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    Method for preparing norbornene based addition polymer containing ester or acetyl functional group
    1.
    发明授权
    Method for preparing norbornene based addition polymer containing ester or acetyl functional group 有权
    制备含有酯或乙酰基官能团的降冰片烯基加成聚合物的方法

    公开(公告)号：US07312285B2

    公开(公告)日：2007-12-25

    申请号：US10494882

    申请日：2003-07-07

    申请人： Sung-Ho Chun ,  Won-Kook Kim ,  Sung-Cheol Yoon ,  Tae-Sun Lim ,  Heon Kim ,  Kyoung-Hoon Kim

    发明人： Sung-Ho Chun ,  Won-Kook Kim ,  Sung-Cheol Yoon ,  Tae-Sun Lim ,  Heon Kim ,  Kyoung-Hoon Kim

    IPC分类号： C08F4/44

    CPC分类号： C08G61/08 ,  C08F4/7027 ,  C08F32/08 ,  C08F132/08 ,  C08F2410/01 ,  C08G61/06 ,  G02F1/136227

    摘要： The present invention relates to a method for preparing a cyclic olefin polymer by addition polymerization, and more particularly to a method for preparing a norbornene-based addition polymer, which comprises a step of contacting a norbornene-based monomer having an ester or acetyl group with a catalyst system comprising: a Group X transition metal compound; a compound comprising a neutral Group XV electron donor ligand having a cone angle of at least 160°; and a salt capable of offering an anion that can be weakly coordinated to the transition metal, in solvent. The norbornene-based addition polymer having an ester or acetyl group according to the present invention is transparent, has superior adhesivity and a low dielectric constant, and it generates no byproducts when attached to metal. Therefore, it can be used as an optical film, a retardation film, a protection film for a polarizer, POFs (plastic optical fiber), PCBs (printed circuit board), or insulators of electronic devices.

    摘要翻译： 本发明涉及通过加成聚合制备环烯烃聚合物的方法，更具体地说涉及一种制备降冰片烯系加成聚合物的方法，该方法包括使具有酯或乙酰基的降冰片烯系单体与 一种催化剂体系，包括：第X族过渡金属化合物; 包含具有至少160°的锥角的中性第XV族电子供体配体的化合物; 以及能够在溶剂中提供能够与过渡金属配位的阴离子的盐。 具有根据本发明的酯或乙酰基的降冰片烯系加成聚合物是透明的，具有优异的粘合性和低介电常数，并且当附着于金属时不产生副产物。 因此，它可以用作光学膜，延迟膜，偏振器用保护膜，POF（塑料光纤），PCB（印刷电路板）或电子器件的绝缘体。

    Method for producing norbornene monomer composition, norbornene polymer prepared therefrom, optical film comprising the norbornene polymer, and method for producing the norbornene polymer
    2.
    发明授权
    Method for producing norbornene monomer composition, norbornene polymer prepared therefrom, optical film comprising the norbornene polymer, and method for producing the norbornene polymer 有权
    制备降冰片烯单体组合物的方法，由其制备的降冰片烯聚合物，包含降冰片烯聚合物的光学膜以及降冰片烯聚合物的制备方法

    公开(公告)号：US07989571B2

    公开(公告)日：2011-08-02

    申请号：US12098081

    申请日：2008-04-04

    申请人： Sung-Ho Chun ,  Won-Kook Kim ,  Sung-Cheol Yoon ,  Tae-Sun Lim ,  Heon Kim ,  Kyoung-Hoon Kim ,  Jung-Min Lee ,  Kyung-Lim Paik ,  Sang-Doo Ahn

    发明人： Sung-Ho Chun ,  Won-Kook Kim ,  Sung-Cheol Yoon ,  Tae-Sun Lim ,  Heon Kim ,  Kyoung-Hoon Kim ,  Jung-Min Lee ,  Kyung-Lim Paik ,  Sang-Doo Ahn

