公开(公告)号：US08577308B2

公开(公告)日：2013-11-05

申请号：US12268627

申请日：2008-11-11

申请人： Sung-Tae Choi ,  Jung-Han Choi ,  Young-Hwan Kim ,  Dong-Hyun Lee ,  Hong-Yi Kim ,  Ki-Chan Eun ,  Chul-Soon Park

发明人： Sung-Tae Choi ,  Jung-Han Choi ,  Young-Hwan Kim ,  Dong-Hyun Lee ,  Hong-Yi Kim ,  Ki-Chan Eun ,  Chul-Soon Park

IPC分类号： H04B7/06

CPC分类号： H04B7/0617 ,  H04B7/0682

摘要： Disclosed are a beamformer and a beamforming method. The beamformer includes a plurality of dividers, each of which divides an input signal along a plurality of paths, an input switch which selects one of the dividers such that the input signal is input to the selected divider, a phase shifter which shifts phases of respective output signals from the divider, and an output switch which transmits the output signals from the phase shifter to an antenna.

摘要翻译： 公开了波束成形器和波束成形方法。 波束形成器包括多个分频器，每个分频器沿着多个路径分割输入信号;输入开关，其选择一个分频器，使得输入信号被输入到所选择的分频器;移相器，其相移 来自分频器的输出信号，以及将相移器的输出信号发送到天线的输出开关。

公开(公告)号：US20130194754A1

公开(公告)日：2013-08-01

申请号：US13877378

申请日：2011-10-05

申请人： Dong-Yun Jung ,  Sung-Tae Choi ,  Young-Hwan Kim ,  Jung-Han Choi ,  Ji-Hoon Kim ,  Jei-Young Lee ,  Dong-Hyun Lee

发明人： Dong-Yun Jung ,  Sung-Tae Choi ,  Young-Hwan Kim ,  Jung-Han Choi ,  Ji-Hoon Kim ,  Jei-Young Lee ,  Dong-Hyun Lee

IPC分类号： H05K1/02 ,  H05K1/18

CPC分类号： H05K1/0216 ,  H01L23/3677 ,  H01L23/49822 ,  H01L23/5385 ,  H01L23/66 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0655 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15313 ,  H01L2924/15323 ,  H01L2924/15333 ,  H01L2924/30107 ,  H05K1/0204 ,  H05K1/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An apparatus for a single chip package using Land Grid Array (LGA) coupling is provided. The apparatus includes a multi-layer substrate, at least one integrated circuit chip, and a Printed Circuit Board (PCB). The a multi-layer substrate has at least one substrate layer, has at least one first chip region and at least one second chip region in a lowermost substrate layer, configures a transmission line transition of a vertical structure for transmitting a signal from at least one integrated circuit chip coupled in the first chip region in a coaxial shape or in a form of a Co-Planar Waveguide guide (CPW), and has an LGP coupling pad for connecting with a Printed Circuit Board (PCB) in the lowermost layer. The at least one integrated circuit chip is coupled in the first chip region and the second chip region. The PCB is connected with the multi-layer substrate using the LGA coupling via the LGA coupling pad.

摘要翻译： 提供了一种使用Land Grid Array（LGA）耦合的单芯片封装的设备。 该装置包括多层基板，至少一个集成电路芯片和印刷电路板（PCB）。 多层衬底具有至少一个衬底层，在最下层衬底层中具有至少一个第一芯片区域和至少一个第二芯片区域，构成垂直结构的传输线转换，以从至少一个 集成电路芯片以同轴形状或Co-Planar波导引导件（CPW）的形式耦合在第一芯片区域中，并且具有用于与最下层中的印刷电路板（PCB）连接的LGP耦合焊盘。 所述至少一个集成电路芯片耦合在所述第一芯片区域和所述第二芯片区域中。 PCB使用LGA耦合通过LGA耦合垫与多层基板连接。

公开(公告)号：US08409887B2

公开(公告)日：2013-04-02

申请号：US12713846

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/52 ,  H01L27/3265 ,  H01L2227/323

摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

公开(公告)号：US08384087B2

公开(公告)日：2013-02-26

申请号：US12805995

申请日：2010-08-27

申请人： Yong-Duck Son ,  Ki-Yong Lee ,  Joon-Hoo Choi ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung ,  Dong-Hyun Lee ,  Byung-Soo So ,  Hyun-Woo Koo ,  Ivan Maidanchuk ,  Jong-Won Hong ,  Heung-Yeol Na ,  Seok-Rak Chang

发明人： Yong-Duck Son ,  Ki-Yong Lee ,  Joon-Hoo Choi ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung ,  Dong-Hyun Lee ,  Byung-Soo So ,  Hyun-Woo Koo ,  Ivan Maidanchuk ,  Jong-Won Hong ,  Heung-Yeol Na ,  Seok-Rak Chang

IPC分类号： H01L27/14

CPC分类号： H01L29/66757 ,  H01L27/1277 ,  H01L27/3262

摘要： A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

摘要翻译： 薄膜晶体管包括衬底，衬底上的缓冲层，包括源极/漏极区域和缓冲层上的沟道区域的半导体层，对应于沟道区域的栅极绝缘层，对应于沟道区域的栅电极 以及与半导体层电连接的源极/漏极。 沟道区域的多晶硅层可以仅包括低角度晶界，并且可以在离开沟道区域的半导体层的区域中设置高角度晶界。

公开(公告)号：US08318523B2

公开(公告)日：2012-11-27

申请号：US12405466

申请日：2009-03-17

申请人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

发明人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

IPC分类号： H01L29/04

CPC分类号： H01L29/78615 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757

摘要： A thin film transistor, a method of fabricating the same, and an OLED display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and having a channel region, source and drain regions, and a body contact region, a gate insulating layer disposed on the semiconductor layer to expose the body contact region, a silicon layer disposed on the gate insulating layer and contacting the body contact region exposed by the gate insulating layer, a gate electrode disposed on the silicon layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected with the source and drain regions, wherein the body contact region is formed in an edge region of the semiconductor layer.

摘要翻译： 薄膜晶体管，其制造方法和具有该薄膜晶体管的OLED显示装置。 薄膜晶体管包括基板，设置在基板上并具有沟道区，源极和漏极区以及体接触区的半导体层，设置在半导体层上以露出本体接触区的栅绝缘层，硅 层，设置在栅极绝缘层上并与由栅极绝缘层暴露的体接触区域接触，设置在硅层上的栅极电极，设置在栅电极上的层间绝缘层，以及设置在层间绝缘层上的源电极和漏电极 并且与所述源极和漏极区电连接，其中所述体接触区域形成在所述半导体层的边缘区域中。

公开(公告)号：US20120000986A1

公开(公告)日：2012-01-05

申请号：US13009279

申请日：2011-01-19

申请人： Min-Jae JEONG ,  Ki-Yong Lee ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo Soo ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

发明人： Min-Jae JEONG ,  Ki-Yong Lee ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo Soo ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

IPC分类号： F24D5/00

CPC分类号： C23C16/4481 ,  C23C16/45525 ,  C23C16/52

摘要： A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.

摘要翻译： 一种用于沉积设备的罐和使用其的沉积设备，更具体地，涉及一种用于沉积设备的罐，其可以提供均匀量的源材料，所述源材料包含在供应到沉积室中的反应气体中，并且提高了供应 源材料和使用该罐的沉积装置。 沉积设备包括沉积室; 向所述沉积室供应反应气体的罐; 以及载体气体供给器，用于将载气供应到罐中，其中罐包括主体，加热单元加热主体，温度测量单元设置在主体下方。

公开(公告)号：US20110227078A1

公开(公告)日：2011-09-22

申请号：US13034818

申请日：2011-02-25

申请人： Byoung-Keon PARK ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung

发明人： Byoung-Keon PARK ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung

IPC分类号： H01L51/56 ,  H01L51/52

CPC分类号： H01L27/3262 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/326

摘要： A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

摘要翻译： 一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，第一绝缘层包括在第一半导体层和第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。

公开(公告)号：US20110220878A1

公开(公告)日：2011-09-15

申请号：US12926210

申请日：2010-11-02

申请人： Tak-Young Lee ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Young-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Tak-Young Lee ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Young-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L51/00 ,  H01L29/772 ,  H01L21/336

