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    Organic semiconductor device and method of fabricating the same
    3.
    发明申请
    Organic semiconductor device and method of fabricating the same 审中-公开
    有机半导体器件及其制造方法

    公开(公告)号：US20070126001A1

    公开(公告)日：2007-06-07

    申请号：US11497057

    申请日：2006-08-01

    申请人： Sung-Yool Choi ,  Min Ki Ryu ,  Ansoon Kim ,  Chil Seong Ah ,  Han Young Yu

    发明人： Sung-Yool Choi ,  Min Ki Ryu ,  Ansoon Kim ,  Chil Seong Ah ,  Han Young Yu

    IPC分类号： H01L29/08

    CPC分类号： G11C13/00 ,  B82Y10/00 ,  G11C13/0014 ,  H01L51/0075

    摘要： An organic semiconductor device and a method of fabricating the same are provided. The device includes: a first electrode; an electron channel layer formed on the first electrode; and a second electrode formed on the electron channel layer, wherein the electron channel layer comprises: a lower organic layer formed on the first electrode; a nano-particle layer formed on the lower organic layer and including predetermined sizes of nano-particles that are spaced a predetermined distance apart from each other; and an upper organic layer formed over the nano-particle layer. Accordingly, a highly integrated organic semiconductor device can be fabricated by a simple fabrication process, and nonuniformity of devices due to threshold voltage characteristics and downsizing of the device can resolved, so that a semiconductor device having excellent performance can be implemented.

    摘要翻译： 提供一种有机半导体器件及其制造方法。 该装置包括：第一电极; 形成在第一电极上的电子通道层; 以及形成在所述电子通道层上的第二电极，其中所述电子通道层包括：形成在所述第一电极上的下部有机层; 形成在下部有机层上并且包括彼此间隔开预定距离的预定尺寸的纳米颗粒的纳米颗粒层; 和在纳米颗粒层上形成的上部有机层。 因此，可以通过简单的制造工艺制造高度集成的有机半导体器件，并且可以解决由于阈值电压特性而导致的器件的不均匀性和器件的小型化，从而可以实现具有优异性能的半导体器件。

    PAD FOR THERMOTHERAPHY
    5.
    发明申请
    PAD FOR THERMOTHERAPHY 审中-公开
    用于热像仪的垫片

    公开(公告)号：US20130041434A1

    公开(公告)日：2013-02-14

    申请号：US13571309

    申请日：2012-08-09

    申请人： Doo Hyeb YOUN ,  Sung-Yool Choi ,  HongKyw Choi ,  Jongyun Kim

    发明人： Doo Hyeb YOUN ,  Sung-Yool Choi ,  HongKyw Choi ,  Jongyun Kim

    IPC分类号： A61N5/06

    CPC分类号： A61N5/0625 ,  A61N2005/0645 ,  A61N2005/0652 ,  A61N2005/0659 ,  A61N2005/0661 ,  A61N2005/0662

    摘要： A pad for thermotherapy includes: a stretchable and flexible substrate; an electrode pattern positioned over the stretchable and flexible substrate, and including a plurality of light source electrodes and a linear electrode connecting the light source electrodes; light sources positioned over the electrode pattern; and a power supply unit for supplying power to the light source, wherein the linear electrode is formed longer than intervals between neighboring light source electrodes and separated from the substrate.

    摘要翻译： 用于热疗的垫包括：可拉伸和柔性基底; 电极图案，其位于所述伸缩性柔性基板上方，并且包括多个光源电极和连接所述光源电极的线状电极; 位于电极图案上的光源; 以及用于向光源供电的电源单元，其中所述线性电极形成得比相邻光源电极之间的间隔长并且与所述衬底分离。

    Resistive memory device and method of fabricating the same
    6.
    发明授权
    Resistive memory device and method of fabricating the same 有权

    公开(公告)号：US08344344B2

    公开(公告)日：2013-01-01

    申请号：US12773228

    申请日：2010-05-04

    申请人： Sung-Yool Choi

    发明人： Sung-Yool Choi

    IPC分类号： H01L29/72

    CPC分类号： H01L45/00 ,  H01L27/24

    摘要： Provided are resistive memory devices and methods of fabricating the same. The resistive memory devices and the methods are advantageous for high integration because they can provide a multilayer memory cell structure. Also, the parallel conductive lines of adjacent layers do not overlap each other in the vertical direction, thus reducing errors in program/erase operations.

