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1.发明授权公开(公告)号：US09728439B2
公开(公告)日：2017-08-08
申请号：US12770075
申请日：2010-04-29
IPC分类号： B32B38/00 , H01L21/683 , B29B17/02 , B32B38/10 , B32B43/00
CPC分类号： H01L21/6835 , B29B17/02 , B32B38/10 , B32B43/006 , C09J2205/302 , H01L2221/68327 , H01L2221/6834 , H01L2924/30105 , Y10T156/11 , Y10T156/1153 , Y10T156/1168 , Y10T156/1189 , Y10T156/19 , Y10T156/1972 , Y10T428/31678
摘要： New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a polymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened to allow the wafers to slide apart at the appropriate stage in the fabrication process.
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2.发明申请HIGH-TEMPERATURE, SPIN-ON, BONDING COMPOSITIONS FOR TEMPORARY WAFER BONDING USING SLIDING APPROACH 审中-公开高温，旋转，使用滑动方法进行临时波形粘结的粘结组合物公开(公告)号：US20100206479A1
公开(公告)日：2010-08-19
申请号：US12770075
申请日：2010-04-29
CPC分类号： H01L21/6835 , B29B17/02 , B32B38/10 , B32B43/006 , C09J2205/302 , H01L2221/68327 , H01L2221/6834 , H01L2924/30105 , Y10T156/11 , Y10T156/1153 , Y10T156/1168 , Y10T156/1189 , Y10T156/19 , Y10T156/1972 , Y10T428/31678
摘要： New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a polymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened to allow the wafers to slide apart at the appropriate stage in the fabrication process.
摘要翻译： 提供了使用这些组合物作为粘合组合物的新组合物和方法。 组合物包含分散或溶解在溶剂系统中的聚合物，并且可用于将活性晶片结合到载体晶片或基底，以在随后的处理和处理期间有助于保护活性晶片及其活性位点。 组合物形成化学和耐热的粘合层，但是也可以软化以使晶片在制造过程中的适当阶段分开。
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3.发明申请HIGH-TEMPERATURE, SPIN-ON, BONDING COMPOSITIONS FOR TEMPORARY WAFER BONDING USING SLIDING APPROACH 审中-公开高温，旋转，使用滑动方法进行临时波形粘结的粘结组合物公开(公告)号：US20080200011A1
公开(公告)日：2008-08-21
申请号：US11763253
申请日：2007-06-14
IPC分类号： H01L21/30
CPC分类号： H01L21/6835 , B29B17/02 , B32B38/10 , B32B43/006 , C09J2205/302 , H01L2221/68327 , H01L2221/6834 , H01L2924/30105 , Y10T156/11 , Y10T156/1153 , Y10T156/1168 , Y10T156/1189 , Y10T156/19 , Y10T156/1972 , Y10T428/31678
摘要： New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a polymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened to allow the wafers to slide apart at the appropriate stage in the fabrication process.
摘要翻译： 提供了使用这些组合物作为粘合组合物的新组合物和方法。 组合物包含分散或溶解在溶剂系统中的聚合物，并且可用于将活性晶片结合到载体晶片或基底，以在随后的处理和处理期间有助于保护活性晶片及其活性位点。 组合物形成化学和耐热的粘合层，但是也可以软化以使晶片在制造过程中的适当阶段分开。
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4.发明授权公开(公告)号：US07695890B2
公开(公告)日：2010-04-13
申请号：US11470520
申请日：2006-09-06
申请人： Xing-Fu Zhong , Jyoti K. Malhotra , Chenghong Li
发明人： Xing-Fu Zhong , Jyoti K. Malhotra , Chenghong Li
CPC分类号： G03F7/0382 , G03F7/0752 , H01L21/3081 , Y10S430/108 , Y10S430/115
摘要： New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes copolymers prepared from styrene, acrylonitrile, and epoxy-containing monomers. The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
摘要翻译： 提供了在制造半导体和MEMS器件期间使用的新型光致抗蚀剂。 底漆层优选包含溶解或分散在溶剂体系中的硅烷。 光致抗蚀剂层包括由苯乙烯，丙烯腈和含环氧基的单体制备的共聚物。 光致抗蚀剂层包括光致酸发生剂，并且优选为负性作用。
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5.发明申请SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 有权用于微电子基板湿蚀刻加工的旋转保护涂层公开(公告)号：US20060240181A1
公开(公告)日：2006-10-26
申请号：US11428123
申请日：2006-06-30
申请人： Chenghong Li , Kimberly Ruben , Tony Flaim
发明人： Chenghong Li , Kimberly Ruben , Tony Flaim
CPC分类号： B81C1/00539 , C03C15/00 , C03C2218/355 , C09D125/12 , H01L21/3081 , H01L21/31144 , Y10T428/265 , Y10T428/3154 , Y10T428/31544 , Y10T428/31612 , Y10T428/31663 , Y10T428/31678 , Y10T428/31935
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和任选的其它加成聚合单体如（甲基）丙烯酸酯单体，乙烯基苄基氯和马来酸或富马酸的二酯制备的热塑性共聚物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。