CPC分类号： H01L29/78645

摘要： A thin film transistor (TFT) includes a substrate, and an active region on the substrate including source and drain regions at opposing ends of the active region, a lightly doped region adjacent to at least one of the source region and the drain region, a plurality of channel regions, and a highly doped region between two channel regions of the plurality of channel regions. The TFT includes a gate insulation layer on the active region, and a multiple gate electrode having a plurality of gate electrodes on the gate insulation layer, the plurality of channel regions being disposed below corresponding gate electrodes, and the source region and the drain region being disposed adjacent to outermost portions of the multiple gate electrode. The TFT includes a first interlayer insulation layer on the multiple gate electrode, and source and drain electrodes extending through the first interlayer insulation layer and contacting the respective source and drain regions.

摘要翻译： 薄膜晶体管（TFT）包括衬底，并且衬底上的有源区域包括在有源区的相对端处的源极和漏极区域，与源区域和漏极区域中的至少一个相邻的轻掺杂区域， 多个沟道区，以及多个沟道区的两个沟道区之间的高掺杂区。 TFT包括在有源区上的栅极绝缘层和在栅绝缘层上具有多个栅电极的多栅电极，多个沟道区设置在相应的栅极下方，源区和漏区为 邻近多栅电极的最外部设置。 TFT包括在多栅电极上的第一层间绝缘层，以及延伸穿过第一层间绝缘层并与相应的源极和漏极区接触的源极和漏极。

公开(公告)号：US20110114963A1

公开(公告)日：2011-05-19

申请号：US12805995

申请日：2010-08-27

申请人： Yong-Duck Son ,  Ki-Yong Lee ,  Joon-Hoo Choi ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung ,  Dong-Hyun Lee ,  Byung-Soo So ,  Hyun-Woo Koo ,  Ivan Maidanchuk ,  Jong-Won Hong ,  Heung-Yeol Na ,  Seok-Rak Chang

发明人： Yong-Duck Son ,  Ki-Yong Lee ,  Joon-Hoo Choi ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung ,  Dong-Hyun Lee ,  Byung-Soo So ,  Hyun-Woo Koo ,  Ivan Maidanchuk ,  Jong-Won Hong ,  Heung-Yeol Na ,  Seok-Rak Chang

IPC分类号： H01L51/52 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66757 ,  H01L27/1277 ,  H01L27/3262

摘要： A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

摘要翻译： 薄膜晶体管包括衬底，衬底上的缓冲层，包括源极/漏极区域和缓冲层上的沟道区域的半导体层，对应于沟道区域的栅极绝缘层，对应于沟道区域的栅电极 以及与半导体层电连接的源极/漏极。 沟道区域的多晶硅层可以仅包括低角度晶界，并且可以在离开沟道区域的半导体层的区域中设置高角度晶界。

公开(公告)号：US07834661B2

公开(公告)日：2010-11-16

申请号：US12210634

申请日：2008-09-15

申请人： Ja-Nam Ku ,  Cheong-Worl Kim ,  Young-Hoon Min ,  Dong-Hyun Lee ,  Il-Jong Song

发明人： Ja-Nam Ku ,  Cheong-Worl Kim ,  Young-Hoon Min ,  Dong-Hyun Lee ,  Il-Jong Song

IPC分类号： H03K19/0175

CPC分类号： H03K19/018571

摘要： A level shifter increase a voltage level of an output signal with relatively lower power consumption by adopting current-starved configuration. The level shifter includes an input unit and a driving unit. The input unit includes a current-starved inverter configured to generate a control signal in response to an input signal and a bias voltage. The input unit is powered by a first power supply voltage. The driving unit generates an output signal in response to the control signal. The output signal has a voltage level higher than the input signal, and the driving unit is powered by a second power supply voltage higher than the first power supply voltage.

摘要翻译： 电平移位器通过采用电流欠压配置，以相对较低的功耗增加输出信号的电压电平。 电平移位器包括输入单元和驱动单元。 输入单元包括被配置为响应于输入信号和偏置电压产生控制信号的电流饥饿逆变器。 输入单元由第一电源电压供电。 驱动单元根据控制信号生成输出信号。 输出信号具有高于输入信号的电压电平，并且驱动单元由比第一电源电压高的第二电源电压供电。