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    CMOS image sensor structure with crosstalk improvement
    7.
    发明授权
    CMOS image sensor structure with crosstalk improvement 有权
    具有串扰改善的CMOS图像传感器结构

    公开(公告)号：US09397130B1

    公开(公告)日：2016-07-19

    申请号：US14583406

    申请日：2014-12-26

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Chien-Chang Huang ,  Hsing-Chih Lin ,  Chien-Nan Tu ,  Yu-Lung Yeh

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14643 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

    摘要： A semiconductor device includes a substrate, a semiconductor layer, light-sensing devices, a transparent dielectric layer and a grid shielding layer. The semiconductor layer overlies the substrate, and has a first surface and a second surface opposite to the first surface. The semiconductor layer includes microstructures disposed on the second surface of the semiconductor layer. The light-sensing devices are disposed on the first surface of the semiconductor layer. The transparent dielectric layer is disposed on the second surface of the semiconductor layer, and covers the microstructures. The grid shielding layer extends from the first surface of the semiconductor layer toward the second surface of the semiconductor layer, and surrounds each of the light-sensing devices to separate the light-sensing devices from each other, in which a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer.

    摘要翻译： 半导体器件包括衬底，半导体层，光感测器件，透明电介质层和栅极屏蔽层。 半导体层覆盖在基板上，并且具有与第一表面相对的第一表面和第二表面。 半导体层包括设置在半导体层的第二表面上的微结构。 光感测装置设置在半导体层的第一表面上。 透明电介质层设置在半导体层的第二表面上并覆盖微结构。 栅极屏蔽层从半导体层的第一表面朝向半导体层的第二表面延伸，并且围绕每个光感测器件以彼此分离光感测器件，其中栅极屏蔽的深度 层的厚度大于半导体层厚度的三分之二。