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    Active optical device and display apparatus including the same
    2.
    发明授权
    Active optical device and display apparatus including the same 有权
    有源光学器件及其显示装置

    公开(公告)号：US09104031B2

    公开(公告)日：2015-08-11

    申请号：US13482333

    申请日：2012-05-29

    申请人： Sun-il Kim ,  Jun-hee Choi

    发明人： Sun-il Kim ,  Jun-hee Choi

    IPC分类号： G02F1/33 ,  G02B27/22 ,  G02F1/29 ,  G02F1/03 ,  G02F1/1343

    CPC分类号： G02B27/22 ,  G02F1/0338 ,  G02F1/134309 ,  G02F1/29 ,  G02F2203/10 ,  G02F2203/50

    摘要： An active optical device and a display apparatus including the same are provided. The active optical device includes: first to third electrodes that are sequentially disposed spaced apart from one another; a first refractive index change layer disposed between the first electrode and the second electrode and in which a refractive index is changed by an electric field; and a second refractive index change layer disposed between the second electrode and the third electrode and in which a refractive index is changed by an electric field.

    摘要翻译： 提供了一种有源光学装置和包括该光学装置的显示装置。 有源光学器件包括：第一至第三电极，其彼此间隔开地依次布置; 第一折射率变化层，设置在第一电极和第二电极之间，折射率由电场改变; 以及设置在所述第二电极和所述第三电极之间并且折射率由电场改变的第二折射率变化层。

    Method of fabricating field emission array type light emitting unit
    4.
    发明申请
    Method of fabricating field emission array type light emitting unit 有权
    场致发射阵列型发光单元的制造方法

    公开(公告)号：US20080102547A1

    公开(公告)日：2008-05-01

    申请号：US11907942

    申请日：2007-10-18

    申请人： Sun-il Kim ,  Jun-hee Choi ,  Byong-gwon Song ,  Shang-hyeun Park ,  Ho-suk Kang ,  Deuk-seok Chung ,  Chan-wook Baik

    发明人： Sun-il Kim ,  Jun-hee Choi ,  Byong-gwon Song ,  Shang-hyeun Park ,  Ho-suk Kang ,  Deuk-seok Chung ,  Chan-wook Baik

    IPC分类号： H01L33/00

    CPC分类号： H01J63/02 ,  G02F2001/133625 ,  H01J9/247

    摘要： A method of fabricating a field emission array type light emitting unit that includes a rear substrate including a plurality of cathodes and a plurality of carbon nanotube emitters on a front side, a front substrate including a plurality of anodes and a phosphor layer on a rear side, wherein the rear substrate and the front substrate are arranged at a distance apart from each other and a plurality of spacers are arranged between the rear substrate and the front substrate, the plurality of spacers being adapted to maintain constant the distance, the method includes producing a diffusion pattern by wet etching a front side of the front substrate.

    摘要翻译： 一种制造场发射阵列型发光单元的方法，该发光阵列型发光单元包括：前表面上包括多个阴极和多个碳纳米管发射体的后基板，包括多个阳极的前基板和背面的荧光体层 其特征在于，所述后基板和所述前基板被配置成彼此间隔开，并且在所述后基板与所述前基板之间配置有多个间隔件，所述多个间隔件适于保持距离恒定，所述方法包括： 通过湿法蚀刻前基板的前侧的扩散图案。

    Method of fabricating field emission array type light emitting unit
    5.
    发明授权
    Method of fabricating field emission array type light emitting unit 有权
    场致发射阵列型发光单元的制造方法

    公开(公告)号：US07851231B2

    公开(公告)日：2010-12-14

    申请号：US11907942

    申请日：2007-10-18

    申请人： Sun-il Kim ,  Jun-hee Choi ,  Byong-gwon Song ,  Shang-hyeun Park ,  Ho-suk Kang ,  Deuk-seok Chung ,  Chan-wook Baik

    发明人： Sun-il Kim ,  Jun-hee Choi ,  Byong-gwon Song ,  Shang-hyeun Park ,  Ho-suk Kang ,  Deuk-seok Chung ,  Chan-wook Baik

    IPC分类号： H01L21/00

    CPC分类号： H01J63/02 ,  G02F2001/133625 ,  H01J9/247

    摘要： A method of fabricating a field emission array type light emitting unit that includes a rear substrate including a plurality of cathodes and a plurality of carbon nanotube emitters on a front side, a front substrate including a plurality of anodes and a phosphor layer on a rear side, wherein the rear substrate and the front substrate are arranged at a distance apart from each other and a plurality of spacers are arranged between the rear substrate and the front substrate, the plurality of spacers being adapted to maintain constant the distance, the method includes producing a diffusion pattern by wet etching a front side of the front substrate.

