公开(公告)号：US06635323B2

公开(公告)日：2003-10-21

申请号：US09777648

申请日：2001-02-06

申请人： Tadashi Kihara ,  Takeharu Yamamura ,  Kenichi Tayama

发明人： Tadashi Kihara ,  Takeharu Yamamura ,  Kenichi Tayama

IPC分类号： B29D2200

CPC分类号： C30B11/00 ,  C30B15/00 ,  C30B29/42 ,  Y10T428/12528 ,  Y10T428/12681 ,  Y10T428/13 ,  Y10T428/1338 ,  Y10T428/31678

摘要： The present invention provides a raw material 1 used for production of GaAs crystals by utilizing solidification of melt, wherein As 12 is accommodated in the inside of Ga 10, 11. Because As 12 is covered with Ga 10, 11, As 12 is not brought into contact with the air and can thus be conveyed without oxidizing As 12. The raw material 1 can be heated and melted as such to produce GaAs crystals by the Czochralski method.

摘要翻译： 本发明提供一种用于通过熔融固化生产GaAs晶体的原料1，其中As 12被容纳在Ga 10，11的内部。由于As 12被Ga 10,11覆盖，所以As 12不被带入 与空气接触，因此可以在不氧化As12的情况下被输送。原料1可以被加热和熔化，从而通过切克劳斯（Czochralski）方法产生GaAs晶体。