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6.发明授权Spin-on protective coatings for wet-etch processing of microelectronic substrates 有权用于微电子衬底的湿法蚀刻加工的旋涂保护涂层公开(公告)号：US08202442B2
公开(公告)日：2012-06-19
申请号：US11856552
申请日：2007-09-17
申请人： Chenghong Li , Kimberly A. Yess , Tony D. Flaim
发明人： Chenghong Li , Kimberly A. Yess , Tony D. Flaim
CPC分类号： B81C1/00539 , C03C15/00 , C03C2218/355 , C09D125/12 , H01L21/3081 , H01L21/31144 , Y10T428/265 , Y10T428/3154 , Y10T428/31544 , Y10T428/31612 , Y10T428/31663 , Y10T428/31678 , Y10T428/31935
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和任选的其它加成聚合单体如（甲基）丙烯酸酯单体，乙烯基苄基氯和马来酸或富马酸的二酯制备的热塑性共聚物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。
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7.发明申请SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 有权用于微电子基板湿蚀刻加工的旋转保护涂层公开(公告)号：US20080041815A1
公开(公告)日：2008-02-21
申请号：US11856552
申请日：2007-09-17
申请人： Chenghong Li , Kimberly Ruben , Tony Flaim , Kimberly Yess
发明人： Chenghong Li , Kimberly Ruben , Tony Flaim , Kimberly Yess
IPC分类号： H01B13/00
CPC分类号： B81C1/00539 , C03C15/00 , C03C2218/355 , C09D125/12 , H01L21/3081 , H01L21/31144 , Y10T428/265 , Y10T428/3154 , Y10T428/31544 , Y10T428/31612 , Y10T428/31663 , Y10T428/31678 , Y10T428/31935
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和任选的其它加成聚合单体如（甲基）丙烯酸酯单体，乙烯基苄基氯和马来酸或富马酸的二酯制备的热塑性共聚物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。
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8.发明申请Spin-on protective coatings for wet-etch processing of microelectronic substrates 有权用于微电子衬底的湿法蚀刻加工的旋涂保护涂层公开(公告)号：US20050158538A1
公开(公告)日：2005-07-21
申请号：US10759448
申请日：2004-01-16
申请人： Chenghong Li , Kimberly Ruben , Tony Flaim
发明人： Chenghong Li , Kimberly Ruben , Tony Flaim
IPC分类号： B32B9/04 , C09D125/12 , H01L21/308 , H01L21/311
CPC分类号： B81C1/00539 , C03C15/00 , C03C2218/355 , C09D125/12 , H01L21/3081 , H01L21/31144 , Y10T428/265 , Y10T428/3154 , Y10T428/31544 , Y10T428/31612 , Y10T428/31663 , Y10T428/31678 , Y10T428/31935
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和任选的其它加成聚合单体如（甲基）丙烯酸酯单体，乙烯基苄基氯和马来酸或富马酸的二酯制备的热塑性共聚物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。
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公开(公告)号：US20100291475A1
公开(公告)日：2010-11-18
申请号：US12464170
申请日：2009-05-12
申请人： Chenghong Li
发明人： Chenghong Li
CPC分类号： G03F7/091 , C08G77/04 , C08G77/045 , C08G77/44 , C09D183/04 , G03F7/0752 , G03F7/11
摘要： The present Invention relates to a novel polymer comprising a unit where S is a siloxane chain or an inorganic/organic hybrid chain; L is a thermally labile group; R1 is alkyl, aryl, alkaryl, —O-L, or 13 O—S; and R2 is alkyl, aryl, alkaryl, S or L; and n is an integer. The invention also relates to compositions comprising the novel polymer and their use.
摘要翻译： 本发明涉及包含其中S为硅氧烷链或无机/有机杂化链的单元的新型聚合物; L是热不稳定组; R 1是烷基，芳基，烷芳基，-O-L或13 O-S; R2是烷基，芳基，烷芳基，S或L; 并且n是整数。 本发明还涉及包含新型聚合物及其用途的组合物。
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10.发明授权Spin-on protective coatings for wet-etch processing of microelectronic substrates 有权用于微电子衬底的湿法蚀刻加工的旋涂保护涂层公开(公告)号：US07758913B2
公开(公告)日：2010-07-20
申请号：US11428123
申请日：2006-06-30
申请人： Chenghong Li , Kimberly A. Ruben , Tony D. Flaim
发明人： Chenghong Li , Kimberly A. Ruben , Tony D. Flaim
IPC分类号： B05D5/12
CPC分类号： B81C1/00539 , C03C15/00 , C03C2218/355 , C09D125/12 , H01L21/3081 , H01L21/31144 , Y10T428/265 , Y10T428/3154 , Y10T428/31544 , Y10T428/31612 , Y10T428/31663 , Y10T428/31678 , Y10T428/31935
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
摘要翻译： 提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和任选的其它加成聚合单体如（甲基）丙烯酸酯单体，乙烯基苄基氯和马来酸或富马酸的二酯制备的热塑性共聚物。 第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。
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