公开(公告)号：US20080006890A1

公开(公告)日：2008-01-10

申请号：US11810835

申请日：2007-06-06

申请人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

发明人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

IPC分类号： H01L29/82

CPC分类号： H01L27/226 ,  G11C11/16 ,  H01L43/08

摘要： In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm2), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t

摘要翻译： 在磁存储装置中，写入周期期间的磁化特性被均匀化，并且有效地执行写入周期。 在磁存储装置中，软磁体被形成为完全或部分地覆盖线，并且在该软磁体的外表面上形成反铁磁层。 此外，磁阻元件设置在线的附近。 假设在软磁体与反铁磁体层之间的界面处的交换耦合能为J（erg / cm 2）的情况下，软磁体的饱和磁化强度为Ms（emu / cc），软磁体的矫顽力为Hc（Oe）。 然后，软磁体的厚度t（cm）被选择为使得t

公开(公告)号：US07826254B2

公开(公告)日：2010-11-02

申请号：US11810835

申请日：2007-06-06

申请人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

发明人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

IPC分类号： G11C11/00

CPC分类号： H01L27/226 ,  G11C11/16 ,  H01L43/08

摘要： In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm2), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t

摘要翻译： 在磁存储装置中，写入周期期间的磁化特性被均匀化，并且有效地执行写入周期。 在磁存储装置中，软磁体被形成为完全或部分地覆盖线，并且在该软磁体的外表面上形成反铁磁层。 此外，磁阻元件设置在线的附近。 假设在软磁体与反铁磁层之间的界面处的交换耦合能为J（erg / cm2）的情况下，软磁体的饱和磁化强度为Ms（emu / cc），矫顽力为 的软磁体是Hc（Oe）。 然后，软磁体的厚度t（cm）被选择为使得t

公开(公告)号：US20070023807A1

公开(公告)日：2007-02-01

申请号：US11430630

申请日：2006-05-04

申请人： Susumu Haratani ,  Takashi Asatani

发明人： Susumu Haratani ,  Takashi Asatani

IPC分类号： H01L29/94

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： In a magnetic memory 1, a magneto-resistivity effect element 4 is disposed adjacently to a wire 5 for producing a writing magnetic field and further a ferromagnetic body 20 is disposed so as to cover at least part of the wire 5 and consequently orient the state X of magnetization of this ferromagnetic body 20 in one direction. According to this invention, it is made possible to homogenize the magnetic property during the course of writing and implement the writing work efficiently.

摘要翻译： 在磁存储器1中，磁电阻效应元件4被布置成与用于产生写入磁场的线5相邻，并且进一步地设置铁磁体20以便覆盖线5的至少一部分，并且因此使状态 该铁磁体20在一个方向上的磁化强度X。 根据本发明，可以在书写过程中使磁特性均匀化并有效地实现书写作业。

公开(公告)号：US07692229B2

公开(公告)日：2010-04-06

申请号：US11430630

申请日：2006-05-04

申请人： Susumu Haratani ,  Takashi Asatani

发明人： Susumu Haratani ,  Takashi Asatani

IPC分类号： H01L29/94

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： In a magnetic memory 1, a magneto-resistivity effect element 4 is disposed adjacently to a wire 5 for producing a writing magnetic field and further a ferromagnetic body 20 is disposed so as to cover at least part of the wire 5 and consequently orient the state X of magnetization of this ferromagnetic body 20 in one direction. According to this invention, it is made possible to homogenize the magnetic property during the course of writing and implement the writing work efficiently.

摘要翻译： 在磁存储器1中，磁电阻效应元件4被布置成与用于产生写入磁场的线5相邻，并且进一步地设置铁磁体20以便覆盖线5的至少一部分，并且因此使状态 该铁磁体20在一个方向上的磁化强度X。 根据本发明，可以在书写过程中使磁特性均匀化并有效地实现书写作业。

公开(公告)号：US08593134B2

公开(公告)日：2013-11-26

申请号：US13042833

申请日：2011-03-08

申请人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Shigeru Shimura

发明人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Shigeru Shimura

IPC分类号： G01R15/20

CPC分类号： G01R15/205 ,  B82Y25/00 ,  G01R33/093

摘要： A current sensor includes first to fourth magneto-resistive elements each having a resistance value; and a compensation current line applying a compensation magnetic field to the magneto-resistive elements. A bridge circuit is formed by the magneto-resistive elements. Resistance values of the first and third magneto-resistive elements change together in one increasing/decreasing direction. Resistance values of the second and fourth magneto-resistive elements change together in the other increasing/decreasing direction. The compensation current is generated by a potential difference between the first and second junctions in response to application of voltage between the third and fourth junctions. The compensation current line includes first to fourth line portions. Each line portion extends in the same direction as the extending direction of the magneto-resistive elements, overlaps the corresponding magneto-resistive elements, and. The current-to-be-detected is detected based on the compensation current.

摘要翻译： 电流传感器包括各自具有电阻值的第一至第四磁阻元件; 以及向磁阻元件施加补偿磁场的补偿电流线。 桥接电路由磁阻元件形成。 第一和第三磁阻元件的电阻值在一个递减方向上一起变化。 第二和第四磁阻元件的电阻值在另一个增加/减小方向上一起变化。 响应于在第三和第四结之间的电压施加，补偿电流由第一和第二结之间的电位差产生。 补偿电流线包括第一至第四线部分。 每个线部分沿与磁阻元件的延伸方向相同的方向延伸，与相应的磁阻元件重叠。 基于补偿电流检测要检测的电流。

公开(公告)号：US07903453B2

公开(公告)日：2011-03-08

申请号：US11705720

申请日：2007-02-13

申请人： Susumu Haratani

发明人： Susumu Haratani

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/15

摘要： A magnetic memory is less susceptible to external magnetic fields and, thus, to writing errors and other adverse effects caused by external magnetic fields. In the magnetic memory, a magnetoresistive element is arranged adjacent to a part of a conductor line. A shield structure is also arranged to shield the magnetoresistive element against external magnetic fields generated by factors other then the part of the line.