    IPC分类号： C08F10/14

    CPC分类号： C08F32/08 ,  C08F232/08 ,  C08G61/06 ,  C08G61/08 ,  G02F1/133634

    摘要： Disclosed is a method for producing a norbornene monomer composition, a norbornene polymer produced using the norbornene monomer composition, an optical film including the norbornene polymer, and a method for producing the norbornene polymer. The method includes reacting a reaction solution that contains cyclopentadiene, dicyclopentadiene, or a mixture of cyclopentadiene and dicyclopentadiene, an acetate compound, and a solvent so that a content of an exo isomer is 50 mol % or more. Variables such as a reaction temperature, a reaction time, a molar ratio between reactants, and addition of a solvent are controlled so that the exo isomer is contained in content of 50 mol % or more. Accordingly, it is possible to industrially produce an acetate norbornene addition polymer by using the acetate norbornene monomer composition containing the exo isomer in content of 50 mol % or more.

    摘要翻译： 公开了使用降冰片烯单体组合物制备的降冰片烯单体组合物，降冰片烯聚合物，含有降冰片烯聚合物的光学膜，以及降冰片烯聚合物的制造方法。 该方法包括使包含环戊二烯，二环戊二烯，环戊二烯和二环戊二烯的混合物，乙酸酯化合物和溶剂的反应溶液反应，使外型异构体的含量为50摩尔％以上。 控制诸如反应温度，反应时间，反应物之间的摩尔比和溶剂的添加等变量，使含有异构体的含量为50摩尔％以上。 因此，通过使用含有外分子异构体的乙酸降冰片烯单体组合物的含量为50摩尔％以上，可以在工业上制造乙酸降冰片烯类加成聚合物。

    Nobonene-ester based addition polymer and method for preparing the same
    4.
    发明授权
    Nobonene-ester based addition polymer and method for preparing the same 有权
    基于异羰基酯的加成聚合物及其制备方法

    公开(公告)号：US07442752B2

    公开(公告)日：2008-10-28

    申请号：US10494872

    申请日：2003-07-07

    申请人： Sung-Ho Chun ,  Won-Kook Kim ,  Sung-Cheol Yoon ,  Tae-Sun Lim ,  Heon Kim ,  Kyoung-Hoon Kim ,  Jung-Min Lee ,  Kyung-Lim Paik ,  Sang-Doo Ahn

    发明人： Sung-Ho Chun ,  Won-Kook Kim ,  Sung-Cheol Yoon ,  Tae-Sun Lim ,  Heon Kim ,  Kyoung-Hoon Kim ,  Jung-Min Lee ,  Kyung-Lim Paik ,  Sang-Doo Ahn

    IPC分类号： C08F10/14

    CPC分类号： C08F232/08 ,  C08F32/08 ,  C08G61/06 ,  C08G61/08 ,  G02F1/133634

    摘要： The present invention relates to a norbornene based addition polymer, and more particularly to an addition polymer of norbornene based monomers containing an ester group. The present invention provides a norbornene-ester based addition polymer having a molecular weight (Mn) larger than 20,000 and comprising a norbornene-ester based monomer comprising more than 50 mol % of exo norbornene-ester monomer as a repeating unit, a method for preparing the same, and an optically anisotropic film comprising the same. The norbornene-ester based addition polymer of the present invention is transparent, has a low dielectric constant, has good thermal stability and strength, leaves no unwanted materials when attached to metals or other polymers, and has good adhesivity, so that it can be used for optical films, retardation films, plastic substrate materials, transparent polymers such as POF or PCB, insulating materials, or insulating electronic devices such as PCB or insulating materials.

