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    Secondary battery employing battery case of high strength
    1.
    发明申请
    Secondary battery employing battery case of high strength 审中-公开
    二次电池采用高强度电池箱

    公开(公告)号：US20060093908A1

    公开(公告)日：2006-05-04

    申请号：US11253221

    申请日：2005-10-18

    申请人： Sung-Min Hwang ,  Kichul Hong ,  Hyang Lee ,  Chang Ahn ,  Kyong Kang ,  JeongSam Son

    发明人： Sung-Min Hwang ,  Kichul Hong ,  Hyang Lee ,  Chang Ahn ,  Kyong Kang ,  JeongSam Son

    IPC分类号： H01M2/08 ,  H01M2/02

    CPC分类号： H01M2/0257 ,  H01M2/0277 ,  H01M2/0285 ,  H01M2/0287 ,  H01M2/0292 ,  H01M10/0525 ,  H01M2002/0297

    摘要： Provided is a secondary battery having an electrode assembly installed in a battery case made up of a laminated sheet composed of an outer coating layer of a polymer film, a barrier layer of a metal foil and an inner sealant layer of a polyolefin material, wherein the metal foil of the barrier layer is formed of an aluminum alloy, the outer coating layer is formed of polyethylene naphthalate (PEN) and/or the outer surface of the outer coating layer is provided with a polyethylene naphthalate (PET) layer, and wherein the battery has a nail penetration resistance force of more than 6.5 kgf. The battery in accordance with the present invention exhibits further improved safety due to the ability to significantly reduce the probability of invasion, ignition or explosion as compared to conventional batteries, even when the battery is exposed to external physical impact or is pressed by sharp objects.

    摘要翻译： 本发明提供一种二次电池，其具有安装在由聚合物膜的外涂层，金属箔的阻挡层和聚烯烃材料的内密封层构成的层叠片构成的电池壳体中的电极组件，其中， 阻挡层的金属箔由铝合金形成，外涂层由聚萘二甲酸乙二醇酯（PEN）形成，和/或外涂层的外表面设置有聚萘二甲酸乙二醇酯（PET）层，其中， 电池具有超过6.5 kgf的指甲穿透阻力。 与常规电池相比，即使当电池暴露于外部物理冲击或被尖锐物体按压时，由于能够显着降低入侵，点燃或爆炸的可能性，本发明的电池进一步提高了安全性。

    Battery having specific package structure
    2.
    发明申请
    Battery having specific package structure 有权
    电池具有特定的封装结构

    公开(公告)号：US20050191549A1

    公开(公告)日：2005-09-01

    申请号：US11044757

    申请日：2005-01-27

    申请人： Hee Kang ,  Hyang Lee ,  Oh Hyun ,  Chang Ahn ,  Sung-Min Hwang

    发明人： Hee Kang ,  Hyang Lee ,  Oh Hyun ,  Chang Ahn ,  Sung-Min Hwang

    IPC分类号： H01M2/02 ,  H01M2/08 ,  H01M2/30 ,  H01M10/04 ,  H01M10/05 ,  H01M10/0585 ,  H01M10/0587 ,  H01M10/38 ,  H01M10/42

    CPC分类号： H01M2/021 ,  H01M10/04 ,  H01M10/058 ,  H01M10/425

    摘要： The present invention provides a battery having a structure for increasing the power storage capacity and output thereof In accordance with the present invention, in a battery comprising an electrode assembly including anode plates, cathode plates and separators; and a battery case, both side bonding portions of which are folded toward adjacent sides thereof, for accommodating the electrode assembly and a designated amount of electrolyte, and sealing the electrode assembly such that two electrode terminals connected to corresponding electrode taps of the anode and cathode plates of the electrode assembly are exposed to the outside, an upper bonding portion of the battery case is folded toward the upper end of the battery case, and/or common portions of the upper bonding portion and both side portions of the battery case are cut off, and/or inner corners corresponding to the upper bonding portion have larger radiuses of curvature, and/or receipt portions for receiving the electrode assembly are respectively formed in upper and lower bodies of the battery case. The battery having the above structure has high power storage capacity and output at the same size of the battery package, and high sealing capacity and safety.

    摘要翻译： 本发明提供一种具有增加蓄电能力和输出结构的电池。根据本发明，在包括阳极板，阴极板和隔板的电极组件的电池中， 以及电池壳体，其两侧接合部分朝向其相邻侧面折叠，用于容纳电极组件和指定量的电解质，并且密封电极组件，使得连接到阳极和阴极的相应电极抽头的两个电极端子 电极组件的板暴露于外部，电池壳体的上接合部分朝向电池壳体的上端折叠，和/或电池壳体的上接合部分和两侧部分的共同部分被切割 和/或对应于上部接合部分的内角具有较大的曲率半径，和/或用于接收电极组件的接收部分别形成在电池壳体的上部和下部主体中。 具有上述结构的电池具有高的蓄电容量和与电池组件相同尺寸的输出，并且具有高密封能力和安全性。

