Transistor channel
    6.
    发明授权

    公开(公告)号:US09978650B2

    公开(公告)日:2018-05-22

    申请号:US14581970

    申请日:2015-01-06

    摘要: A transistor device includes a substrate having a first region and a second region, a first semiconductor layer of a first semiconductor material having a first portion over the first region and a second portion over the second region, the first portion being separated from the second portion, a second semiconductor layer of a second semiconductor material over the second portion of the first semiconductor layer, a first transistor of a first conductivity type, the first transistor disposed within the first region and having a first set of source/drain regions formed in the first semiconductor layer, and a second transistor of a second conductivity type, the second transistor disposed within the second region and having a second set of source/drain regions formed in the second semiconductor layer. The second conductivity type is different than the second conductivity type, and the second semiconductor material is different from the first semiconductor material.

    Deep Trench Isolation Structure and Method of Forming Same

    公开(公告)号:US20180047777A1

    公开(公告)日:2018-02-15

    申请号:US15790242

    申请日:2017-10-23

    IPC分类号: H01L27/146

    摘要: Deep trench isolation (DTI) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a substrate. A recess is formed in the substrate, the substrate comprising a first semiconductor material, the recess being interposed between adjacent photosensitive regions. The recess is enlarged by removing a damaged layer of the substrate along sidewalls of the recess, thereby forming an enlarged recess. An epitaxial region is formed on sidewalls and a bottom of the enlarged recess, at least a portion of the epitaxial region comprising a second semiconductor material, the second semiconductor material being different from the first semiconductor material. A dielectric region is formed on the epitaxial region, the epitaxial region extending along a sidewall of the dielectric region.

    Pixel isolation device and fabrication method

    公开(公告)号:US09887235B2

    公开(公告)日:2018-02-06

    申请号:US14967046

    申请日:2015-12-11

    IPC分类号: H01L21/00 H01L27/146

    CPC分类号: H01L27/14689

    摘要: Backside illuminated (BSI) image sensor devices are described as having pixel isolation structures formed on a sacrificial substrate. A photolayer is epitaxially grown over the pixel isolation structures. Radiation-detecting regions are formed in the photolayer adjacent to the pixel isolation structures. The pixel isolation structures include a dielectric material. The radiation-detecting regions include photodiodes. A backside surface of the BSI image sensor device is produced by planarized removal of the sacrificial substrate to physically expose the pixel isolation structures or at least optically expose the photolayer.

    Deep Trench Isolation Structure and Method of Forming Same

    公开(公告)号:US20170278893A1

    公开(公告)日:2017-09-28

    申请号:US15079781

    申请日:2016-03-24

    IPC分类号: H01L27/146

    摘要: Deep trench isolation (DTI) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a substrate. A recess is formed in the substrate, the substrate comprising a first semiconductor material, the recess being interposed between adjacent photosensitive regions. The recess is enlarged by removing a damaged layer of the substrate along sidewalls of the recess, thereby forming an enlarged recess. An epitaxial region is formed on sidewalls and a bottom of the enlarged recess, at least a portion of the epitaxial region comprising a second semiconductor material, the second semiconductor material being different from the first semiconductor material. A dielectric region is formed on the epitaxial region, the epitaxial region extending along a sidewall of the dielectric region.

    Method and apparatus of RFID tag contactless testing
    10.
    发明授权
    Method and apparatus of RFID tag contactless testing 有权
    RFID标签无接触测试方法和装置

    公开(公告)号:US09098757B2

    公开(公告)日:2015-08-04

    申请号:US13926596

    申请日:2013-06-25

    摘要: A semiconductor wafer includes a plurality of dies. Each of the plurality of dies includes a radio frequency identification (RFID) tag circuit and a coil. The RFID tag circuit includes a tag core, an RF front-end circuit, an ID decoder, a comparator and conductive line for a unique ID. The RF front-end circuit is configured to receive electromagnetic signals through the coil in each of the plurality of dies and to convert the received electromagnetic signals into commands. The ID decoder is configured to receive the commands and to generate an expect ID. The comparator is configured to compare the unique ID with the expect ID to generate a comparison result. The comparison result is arranged to decide if the tag core is configured to receive commands.

    摘要翻译: 半导体晶片包括多个管芯。 多个管芯中的每一个都包括射频识别(RFID)标签电路和线圈。 RFID标签电路包括标签芯,RF前端电路,ID解码器,用于唯一ID的比较器和导线。 RF前端电路被配置为通过多个管芯中的每一个中的线圈接收电磁信号,并将接收到的电磁信号转换为命令。 ID解码器被配置为接收命令并产生期望ID。 比较器被配置为将唯一ID与期望ID进行比较以产生比较结果。 布置比较结果来确定标签核心是否配置为接收命令。