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    Reactor for generating moisture
    1.
    发明授权
    Reactor for generating moisture 有权
    反应器产生水分

    公开(公告)号：US06733732B2

    公开(公告)日：2004-05-11

    申请号：US09783287

    申请日：2001-02-15

    申请人： Tadahiro Ohmi ,  Koji Kawada ,  Yoshikazu Tanabe ,  Takahisa Nitta ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Keiji Hirao ,  Hiroshi Morokoshi ,  Yukio Minami

    发明人： Tadahiro Ohmi ,  Koji Kawada ,  Yoshikazu Tanabe ,  Takahisa Nitta ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Keiji Hirao ,  Hiroshi Morokoshi ,  Yukio Minami

    IPC分类号： B01J802

    CPC分类号： C01B5/00

    摘要： A reactor comprising a body made of a heat-resistant material and having an inlet and an outlet for water/moisture gas, having a gas-diffusing member provided in an internal space of the body, and having a platinum coating on an internal wall surface of the body. Hydrogen and oxygen fed from the inlet are diffused by the gas-diffusing member and then come into contact with the platinum coating to enhance reactivity, thereby producing water. A temperature of the reactor is held to be below an ignition temperature of hydrogen or a hydrogen-containing gas. The platinum-coated catalyst layer on the internal wall of the reactor body is formed by treating the surface of the internal wall of the body, cleaning the treated surface, forming a barrier coating of a nonmetallic material of an oxide or nitride on the wall surface, and forming the platinum coating on the barrier coating.

    摘要翻译： 一种反应器，包括由耐热材料制成并具有用于水/湿气的入口和出口的本体，其具有设置在所述主体的内部空间中的气体扩散构件，并且在内壁表面上具有铂涂层 的身体。 从入口供给的氢气和氧气被气体扩散构件扩散，然后与铂涂层接触以提高反应性，从而产生水。 反应器的温度保持在低于氢气或含氢气体的点火温度。 反应器主体内壁上的铂涂层催化剂层是通过处理体内表面，清洁处理过的表面，在壁表面上形成氧化物或氮化物的非金属材料的阻挡涂层形成的 ，并在阻挡涂层上形成铂涂层。

    Reactor for the generation of water
    2.
    发明授权
    Reactor for the generation of water 失效
    反应堆生成水

    公开(公告)号：US06180067B2

    公开(公告)日：2001-01-30

    申请号：US09160188

    申请日：1998-09-25

    申请人： Tadahiro Ohmi ,  Koji Kawada ,  Yoshikazu Tanabe ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Yukio Minami

    发明人： Tadahiro Ohmi ,  Koji Kawada ,  Yoshikazu Tanabe ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Yukio Minami

    IPC分类号： B01J1500

    CPC分类号： B01J12/007 ,  C01B5/00

    摘要： An improved reactor for generating water from hydrogen and oxygen which allows production of moisture at a high conversion rate exceeding 99 percent with the temperature kept under some 400° C. inside the reactor shell (1) and with the water vapor production being more than 1,000 sccm. One form of the reactor (FIG. 1) according to the invention is constructed with a closed cylinder divided into two compartments by an interior partition, a first reactor structural component (2) and a second reactor structural component (3), united to define a sealed interior space (1a). The sealed interior space (1a) of the reactor shell (1) is partitioned by a diffusion filter (10) into a first chamber (1b) provided with an inlet reflector unit (9) and a second chamber (1c) provided with an outlet reflector-diffuser unit (11). On the inside surface of the second reactor structural component (1c) is formed a platinum coated catalyst layer (13). The inlet reflector unit (9) comprises a cylindrical casing (9a) mounted over a starting material gas feed port (2c) on the inside surface of the first reactor structural component (2), side openings (9c) formed in the casing (9a) and a reflector (9b) closing the open end of the casing (9a). The outlet reflector-diffuser unit (11) has a cylindrical casing (11a) fixed over a water vapor gas outlet port (3c) on the inside surface of the second reactor structural component (3), side openings (11e) formed in the casing, a reflector (11b) closing the open end of the casing (11a), an outlet diffusion filter (11c) provided inside the casing (11a) and a platinum coated catalyst layer (11d) formed on the outlet diffusion filter (11c).

    摘要翻译： 一种用于从氢气和氧气产生水的改进的反应器，其允许在反应器壳（1）内保持在约400℃的温度下以高转化率生产超过99％的水分，并且水蒸汽产生量大于1,000 sccm。 根据本发明的反应器（图1）的一种形式被构造成具有通过内部分隔件分成两个隔间的封闭圆筒，第一反应器结构部件（2）和第二反应器结构部件（3），所述第一反应器结构部件（2）和第二反应器结构部件 密封的内部空间（1a）。 反应器壳体（1）的密封内部空间（1a）被扩散过滤器（10）分隔成具有入口反射器单元（9）的第一室（1b）和设置有出口 反射器 - 扩散器单元（11）。 在第二反应器结构部件（1c）的内表面上形成有镀铂催化剂层（13）。 入口反射器单元（9）包括安装在第一反应器结构部件（2）的内表面上的原料气体供给口（2c）上的圆柱形壳体（9a），形成在壳体（9a）中的侧开口（9c） ）和闭合壳体（9a）的开口端的反射器（9b）。 出口反射器 - 扩散器单元（11）具有固定在第二反应器结构部件（3）的内表面上的水蒸汽气体出口（3c）上的圆筒形壳体（11a），形成在壳体中的侧开口（11e） ，封闭壳体（11a）的开口端的反射器（11b），设置在壳体（11a）内部的出口扩散过滤器（11c）和形成在出口扩散过滤器（11c）上的镀铂催化剂层（11d） 意大利

