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    Inexpensive electrode materials to facilitate rutile phase titanium oxide
    2.
    发明授权
    Inexpensive electrode materials to facilitate rutile phase titanium oxide 有权
    廉价的电极材料，以促进金红石相氧化钛

    公开(公告)号：US08318572B1

    公开(公告)日：2012-11-27

    申请号：US12708872

    申请日：2010-02-19

    申请人： Sunil Shanker ,  Xiangxin Rui ,  Pragati Kumar ,  Hanhong Chen ,  Toshiyuki Hirota

    发明人： Sunil Shanker ,  Xiangxin Rui ,  Pragati Kumar ,  Hanhong Chen ,  Toshiyuki Hirota

    IPC分类号： H01L21/20 ,  H01L21/8242 ,  H01L21/8234 ,  H01L21/8244 ,  H01L21/3205

    CPC分类号： H01L28/60 ,  C23C16/405 ,  H01L27/10852 ,  H01L28/40

    摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.

    摘要翻译： 本公开提供了制造半导体堆叠和相关设备（诸如电容器和DRAM单元）的方法。 特别地，底部电极具有选择用于晶格匹配特性的材料。 该材料可以由相对廉价的金属氧化物制成，其被处理成具有特定结晶形式的导电但难以产生的氧化物状态; 为了提供一个实例，公开了与用作电介质的金红石相二氧化钛（TiO 2）的生长相容的具体材料，从而导致可预测和可再现的较高介电常数和较低的有效氧化物厚度，因此更大的部分密度 以较低的成本。

    METHODS FOR FORMING HIGH-K CRYSTALLINE FILMS AND RELATED DEVICES
    4.
    发明申请
    METHODS FOR FORMING HIGH-K CRYSTALLINE FILMS AND RELATED DEVICES 有权
    用于形成高K晶体薄膜和相关器件的方法

    公开(公告)号：US20120156889A1

    公开(公告)日：2012-06-21

    申请号：US13334618

    申请日：2011-12-22

    申请人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    发明人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    IPC分类号： H01L21/316

    CPC分类号： H01L28/40 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/60

    摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures.

    摘要翻译： 本公开提供了制造半导体堆叠和相关联的器件（诸如电容器或DRAM单元）的方法。 在这种器件中，高K氧化锆基层可以与基于氮化钛的相对廉价的金属电极一起用作主要电介质。 为了防止在器件形成期间电极的损坏，可以使用薄的阻挡层，在使用高温工艺和（高浓度或剂量）的臭氧试剂之前密封电极（即，产生高K氧化锆 基层）。 在一些实施例中，阻挡层也可以是基于氧化锆的，例如掺杂或未掺杂的无定形氧化锆的薄层。 以这种方式制造器件有助于基于氧化锆和氮化钛形成具有大于40的介电常数的器件，并且通常有助于产生更便宜的，越来越致密的DRAM电池和其它半导体结构。

    Methods for forming high-K crystalline films and related devices
    5.
    发明授权
    Methods for forming high-K crystalline films and related devices 有权
    用于形成高K晶体膜和相关器件的方法

    公开(公告)号：US08809160B2

    公开(公告)日：2014-08-19

    申请号：US13334618

    申请日：2011-12-22

    申请人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra G Malhotra ,  Xiangxin Rui

    发明人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra G Malhotra ,  Xiangxin Rui

    IPC分类号： H01L21/20 ,  H01L21/31 ,  H01L21/02 ,  H01L49/02

    CPC分类号： H01L28/40 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/60

    摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures.

    摘要翻译： 本公开提供了制造半导体堆叠和相关联的器件（诸如电容器或DRAM单元）的方法。 在这种器件中，高K氧化锆基层可以与基于氮化钛的相对廉价的金属电极一起用作主要电介质。 为了防止在器件形成期间电极的损坏，可以使用薄的阻挡层，在使用高温工艺和（高浓度或剂量）的臭氧试剂之前密封电极（即，产生高K氧化锆 基层）。 在一些实施例中，阻挡层也可以是基于氧化锆的，例如掺杂或未掺杂的无定形氧化锆的薄层。 以这种方式制造器件有助于基于氧化锆和氮化钛形成具有大于40的介电常数的器件，并且通常有助于产生更便宜的，越来越致密的DRAM电池和其它半导体结构。

    Method of forming stacked metal oxide layers
    6.
    发明授权
    Method of forming stacked metal oxide layers 有权
    堆叠金属氧化物层的形成方法

    公开(公告)号：US08530322B2

    公开(公告)日：2013-09-10

    申请号：US12970835

    申请日：2010-12-16

    申请人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    发明人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    IPC分类号： H01L21/20

    CPC分类号： H01L28/40 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/60

    摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures.

