公开(公告)号：US3593172A

公开(公告)日：1971-07-13

申请号：US3593172D

申请日：1969-08-21

申请人： TELEFUNKEN PATENT

发明人： BOSCH BERTHOLD ,  HEINLE WOLFGANG ,  ENGELMANN REINHART

IPC分类号： H01L47/00 ,  H03F3/60 ,  H03B7/06

CPC分类号： H03F3/608 ,  H01L47/00

摘要： An amplifier circuit including a Gunn effect semiconductor which exhibits increased limit frequencies and higher negative conductance. The Gunn effect semiconductor is constructed to possess a region in the vicinity of its cathode in which the field strength as effected by a steady state biasing voltage lies between the critical value at which the Gunn oscillation is initiated and a lower value at which the Gunn oscillation is extinguished, while the remainder of the semiconductor body possesses a field strength less than such lower value. The first region is periodically pulse triggered to initiate the Gunn oscillation, the period between pulses being approximately equal to the transit time of a high field zone through the semiconductor body. The triggering pulses may be produced by a second Gunn element or they may be produced in the first Gunn element itself.