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公开(公告)号：US12153350B2
公开(公告)日：2024-11-26
申请号：US18223993
申请日：2023-07-19
Inventor： Ru-Gun Liu , Huicheng Chang , Chia-Cheng Chen , Jyu-Horng Shieh , Liang-Yin Chen , Shu-Huei Suen , Wei-Liang Lin , Ya Hui Chang , Yi-Nien Su , Yung-Sung Yen , Chia-Fong Chang , Ya-Wen Yeh , Yu-Tien Shen
Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.
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公开(公告)号：US20240019787A1
公开(公告)日：2024-01-18
申请号：US18223993
申请日：2023-07-19
Inventor： Ru-Gun LIU , Huicheng Chang , Chia-Cheng Chen , Jyu-Horng Shieh , Liang-Yin Chen , Shu-Huei Suen , Wei-Liang Lin , Ya Hui Chang , Yi-Nien Su , Yung-Sung Yen , Chia-Fong Chang , Ya-Wen Yeh , Yu-Tien Shen
CPC classification number: G03F7/70558 , H01L21/0274 , G03F7/70033 , G03F7/70625 , G03F1/22 , G03F1/36 , G03F1/70 , G03F7/0035 , G03F7/40
Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.