    Method for generating water for semiconductor production
    3.
    发明授权
    Method for generating water for semiconductor production 失效
    生产半导体水的方法

    公开(公告)号：US6093662A

    公开(公告)日：2000-07-25

    申请号：US242137

    申请日：1999-04-14

    申请人： Tadahiro Ohmi ,  Yukio Minami ,  Koji Kawada ,  Yoshikazu Tanabe ,  Nobukazu Ikeda ,  Akihiro Morimoto

    发明人： Tadahiro Ohmi ,  Yukio Minami ,  Koji Kawada ,  Yoshikazu Tanabe ,  Nobukazu Ikeda ,  Akihiro Morimoto

    IPC分类号： C01B5/00 ,  H01L21/31 ,  H01L21/469

    CPC分类号： C01B5/00

    摘要： Process for generating moisture for use in semiconductor manufacturing, the process comprising feeding hydrogen and oxygen into a reactor provided with a platinum-coated catalyst layer on an interior wall, thus enhancing the reactivity between hydrogen and oxygen by catalytic action and instantaneously reacting the reactivity-enhanced hydrogen and oxygen at a temperature below the ignition point to produce moisture without undergoing combustion at a high temperature, wherein the amount of unreacted hydrogen occurring in the generated moisture in starting up or terminating the moisture generating reaction is minimized and wherein undesired reactions such as undesired silicon oxide film coating are avoided. When the generation of moisture is started up by feeding hydrogen and oxygen into the reactor provided with a platinum-coated catalyst layer on the inside wall thereof, oxygen first starts to be fed and, some time after that, the supply of hydrogen is begun. In terminating the moisture generating operation by cutting off the supply of hydrogen and oxygen into the reactor, the feeding of hydrogen is first stopped and, some time after that, the supply of oxygen is shut off.

    摘要翻译： PCT No.PCT / JP98 / 02660 Sec。 371 1999年4月14日第 102（e）1999年4月14日PCT PCT。1998年6月12日PCT公布。 第WO98 / 57884号公报 日期1998年12月23日用于生产用于半导体制造的水分的方法，该方法包括将氢和氧进料到在内壁上设置有铂包覆催化剂层的反应器中，从而通过催化作用增强氢和氧之间的反应性， 在低于点火点的温度下使反应性增强的氢和氧瞬时反应以产生水分而不在高温下经历燃烧，其中在产生水分的反应中启动或终止产生的水分中产生的未反应的氢的量最小化， 其中避免了不期望的反应，例如不需要的氧化硅膜涂层。 当通过在其内壁上提供有铂包覆的催化剂层的反应器中加入氢气和氧气来启动水分的产生时，首先开始供给氧，一段时间后开始供应氢气。 在通过切断氢气和氧气进入反应器来终止湿气生成操作时，首先停止供给氢气，一段时间后，关闭氧气供应。

    Low flow rate moisture supply process
    4.
    发明授权
    Low flow rate moisture supply process 失效
    低流量水分供应过程

    公开(公告)号：US06334962B1

    公开(公告)日：2002-01-01

    申请号：US09207763

    申请日：1998-12-09

    申请人： Yukio Minami ,  Koji Kawada ,  Yoshikazu Tanabe ,  Nobukazu Ikeda ,  Akihiro Morimoto

    发明人： Yukio Minami ,  Koji Kawada ,  Yoshikazu Tanabe ,  Nobukazu Ikeda ,  Akihiro Morimoto

    IPC分类号： C01B500

    CPC分类号： F22B1/003 ,  C01B5/00

    摘要： A process of supplying moisture at low flow rates which permits high precision control of the flow of moisture to a semiconductor manufacturing line from an apparatus for the generation of moisture, characterized in that the flow of hydrogen to a moisture-generating reactor is controlled by means of a flow controller in such a way that an amount of hydrogen as fed is gradually increased from the start and reaches a specific set level such that when a specific time has passed, a predetermined rate of moisture begins to be produced and supplied to the semiconductor manufacturing line. The moisture is generated in the apparatus for generation of moisture in which hydrogen and oxygen are (a) fed into a reactor provided with a coat of platinum on the wall in the interior space, (b) enhanced in reactivity by the platinum catalytic action, and (c) caused to instantaneously react with each other at a temperature lower than the ignition point to produce moisture without undergoing combustion at a high temperature.