    摘要翻译： 本发明涉及降冰片烯系加成聚合物，更具体地说，涉及含有酯基的降冰片烯系单体的加成聚合物。 本发明提供一种分子量（Mn）大于20,000的降冰片烯酯系加成聚合物，其含有作为重复单元的外降冰片烯 - 酯单体的50摩尔％以下的降冰片烯酯系单体， 和含有该光学各向异性膜的光学各向异性膜。 本发明的降冰片烯酯类加成聚合物是透明的，介电常数低，热稳定性和强度好，附着于金属或其它聚合物时不会有不想要的物质，并且具有良好的粘合性，因此可以使用 用于光学膜，延迟膜，塑料基板材料，诸如POF或PCB的透明聚合物，绝缘材料或诸如PCB或绝缘材料的绝缘电子器件。

    Photoreactive exo-rich norbornene polymer and method for preparing the same
    7.
    发明授权
    Photoreactive exo-rich norbornene polymer and method for preparing the same 有权
    光反应性富含降冰片烯聚合物及其制备方法

    公开(公告)号：US08008415B2

    公开(公告)日：2011-08-30

    申请号：US12450303

    申请日：2008-03-21

    申请人： Heon Kim ,  Sung-Ho Chun ,  Hye-Young Jung ,  Dai-Seung Choi ,  Kyoung-Hoon Kim ,  Jong-Chan Kim

    发明人： Heon Kim ,  Sung-Ho Chun ,  Hye-Young Jung ,  Dai-Seung Choi ,  Kyoung-Hoon Kim ,  Jong-Chan Kim

    IPC分类号： C08F36/20 ,  C08F4/80 ,  C09K19/00

    CPC分类号： C08F32/08 ,  C08F8/00

    摘要： The present invention relates to a norbornene polymer that comprises a norbornene monomer having a photoreactive functional group, and a method of manufacturing the same. The norbornene polymer comprises at least 50 mol % of exo isomers among the norbornene monomers having the photoreactive functional group. Since the norbornene polymer according to the present invention comprises at least 50 mol % of exo isomers among the norbornene monomers having the photoreactive functional group, a molecular weight is significantly increased while the yield is not reduced during the manufacturing of the polymer. In views of the three dimensional structure, stability is ensured because the polymer has a planar structure in which the photoreactive groups between the molecules are close to each other. Therefore, the distance between the photoreactive groups is reduced, thus increasing the photoreaction rate.

    摘要翻译： 本发明涉及包含具有光反应性官能团的降冰片烯单体的降冰片烯聚合物及其制造方法。 降冰片烯聚合物包含具有光反应性官能团的降冰片烯单体中的至少50摩尔％的外来异构体。 由于根据本发明的降冰片烯聚合物在具有光反应性官能团的降冰片烯单体中包含至少50mol％的外部异构体，所以在聚合物的制造过程中分子量显着增加，而收率没有降低。 从三维结构的观点来看，确保了稳定性，因为聚合物具有其中分子之间的光反应基团彼此接近的平面结构。 因此，光反应基团之间的距离减小，从而增加光反应速率。

    PHOTOREACTIVE EXO-RICH NORBORNENE POLYMER AND METHOD FOR PREPARING THE SAME
    8.
    发明申请
    PHOTOREACTIVE EXO-RICH NORBORNENE POLYMER AND METHOD FOR PREPARING THE SAME 有权
    光催化超高斯诺酮聚合物及其制备方法

    公开(公告)号：US20100121005A1

    公开(公告)日：2010-05-13

    申请号：US12450303

    申请日：2008-03-21

    申请人： Heon Kim ,  Sung-Ho Chun ,  Hye-Young Jung ,  Dai-Seung Choi ,  Kyoung-Hoon Kim ,  Jong-Chan Kim

    发明人： Heon Kim ,  Sung-Ho Chun ,  Hye-Young Jung ,  Dai-Seung Choi ,  Kyoung-Hoon Kim ,  Jong-Chan Kim

    IPC分类号： C08F132/08 ,  C08F4/00

    CPC分类号： C08F32/08 ,  C08F8/00

    摘要： The present invention relates to a norbornene polymer that comprises a norbornene monomer having a photoreactive functional group, and a method of manufacturing the same. The norbornene polymer comprises at least 50 mol % of exo isomers among the norbornene monomers having the photoreactive functional group. Since the norbornene polymer according to the present invention comprises at least 50 mol % of exo isomers among the norbornene monomers having the photoreactive functional group, a molecular weight is significantly increased while the yield is not reduced during the manufacturing of the polymer. In views of the three dimensional structure, stability is ensured because the polymer has a planar structure in which the photoreactive groups between the molecules are close to each other. Therefore, the distance between the photoreactive groups is reduced, thus increasing the photoreaction rate.

