase operation. An erase control circuit selectively terminates the sector erase operation depending upon erase fail bit number.
摘要:
A positive type photoresist resin film contains a support film and a positive photoresist resin layer laminated over the support film. The peak height (Rp) of the support film is less than about 300 nm to eliminate fish eye defects. The positive photoresist resin layer may contain alkali soluble resin, a diazide based photosensitive compound, a plasticizer and, optionally, a sensitivity enhancer and a releasing agent.