Method of sensing data in semiconductor memory device
    3.
    发明授权
    Method of sensing data in semiconductor memory device 有权
    在半导体存储器件中检测数据的方法

    公开(公告)号:US6091653A

    公开(公告)日:2000-07-18

    申请号:US375448

    申请日:1999-08-17

    IPC分类号: G11C7/22 G11C7/00

    CPC分类号: G11C7/22 G11C2207/2281

    摘要: The present invention provides a method of sensing data in a semiconductor device. First, an equalizing instructing signal is provided to stop precharging and equalizing the bit line pair while in a reading state. Then a wordline is selected to transmit the data in a memory cell to one of the pair of bit lines for obtaining a potential difference between the bit line pair. A sensing enable signal is subsequently provided to activate the shared sense amplifier for sensing and amplifying the data. And a potential level of the selecting control signal is boosted to a boosted potential level to restore and read the data by delaying a predetermined period of time.

    摘要翻译: 本发明提供了一种在半导体器件中检测数据的方法。 首先,提供均衡指示信号,以在读取状态下停止对位线对的预充电和均衡。 然后选择字线将存储器单元中的数据发送到该对位线之一,以获得位线对之间的电位差。 随后提供感测使能信号以激活用于感测和放大数据的共享读出放大器。 并且选择控制信号的电位电平被提升到提升电位电平,以通过延迟预定时间段来恢复和读取数据。