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1.发明申请公开(公告)号：US20190115901A1
公开(公告)日：2019-04-18
申请号：US16132820
申请日：2018-09-17
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Yuki TAKAHASHI , Hiroomi KANEKO , Hiroshi KAWAKAMI , Shinji TANIGUCHI
Abstract: A ladder-type filter includes: a first piezoelectric thin film resonator including a first lower electrode, a first piezoelectric film, a first upper electrode, and an insertion film inserted between the first lower and upper electrodes, the insertion film being located in an outer peripheral region of a first resonance region; a second piezoelectric thin film resonator including a second lower electrode, a second piezoelectric film, and a second upper electrode, the second piezoelectric thin film resonator having no insertion film between the second lower and upper electrodes in a second resonance region; a series resonator, at least one of the series resonator being a first resonator that is one of the first and second piezoelectric thin film resonators, and a parallel resonator, at least one of the parallel resonator being a second resonator that is another of the first and second piezoelectric thin film resonators.
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2.发明申请
公开(公告)号：US20190007021A1
公开(公告)日：2019-01-03
申请号：US16008845
申请日：2018-06-14
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Shinji TANIGUCHI , Hiroomi KANEKO , Hiroshi KAWAKAMI , Tokihiro NISHIHARA
CPC classification number: H03H9/02102 , H03H3/02 , H03H9/02015 , H03H9/02031 , H03H9/02118 , H03H9/131 , H03H9/173 , H03H9/175 , H03H9/178 , H03H9/562 , H03H9/564 , H03H9/568 , H03H9/706 , H03H2003/021 , H03H2003/025
Abstract: A piezoelectric thin film resonator includes: a substrate; lower and upper electrodes located on the substrate; a piezoelectric film that has a lower piezoelectric film mainly composed of aluminum nitride and an upper piezoelectric film mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; and an insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide.
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公开(公告)号：US20170257076A1
公开(公告)日：2017-09-07
申请号：US15416283
申请日：2017-01-26
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Hiroomi KANEKO , Hiroshi KAWAKAMI , Shinji TANIGUCHI , Tokihiro NISHIHARA , Tsuyoshi YOKOYAMA
IPC: H03H9/70 , H01L41/053 , H03H9/17 , H01L41/047 , H03H9/54
CPC classification number: H03H9/02118 , H01L41/0475 , H01L41/0533 , H01L41/187 , H03H9/172 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/706
Abstract: A piezoelectric thin film resonator includes: lower and upper electrodes located on a substrate and facing each other; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, an outer outline of the upper piezoelectric film coinciding with or being located further out than an outer outline of a resonance region in a region surrounding the resonance region, the outer outline of the upper piezoelectric film being located further in than an outer outline of the lower piezoelectric film in the region; an insertion film interposed between the lower and upper piezoelectric films, located in an outer peripheral region within the resonance region, not located in a central region of the resonance region, and located on an upper surface of the lower piezoelectric film in the region; and a protective film located on the upper electrode in the resonance region, and located so as to cover an end face of the upper piezoelectric film and an upper surface of the insertion film in the region.
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公开(公告)号：US20160353221A1
公开(公告)日：2016-12-01
申请号：US15142925
申请日：2016-04-29
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Ryuichi OKAMURA , Hiroshi KAWAKAMI , Hiroomi KANEKO , Shinji TANIGUCHI , Tsuyoshi YOKOYAMA
CPC classification number: H04R31/006 , H04R17/00 , H04R17/005 , H04R2201/003
Abstract: A piezoelectric thin film resonator includes: a lower electrode and an upper electrode facing each other across a piezoelectric film; an insertion film inserted into the piezoelectric film, located in at least a part of an outer peripheral region in a resonance region and outside the outer peripheral region, and not located in a center region of the resonance region; a protective film on the upper electrode and the piezoelectric film; and a wiring line connecting to the lower electrode and covering an outer periphery of the protective film in an extraction region of the lower electrode, wherein in the extraction region, an outer periphery of the insertion film is further out than an outer periphery of the upper electrode and further in than an outer periphery of the piezoelectric film, and the outer periphery of the protective film is further out than the outer periphery of the insertion film.
Abstract translation: 一种压电薄膜谐振器包括：一个下电极和一个上电极，横跨压电膜彼此面对; 插入到所述压电膜中的插入膜，位于所述共振区域的外周区域的外周区域的外周区域的至少一部分中，并且不位于所述共振区域的中心区域; 上电极和压电膜上的保护膜; 以及连接到下电极并在下电极的提取区域中覆盖保护膜的外周的布线，其中在提取区域中，插入膜的外周比上层的外周更远 电极，并且比压电膜的外周更进一步，保护膜的外周比插入膜的外周更远。