摘要翻译： 磁存储器不易受到外部磁场的影响，从而影响写入错误和由外部磁场引起的其他不利影响。 在磁存储器中，磁阻元件被布置成与导体线的一部分相邻。 屏蔽结构还被布置成屏蔽磁阻元件抵抗由线路部分以外的因素产生的外部磁场。

公开(公告)号：US20070187786A1

公开(公告)日：2007-08-16

申请号：US11705720

申请日：2007-02-13

申请人： Susumu Haratani

发明人： Susumu Haratani

IPC分类号： H01L43/00

CPC分类号： H01L43/08 ,  G11C11/15

摘要： A magnetic memory is less susceptible to external magnetic fields and, thus, to writing errors and other adverse effects caused by external magnetic fields. In the magnetic memory, a magnetoresistive element is arranged adjacent to a part of a conductor line. A shield structure is also arranged to shield the magnetoresistive element against external magnetic fields generated by factors other then the part of the line.

摘要翻译： 磁存储器不易受到外部磁场的影响，从而影响写入错误和由外部磁场引起的其他不利影响。 在磁存储器中，磁阻元件被布置成与导体线的一部分相邻。 屏蔽结构还被布置成屏蔽磁阻元件抵抗由线路部分以外的因素产生的外部磁场。

公开(公告)号：US5627012A

公开(公告)日：1997-05-06

申请号：US598913

申请日：1996-02-09

申请人： Junji Tominaga ,  Ryo Inaba ,  Susumu Haratani

发明人： Junji Tominaga ,  Ryo Inaba ,  Susumu Haratani

IPC分类号： B41M5/26 ,  C23C14/06 ,  G11B7/0045 ,  G11B7/243 ,  G11B7/26 ,  C23C14/34

CPC分类号： C23C14/0623 ,  G11B7/243 ,  G11B7/26 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/00454 ,  Y10S430/146

摘要： An optical recording medium is prepared by forming on a substrate a phase change recording layer comprising elements A, B, C and optional D wherein A is silver and/or gold, B is antimony and/or bismuth, C is tellurium and/or selenium, D is indium or a mixture of indium and aluminum and/or phosphorus. Formation of the recording layer is carried out by the step of sputtering an A--C base metal and the step of sputtering a B base metal optionally containing D in this successive order or reverse order; or by the step of sputtering an A--C base metal, the step of sputtering a B base metal, and the step of sputtering a D base metal in this successive order or reverse order. Since the resulting recording layer is already crystallized, the method eliminates a need for extra initialization.

摘要翻译： 通过在基板上形成包含元素A，B，C和任选D的相变记录层来制备光记录介质，其中A是银和/或金，B是锑和/或铋，C是碲和/或硒 ，D是铟或铟和铝和/或磷的混合物。 记录层的形成通过溅射A-C基体金属的步骤和以任选地含有D的B基底金属以相继的顺序或相反的顺序溅射的步骤进行; 或通过溅射A-C基底金属的步骤，溅射B母材的步骤，以及以相继的顺序或相反顺序溅射D母材的步骤。 由于所得记录层已经结晶，所以该方法消除了对额外的初始化的需要。

公开(公告)号：US07405961B2

公开(公告)日：2008-07-29

申请号：US11232976

申请日：2005-09-23

申请人： Susumu Haratani

发明人： Susumu Haratani

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic storage device includes a magnetoresistive element. A pair of side faces of the magnetoresistive element are at least partially opposed to end faces of a pair of open ends of a magnetic yoke. Moreover, the pair of side faces of the magnetoresistive element and the end faces of the pair of open ends of the magnetic yoke have predetermined angles, respectively. Thus, the magnetic storage device can reduce writing current while the magnetic storage device has a small and simple structure.

摘要翻译： 磁存储装置包括磁阻元件。 磁阻元件的一对侧面至少部分地与磁轭的一对开口端的端面相对。 此外，磁阻元件的一对侧面和磁轭的一对开口端的端面分别具有预定的角度。 因此，磁存储装置可以减小写入电流，同时磁存储装置结构简单而简单。

公开(公告)号：US20070133263A1

公开(公告)日：2007-06-14

申请号：US11418351

申请日：2006-05-04

申请人： Susumu Haratani

发明人： Susumu Haratani

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory 1 having a wire 5 extended in a direction of arbitrary decision, an electro-resistivity effect element 4 disposed adjacently to the wire 5, and a counter element side yoke 20B disposed adjacently on the side opposite the magneto-resistivity effect element 4 in the wire 5 and having the thickness of the counter element side yoke 20B so set as to be larger than 50 nm and smaller than 150 nm. Owing to conformity with this invention, this magnetic memory is enabled to homogenize the magnetization property during the course of writing operation and perform the writing work with a low electric current.

摘要翻译： 具有沿任意决定方向延伸的线5的磁性存储器1，与导线5相邻配置的电阻效应元件4以及与磁电阻效应元件相反侧相邻配置的相对元件侧磁轭20B 4，并且具有相对元件侧磁轭20B的厚度设定为大于50nm且小于150nm。 由于符合本发明，这种磁存储器能够在写入操作期间使磁化特性均匀化，并以低电流进行写入工作。