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    Doped structures containing diffusion barriers
    2.
    发明授权
    Doped structures containing diffusion barriers 失效
    含有扩散阻挡层的掺杂结构

    公开(公告)号：US06399434B1

    公开(公告)日：2002-06-04

    申请号：US09559880

    申请日：2000-04-26

    申请人： Susan E. Chaloux ,  Johnathan E. Faltermeier ,  Ulrike Gruening ,  Rajarao Jammy ,  Christopher C. Parks ,  Paul Parries ,  Paul A. Ronsheim ,  Jean-Marc Rousseau

    发明人： Susan E. Chaloux ,  Johnathan E. Faltermeier ,  Ulrike Gruening ,  Rajarao Jammy ,  Christopher C. Parks ,  Paul Parries ,  Paul A. Ronsheim ,  Jean-Marc Rousseau

    IPC分类号： H01L218242

    CPC分类号： H01L27/10867 ,  H01L21/28512

    摘要： Semiconductor structures having improved dopant configurations are obtained by use of barrier layers containing silicon, nitrogen, and oxygen atoms and having a thickness of about 5 to 50 Å. A doped semiconductor structure with controlled dopant configuration can be formed by: (a) providing a first semiconductor material region, (b) forming an interface layer comprising silicon, oxygen, and nitrogen on the first region, (c) forming a second semiconductor material region on the interface layer, the second semiconductor material region being on an opposite side of the interface layer from the first semiconductor material region, (d) providing a dopant in the second region, and (e) heating the first and second regions whereby at least a portion of the dopant diffuses from the second region through the interface layer to the first region.

    摘要翻译： 具有改进的掺杂剂构型的半导体结构通过使用包含硅，氮和氧原子并且具有约5至约50埃的厚度的阻挡层来获得。 具有受控掺杂剂配置的掺杂半导体结构可以通过以下方式形成：（a）提供第一半导体材料区域，（b）在第一区域上形成包含硅，氧和氮的界面层，（c）形成第二半导体材料 区域，所述第二半导体材料区域在与所述第一半导体材料区域的所述界面层的相对侧上，（d）在所述第二区域中提供掺杂剂，以及（e）加热所述第一区域和所述第二区域， 掺杂剂的至少一部分从第二区域扩散通过界面层到第一区域。