    摘要翻译： 一种制造场发射阵列型发光单元的方法，该发光阵列型发光单元包括：前表面上包括多个阴极和多个碳纳米管发射体的后基板，包括多个阳极的前基板和背面的荧光体层 其特征在于，所述后基板和所述前基板被配置成彼此间隔开，并且在所述后基板与所述前基板之间配置有多个间隔件，所述多个间隔件适于保持距离恒定，所述方法包括： 通过湿法蚀刻前基板的前侧的扩散图案。

    X-ray pixels including double photoconductors and X-ray detectors including the X-ray pixels
    6.
    发明授权
    X-ray pixels including double photoconductors and X-ray detectors including the X-ray pixels 有权
    包括双光电导体的X射线像素和包括X射线像素的X射线检测器

    公开(公告)号：US09348037B2

    公开(公告)日：2016-05-24

    申请号：US12923553

    申请日：2010-09-28

    申请人： Sang-wook Kim ,  Jae-chul Park ,  Sun-il Kim ,  Chang-jung Kim

    发明人： Sang-wook Kim ,  Jae-chul Park ,  Sun-il Kim ,  Chang-jung Kim

    IPC分类号： H01L31/08 ,  G01T1/24

    CPC分类号： G01T1/242 ,  H01L31/085

    摘要： Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.

    摘要翻译： 示例性实施例涉及包括双光电导体的X射线检测器。 根据示例性实施例，X射线检测器包括在其上入射X射线的第一感光体和通过第一光电导体透射X射线的第二感光体。 第一光电导体和第二光电导体包括串联结构。 第一光电导体由硅形成并在低能带中吸收X射线，第二光电导体由吸收X射线的能量带的材料形成，该能带高于由硅吸收的X射线的低能带 。

    Large-scale X-ray detectors and methods of manufacturing the same
    7.
    发明授权
    Large-scale X-ray detectors and methods of manufacturing the same 有权
    大型X射线探测器及其制造方法

    公开(公告)号：US08847168B2

    公开(公告)日：2014-09-30

    申请号：US12929203

    申请日：2011-01-07

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    IPC分类号： G01T1/24 ,  H01L31/08 ,  H01L27/146

    CPC分类号： G01T1/24 ,  H01L24/24 ,  H01L24/73 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L27/14687 ,  H01L31/085 ,  H01L2224/16225 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

    摘要： Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer.

    摘要翻译： 提供了大规模X射线检测器及其制造方法，大规模X射线检测器包括：光电导体层，被配置为根据入射的X射线使用光电导体层的整个面积产生电荷; 所述光电导体层的上表面上的公共电极，被配置为将所述电荷转换为电信号的多个像素电极，在所述感光体层的下表面上并分成多个组，以及多个应用特定 集成电路（ASIC），每个对应于该组中的一个。 每个ASIC被配置为处理通过相应组中的像素电极传送的电信号。 ASIC处理电信号，使得ASIC相对于感光体层的整个区域共同地产生无缝图像信息。

    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor
    10.
    发明申请
    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor 有权
    晶体管，制造晶体管的方法以及包括晶体管的电子器件

    公开(公告)号：US20110175080A1

    公开(公告)日：2011-07-21

    申请号：US12805648

    申请日：2010-08-11

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    IPC分类号： H01L29/12 ,  H01L29/78 ,  H01L21/16

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969 ,  H01L29/78606

    摘要： Transistors, methods of manufacturing a transistor, and electronic devices including a transistor are provided, the transistor includes a channel layer, a source and a drain respectively contacting opposing ends of the channel layer, a gate corresponding to the channel layer, a gate insulating layer between the channel layer and the gate, and a first passivation layer and a second passivation layer sequentially disposed on the gate insulating layer. The first passivation layer covers the source, the drain, the gate, the gate insulating layer and the channel layer. The second passivation layer includes fluorine (F).

    摘要翻译： 提供晶体管，制造晶体管的方法和包括晶体管的电子器件，晶体管包括沟道层，分别接触沟道层的相对端的源极和漏极，对应于沟道层的栅极，栅极绝缘层 在沟道层和栅极之间，以及顺序地设置在栅极绝缘层上的第一钝化层和第二钝化层。 第一钝化层覆盖源极，漏极，栅极，栅极绝缘层和沟道层。 第二钝化层包括氟（F）。