    摘要翻译： 本发明涉及包含具有光反应性官能团的降冰片烯单体的降冰片烯聚合物及其制造方法。 降冰片烯聚合物包含具有光反应性官能团的降冰片烯单体中的至少50摩尔％的外来异构体。 由于根据本发明的降冰片烯聚合物在具有光反应性官能团的降冰片烯单体中包含至少50mol％的外部异构体，所以在聚合物的制造过程中分子量显着增加，而收率没有降低。 从三维结构的观点来看，确保了稳定性，因为聚合物具有其中分子之间的光反应基团彼此接近的平面结构。 因此，光反应基团之间的距离减小，从而增加光反应速率。

    Three-dimensional (3D) semiconductor memory devices
    9.
    发明授权
    Three-dimensional (3D) semiconductor memory devices 有权

    公开(公告)号：US09978752B2

    公开(公告)日：2018-05-22

    申请号：US15373922

    申请日：2016-12-09

    申请人： Kyoung-Hoon Kim ,  Sangyoun Jo

    发明人： Kyoung-Hoon Kim ,  Sangyoun Jo

    IPC分类号： H01L29/66 ,  H01L27/105 ,  H01L23/528 ,  G11C16/04

    CPC分类号： H01L27/1052 ,  G11C16/0483 ,  H01L23/5283 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

    摘要： A three-dimensional (3D) semiconductor memory device may include a substrate including a cell array region and a connection region, an electrode structure including pluralities of first and second electrodes that are vertically and alternately stacked on a surface of the substrate, extending in a first direction that is parallel to the surface of the substrate, and may include a stair step structure on the connection region, first and second string selection electrodes that extend in the first direction on the electrode structure and spaced apart from each other in a second direction that is parallel to the surface of the substrate and perpendicular to the first direction. The first and second string selection electrodes may each include an electrode portion on the cell array region and a pad portion that extends from the electrode portion in the first direction and on the connection region. Widths in the second direction of the pad portions may be different from widths in the second direction of the respective electrode portions.

    SEMICONDUCTOR MEMORY DEVICES HAVING VERTICAL PILLARS THAT ARE ELECTRICALLY CONNECTED TO LOWER CONTACTS
    10.
    发明申请
    SEMICONDUCTOR MEMORY DEVICES HAVING VERTICAL PILLARS THAT ARE ELECTRICALLY CONNECTED TO LOWER CONTACTS 审中-公开

    公开(公告)号：US20180026049A1

    公开(公告)日：2018-01-25

    申请号：US15706861

    申请日：2017-09-18

    申请人： TaeHee Lee ,  Kyoung-Hoon Kim ,  Hongsoo Kim

    发明人： TaeHee Lee ,  Kyoung-Hoon Kim ,  Hongsoo Kim

    IPC分类号： H01L27/11582

    CPC分类号： H01L27/11582 ,  H01L28/00

    摘要： A semiconductor memory device may include an electrode structure including a selection line on a substrate and word lines between the substrate and the selection line, vertical pillars penetrating the electrode structure and being connected to the substrate, sub-interconnections and bit lines sequentially stacked on and electrically connected to the vertical pillars, and lower contacts connecting the vertical pillars to the sub-interconnections. The selection line may include a plurality of selection lines separated from each other in a first direction by an insulating separation layer, and central axes of the lower contacts connected in common to one of the sub-interconnections may be shifted, in a second direction across the first direction and parallel to a top surface of the substrate, from central axes of the vertical pillars thereunder.