    DEVICE FOR FOLDING ELECTRODE ASSEMBLY
    3.
    发明申请
    DEVICE FOR FOLDING ELECTRODE ASSEMBLY 有权
    用于折叠电极组件的装置

    公开(公告)号：US20130209848A1

    公开(公告)日：2013-08-15

    申请号：US13809416

    申请日：2011-07-13

    申请人： Ki Hong Min ,  Sung-Min Hwang ,  Jihoon Cho ,  Changmin Han ,  Ki Hun Song ,  Sang Hyuck Park ,  Han Sung Lee ,  Byeong Geun Kim ,  Tae-Yoon Jung ,  JeongSam Son ,  Su Taek Jung ,  Hyun Suk Baik

    发明人： Ki Hong Min ,  Sung-Min Hwang ,  Jihoon Cho ,  Changmin Han ,  Ki Hun Song ,  Sang Hyuck Park ,  Han Sung Lee ,  Byeong Geun Kim ,  Tae-Yoon Jung ,  JeongSam Son ,  Su Taek Jung ,  Hyun Suk Baik

    IPC分类号： H01M10/04

    CPC分类号： H01M10/0431 ,  B65H51/20 ,  B65H54/10 ,  B65H59/38 ,  H01M4/88 ,  H01M10/0404 ,  H01M10/0459 ,  H01M10/0525 ,  H01M10/0583 ,  H01M2010/0495

    摘要： Disclosed herein is a folding device to manufacture a stacked/folded type electrode assembly having unit cells sequentially stacked in a state in which a separation film is disposed between the respective unit cells, the folding device including a web supply unit to supply a web having plate-shaped unit cells arranged at a top of a separation film at predetermined intervals, a winding jig to rotate the unit cells while holding a first one of the unit cells of the web so that the unit cells are sequentially stacked in a state in which the separation film is disposed between the respective unit cells, and a rotary shaft compensation unit to compensate for the position of a rotary shaft of the winding jig in an advancing direction of the web (X-axis direction), wherein the rotary shaft compensation unit periodically changes the position of the rotary shaft to compensate for the change in X-axis velocity (Vx) of the web caused during winding of the plate-shaped unit cells, thereby uniformly maintaining tension of the web.

    摘要翻译： 本文公开了一种折叠装置，用于制造具有在分离膜设置在各个单电池之间的状态下依次堆叠的单元电池的叠层/折叠型电极组件，该折叠装置包括用于供应具有板 形状的单元电池以预定的间隔布置在分离膜的顶部;卷绕夹具，用于在保持幅材的单元电池的第一个单元的同时旋转单元电池，使得单元电池在其中 分离膜设置在各个单电池之间，以及旋转轴补偿单元，用于在卷筒纸的前进方向（X轴方向）上补偿卷绕夹具的旋转轴的位置，其中旋转轴补偿单元周期性地 改变旋转轴的位置以补偿在板状单元电池卷绕期间纤维网的X轴速度（Vx）的变化，从而均匀化 保持网络的张力。

    Semiconductor devices including vertical cell strings that are commonly connected
    6.
    发明授权
    Semiconductor devices including vertical cell strings that are commonly connected 有权
    包括通常连接的垂直单元串的半导体器件

    公开(公告)号：US09431420B2

    公开(公告)日：2016-08-30

    申请号：US14728574

    申请日：2015-06-02

    申请人： Sung-Min Hwang

    发明人： Sung-Min Hwang

    IPC分类号： H01L27/115 ,  G11C16/04 ,  G11C16/12 ,  G11C16/34

    CPC分类号： H01L27/11582 ,  G11C16/0483 ,  G11C16/12 ,  G11C16/3427 ,  G11C2216/02 ,  H01L27/11565 ,  H01L27/11573

    摘要： A semiconductor device includes bit lines on a substrate, a gate structure provided between the substrate and the bit lines, a common source line provided between the gate structure and the bit lines, and channel structures connecting the bit lines to the common source line. Each of the channel structures may include a plurality of first vertical portions penetrating the gate structure and being connected to the bit lines, a second vertical portion penetrating the gate structure and being connected to the common source line, and a horizontal portion provided between the substrate and the gate structure to connect the first and second vertical portions to each other.