    摘要翻译： 本公开提供了制造半导体堆叠和相关联的器件（诸如电容器或DRAM单元）的方法。 在这种器件中，高K氧化锆基层可以与基于氮化钛的相对廉价的金属电极一起用作主要电介质。 为了防止在器件形成期间电极的损坏，可以使用薄的阻挡层，在使用高温工艺和（高浓度或剂量）的臭氧试剂之前密封电极（即，产生高K氧化锆 基层）。 在一些实施例中，阻挡层也可以是基于氧化锆的，例如掺杂或未掺杂的无定形氧化锆的薄层。 以这种方式制造器件有助于基于氧化锆和氮化钛形成具有大于40的介电常数的器件，并且通常有助于产生更便宜的，越来越致密的DRAM电池和其它半导体结构。

    METHOD OF FORMING STACKED METAL OXIDE LAYERS
    7.
    发明申请
    METHOD OF FORMING STACKED METAL OXIDE LAYERS 有权
    形成堆叠金属氧化物层的方法

    公开(公告)号：US20120156854A1

    公开(公告)日：2012-06-21

    申请号：US12970835

    申请日：2010-12-16

    申请人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    发明人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    IPC分类号： H01L21/02

    CPC分类号： H01L28/40 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/60

    摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures.

    摘要翻译： 本公开提供了制造半导体堆叠和相关联的器件（诸如电容器或DRAM单元）的方法。 在这种器件中，高K氧化锆基层可以与基于氮化钛的相对廉价的金属电极一起用作主要电介质。 为了防止在器件形成期间电极的损坏，可以使用薄的阻挡层，在使用高温工艺和（高浓度或剂量）的臭氧试剂之前密封电极（即，产生高K氧化锆 基层）。 在一些实施例中，阻挡层也可以是基于氧化锆的，例如掺杂或未掺杂的无定形氧化锆的薄层。 以这种方式制造器件有助于基于氧化锆和氮化钛形成具有大于40的介电常数的器件，并且通常有助于产生更便宜的，越来越致密的DRAM电池和其它半导体结构。

    ENHANCED WORK FUNCTION LAYER SUPPORTING GROWTH OF RUTILE PHASE TITANIUM OXIDE
    8.
    发明申请
    ENHANCED WORK FUNCTION LAYER SUPPORTING GROWTH OF RUTILE PHASE TITANIUM OXIDE 有权
    强化工作功能层支持无氧相氧化钛的生长

    公开(公告)号：US20110204475A1

    公开(公告)日：2011-08-25

    申请号：US12942238

    申请日：2010-11-09

    申请人： Xiangxin Rui ,  Pragati Kumar ,  Hanhong Chen ,  Sandra Malhotra

    发明人： Xiangxin Rui ,  Pragati Kumar ,  Hanhong Chen ,  Sandra Malhotra

    IPC分类号： H01L29/92

    CPC分类号： H01L21/02 ,  B82Y99/00 ,  C01G23/047 ,  C01P2002/72 ,  C23C16/0272 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02186 ,  H01L21/0228 ,  H01L27/1085 ,  H01L28/40

    摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.

    摘要翻译： 本公开提供了制造半导体堆叠和相关设备（诸如电容器和DRAM单元）的方法。 特别地，底部电极具有选择用于晶格匹配特性的材料。 该材料可以由相对廉价的金属氧化物制成，其被处理成具有特定结晶形式的导电但难以产生的氧化物状态; 为了提供一个实例，公开了与用作电介质的金红石相二氧化钛（TiO 2）的生长相容的具体材料，从而导致可预测和可再现的较高介电常数和较低的有效氧化物厚度，因此更大的部分密度 以较低的成本。