    Active metamaterial device and manufacturing method of the same
    7.
    发明授权
    Active metamaterial device and manufacturing method of the same 有权
    活性超材料器件及其制造方法相同

    公开(公告)号：US08890767B2

    公开(公告)日：2014-11-18

    申请号：US13431142

    申请日：2012-03-27

    申请人： Choon Gi Choi ,  Muhan Choi ,  Sung-Yool Choi

    发明人： Choon Gi Choi ,  Muhan Choi ,  Sung-Yool Choi

    IPC分类号： G02B27/00 ,  H01Q15/00

    CPC分类号： H01Q15/0086 ,  Y10S977/734

    摘要： Provided are an active metamaterial device operating at a high speed and a manufacturing method thereof. The active metamaterial device includes a first dielectric layer, a lower electrode disposed on the first dielectric layer, a second dielectric layer disposed on the lower electrode, metamaterial patterns disposed on the second dielectric layer, a couple layer disposed on the metamaterial patterns and the second dielectric layer, a third dielectric layer disposed on the couple layer, and an upper electrode disposed on the third dielectric layer.

    摘要翻译： 提供了以高速运转的活性超材料装置及其制造方法。 活性超材料装置包括第一电介质层，设置在第一电介质层上的下电极，设置在下电极上的第二电介质层，设置在第二电介质层上的超材料图案，设置在超材料图案上的耦合层，第二介电层 电介质层，设置在所述耦合层上的第三电介质层，以及设置在所述第三电介质层上的上电极。

    METHOD FOR FORMING GRAPHENE USING LASER BEAM, GRAPHENE SEMICONDUCTOR MANUFACTURED BY THE SAME, AND GRAPHENE TRANSISTOR HAVING GRAPHENE SEMICONDUCTOR
    8.
    发明申请
    METHOD FOR FORMING GRAPHENE USING LASER BEAM, GRAPHENE SEMICONDUCTOR MANUFACTURED BY THE SAME, AND GRAPHENE TRANSISTOR HAVING GRAPHENE SEMICONDUCTOR 审中-公开
    使用激光束形成石墨的方法，由其制造的石墨半导体和具有石墨半导体的石墨晶体管

    公开(公告)号：US20120068161A1

    公开(公告)日：2012-03-22

    申请号：US13233553

    申请日：2011-09-15

    申请人： Keon-Jae LEE ,  In-Sung Choi ,  Sung-Yool Choi ,  Byung-Hee Hong

    发明人： Keon-Jae LEE ,  In-Sung Choi ,  Sung-Yool Choi ,  Byung-Hee Hong

    IPC分类号： H01L29/66 ,  B01J19/12 ,  H01L21/268 ,  B82Y40/00 ,  B82Y30/00

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/188 ,  H01L21/268

    摘要： A method for forming graphene includes introducing a substrate and a carbon-containing reactant source into a chamber, and radiating a laser beam onto the substrate to decompose the carbon-containing reactant source and form graphene over the substrate using carbon atoms generated by decomposition of the carbon-containing reactant source. A carbon-containing gas (methane) decomposes upon radiation of a laser beam. The carbon-containing gas has a decomposition rate on the order of femtoseconds and the laser beam has a pulse on the order of nanoseconds or more. The graphene is grown in a single layer along the surface of the substrate. Then, the graphene is selectively patterned using a laser beam to form a desired pattern.

    摘要翻译： 用于形成石墨烯的方法包括将基底和含碳反应物源引入室中，并且将激光束辐射到基底上以分解含碳反应物源，并使用由分解产生的碳原子在基底上形成石墨烯 含碳反应物源。 含碳气体（甲烷）在激光束的辐射下分解。 含碳气体具有飞秒级的分解率，激光束具有大约数毫安以上的脉冲。 石墨烯沿着衬底的表面生长在单层中。 然后，使用激光束选择性地图案化石墨烯以形成期望的图案。

    Resistive memory device and method for fabricating the same
    10.
    发明授权
    Resistive memory device and method for fabricating the same 有权
    电阻式存储器件及其制造方法

    公开(公告)号：US08203140B2

    公开(公告)日：2012-06-19

    申请号：US12835265

    申请日：2010-07-13

    申请人： Sung-Yool Choi

    发明人： Sung-Yool Choi

    IPC分类号： H01L29/08

    CPC分类号： H01L45/10 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608

    摘要： A resistive memory device is provided. The resistive memory device includes a bottom electrode, a resistance-variable layer, and a top electrode. The resistance-variable layer is disposed on the bottom electrode. The top electrode is disposed on the resistance-variable layer. The resistance-variable layer includes a conductive polymer layer that reacts with the top electrode to form an oxide layer.

    摘要翻译： 提供了一种电阻式存储器件。 电阻式存储器件包括底部电极，电阻变化层和顶部电极。 电阻变化层设置在底部电极上。 顶部电极设置在电阻变化层上。 电阻变化层包括与顶部电极反应形成氧化物层的导电聚合物层。