    摘要翻译： 以低流量供应水分的方法，其允许从用于产生水分的装置对半导体生产线的水分流的高精度控制，其特征在于，通过装置控制氢气流向产生水分的反应器 的流量控制器，使得所供给的氢气的量从开始逐渐增加并达到特定设定水平，使得当经过特定时间时，开始产生预定的水分率并将其供应到半导体 生产线。 在用于产生水分的装置中产生水分，其中（a）在内部空间的壁上被供给到设置有铂层的反应器的反应器中，（b）通过铂催化作用增强反应性， 和（c）在低于点火点的温度下彼此瞬间反应以产生湿气，而不会在高温下经历燃烧。

    Apparatus for the treatment of exhaust gases by combining hydrogen and oxygen
    5.
    发明授权
    Apparatus for the treatment of exhaust gases by combining hydrogen and oxygen 失效
    用于通过组合氢和氧来处理废气的装置

    公开(公告)号：US06274098B1

    公开(公告)日：2001-08-14

    申请号：US09225575

    申请日：1999-01-05

    申请人： Yoshikazu Tanabe ,  Yukio Minami ,  Koji Kawada ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Keiji Hirao

    发明人： Yoshikazu Tanabe ,  Yukio Minami ,  Koji Kawada ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Keiji Hirao

    IPC分类号： B01J800

    CPC分类号： B01D53/8671

    摘要： An apparatus for the treatment of exhaust gases containing hydrogen which permits always stable treatment with certainty of the exhaust gases from a semiconductor manufacturing line or the like irrespective of violent fluctuations in the flow rate of the exhaust gases, without having adverse effects on the operation of the semiconductor manufacturing line. The apparatus comprises: an ejector-type vacuum generator having a suction port connected to the discharge source of exhaust gases containing hydrogen and having a drive fluid supply port connected to an oxygen supply source, a hydrogen-oxygen reactor provided with a catalyst and connected to a drive fluid discharge port of the vacuum generator, and a drain reservoir connected to an outlet of the reactor for storing water discharged therefrom.

    摘要翻译： 一种用于处理含有氢的废气的装置，其允许始终稳定地处理来自半导体生产线等的废气的确定性，而不管排气的流量的剧烈波动，而不会对操作造成不利影响 半导体生产线。 该装置包括：喷射式真空发生器，其具有连接到含有氢气的废气排放源的吸入口，并且具有连接到氧供应源的驱动流体供给口，设置有催化剂的氢氧反应器， 真空发生器的驱动流体排出口，以及连接到反应器的出口的排水储存器，用于储存从其排出的水。

    Fabrication process of a semiconductor integrated circuit device
    9.
    发明授权
    Fabrication process of a semiconductor integrated circuit device 有权
    半导体集成电路器件的制造工艺

    公开(公告)号：US06987069B2

    公开(公告)日：2006-01-17

    申请号：US10821842

    申请日：2004-04-12

    申请人： Yoshikazu Tanabe ,  Isamu Asano ,  Makoto Yoshida ,  Naoki Yamamoto ,  Masayoshi Saito ,  Nobuyoshi Natsuaki

    发明人： Yoshikazu Tanabe ,  Isamu Asano ,  Makoto Yoshida ,  Naoki Yamamoto ,  Masayoshi Saito ,  Nobuyoshi Natsuaki

    IPC分类号： H01L21/31

    CPC分类号： H01L21/28247 ,  H01L21/28061 ,  H01L21/28176 ,  H01L21/32105 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823828 ,  H01L21/823857 ,  H01L27/1052 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/4941

    摘要： With a view to preventing the oxidation of a metal film at the time of light oxidation treatment after gate patterning and at the same time to making it possible to control the reproducibility of oxide film formation and homogeneity of oxide film thickness at gate side-wall end portions, in a gate processing step using a poly-metal, a gate electrode is formed by patterning a gate electrode material which has been deposited over a semiconductor wafer 1A having a gate oxide film formed thereon and has a poly-metal structure and then, the principal surface of the semiconductor wafer 1A heated to a predetermined temperature or vicinity thereof is supplied with a hydrogen gas which contains water at a low concentration, the water having been formed from hydrogen and oxygen by a catalytic action, to selectively oxidize the principal surface of the semiconductor wafer 1A, whereby the profile of the side-wall end portions of the gate electrode is improved.

    摘要翻译： 为了防止栅极图案化后的光氧化处理时的金属膜的氧化，同时能够控制氧化膜形成的再现性和栅侧壁端的氧化膜厚度的均匀性 在使用多金属的栅极处理步骤中，通过对已在其上形成有栅极氧化膜的半导体晶片1A上淀积的具有多金属结构的栅电极材料进行构图来形成栅电极， 向被加热到预定温度或附近的半导体晶片1A的主表面供给含有低浓度的水的氢气，由氢和氧通过催化作用形成的水，以选择性地氧化 半导体晶片1A的主表面，从而提高了栅电极的侧壁端部的轮廓。