    摘要翻译： 半导体器件包括衬底上的位线，设置在衬底和位线之间的栅极结构，设置在栅极结构和位线之间的公共源极线以及将位线连接到公共源极线的沟道结构。 每个通道结构可以包括穿过栅极结构并连接到位线的多个第一垂直部分，穿过栅极结构并连接到公共源极线的第二垂直部分，以及设置在基板之间的水平部分 以及将第一和第二垂直部彼此连接的栅极结构。

    Three dimensional semiconductor memory devices and methods of fabricating the same
    7.
    发明授权
    Three dimensional semiconductor memory devices and methods of fabricating the same 有权
    三维半导体存储器件及其制造方法

    公开(公告)号：US08729622B2

    公开(公告)日：2014-05-20

    申请号：US13276682

    申请日：2011-10-19

    申请人： Hui-Chang Moon ,  Sung-Min Hwang ,  Woonkyung Lee

    发明人： Hui-Chang Moon ,  Sung-Min Hwang ,  Woonkyung Lee

    IPC分类号： H01L29/792

    CPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L29/7926

    摘要： A three dimensional semiconductor memory device has a stacked structure including cell gates stacked therein that are insulated from each other and first string selection gates laterally separated from each other, vertical active patterns extending through the first string selection gates, multi-layered dielectric layers between sidewalls of the vertical active patterns and the cell gates and between the sidewalls of the vertical active patterns and the first string selection gates, and at least one first supplement conductive pattern. The first string selection gates are disposed over an uppermost cell gate of the cell gates. Each vertical active pattern extends through each of the cell gates stacked under the first string selection gates. The first supplement conductive pattern is in contact with a sidewall of one of the first string selection gates.

    摘要翻译： 三维半导体存储器件具有层叠结构，其包括彼此绝缘的单元栅极和彼此横向分离的第一串选择栅极，延伸穿过第一串选择栅极的垂直有源图案，侧壁之间的多层电介质层 垂直有源图案和单元栅极之间以及垂直有源图案和第一串选择栅极的侧壁之间以及至少一个第一补充导电图案。 第一串选择栅极设置在单元栅极的最上面的单元栅极上。 每个垂直有源图案延伸穿过堆叠在第一串选择门下的每个单元门。 第一补充导电图案与第一串选择门之一的侧壁接触。

    Semiconductor device and method of fabricating the same
    8.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08592912B2

    公开(公告)日：2013-11-26

    申请号：US13106481

    申请日：2011-05-12

    申请人： Sung-Min Hwang ,  Hansoo Kim ,  Wonseok Cho ,  Jaehoon Jang ,  Jae-Joo Shim

    发明人： Sung-Min Hwang ,  Hansoo Kim ,  Wonseok Cho ,  Jaehoon Jang ,  Jae-Joo Shim

    IPC分类号： H01L29/78

    CPC分类号： H01L27/0207 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

    摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: a plurality of conductive patterns stacked on a substrate and spaced apart from each other and a pad pattern including a flat portion extending in a first direction parallel to the substrate from one end of any one of the plurality of conductive patterns, and a landing sidewall portion extending upward from a top surface of the flat portion, wherein a width of a portion of the landing sidewall portion in a second direction parallel to the substrate and perpendicular to the first direction is less than a width of the flat portion.

    摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括：多个导电图案，其堆叠在基板上并彼此间隔开;以及焊盘图案，其包括从多个导电图案中的任一个的一端平行于基板延伸的平坦部分， 以及从所述平坦部分的顶表面向上延伸的着陆侧壁部分，其中所述着陆侧壁部分在平行于所述基板并且垂直于所述第一方向的第二方向上的一部分的宽度小于所述平坦部分的宽度 。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130168800A1

    公开(公告)日：2013-07-04

    申请号：US13717803

    申请日：2012-12-18

    申请人： Jae-Joo Shim ,  Han-Soo Kim ,  Woon-Kyung Lee ,  Ju-Young Lim ,  Sung-Min Hwang

    发明人： Jae-Joo Shim ,  Han-Soo Kim ,  Woon-Kyung Lee ,  Ju-Young Lim ,  Sung-Min Hwang

    IPC分类号： H01L29/06

    CPC分类号： H01L29/0657 ,  H01L27/0207 ,  H01L27/1157 ,  H01L27/11582

    摘要： Provided is a semiconductor device that includes first and second isolation patterns disposed on a substrate. Alternately stacked interlayer insulating patterns and a conductive patterns are disposed on a surface of the substrate between the first and second isolation patterns. A support pattern penetrates the conductive patterns and the interlayer insulating patterns and has a smaller width than the first and second isolation patterns. First and second vertical structures are disposed between the first isolation and the support pattern and penetrate the conductive patterns and the interlayer insulating patterns. A second vertical structure is disposed between the second isolation pattern and the support pattern and penetrates the conductive patterns and the interlayer insulating patterns. A distance between top and bottom surfaces of the support pattern is greater than a distance between a bottom surface of the support pattern and the surface of the substrate.

    摘要翻译： 提供了包括设置在基板上的第一和第二隔离图案的半导体器件。 交替层叠的层间绝缘图案和导电图案设置在第一和第二隔离图案之间的基板的表面上。 支撑图案穿透导电图案和层间绝缘图案，并且具有比第一和第二隔离图案更小的宽度。 第一和第二垂直结构设置在第一隔离和支撑图案之间并且穿透导电图案和层间绝缘图案。 第二垂直结构设置在第二隔离图案和支撑图案之间并且穿透导电图案和层间绝缘图案。 支撑图案的顶表面和底表面之间的距离大于支撑图案的底表面和基底表面之间的距离。