摘要:
The present invention provides a switching device and a method for preventing malfunction of the same. The switching device includes: a controller for outputting a plurality of digital control signals; a protecting unit connected to the controller for protecting all signals when the plurality of digital control signals outputted from the controller are simultaneously received at a state of ON; a gate driver connected to the protecting unit for generating a switch control signal by converting the control signal passed through the protecting unit; and a plurality of switches connected to the gate driver for individually performing ON•OFF operations according to each of the switching control signals.
摘要:
The present invention provides a switching device and a method for preventing malfunction of the same. The switching device includes: a controller for outputting a plurality of digital control signals; a protecting unit connected to the controller for protecting all signals when the plurality of digital control signals outputted from the controller are simultaneously received at a state of ON; a gate driver connected to the protecting unit for generating a switch control signal by converting the control signal passed through the protecting unit; and a plurality of switches connected to the gate driver for individually performing ON•OFF operations according to each of the switching control signals.
摘要:
An electric generating system using a solar cell improves the quality of output power by including a converter for converting an output voltage generated from the solar cell into a DC voltage in a pulse shape. An inverter converts the DC voltage in the pulse shape into an AC voltage and applies the AC voltage to a power system and a control device for determining whether an erroneous operation of the electric generating system using the solar cell is generated or not based on an output voltage of the solar cell, an output current of the solar cell and a voltage of the power system. At least one inverter switching device among a plurality of inverter switching devices performs a switching at a frequency higher than a frequency during a normal operation at an interval where the erroneous operation is generated.
摘要:
An electric generating system using a solar cell improves the quality of output power by including a converter for converting an output voltage generated from the solar cell into DC voltage in a pulse shape. An inverter converts the DC voltage in the pulse shape into an AC voltage and applies the AC voltage to a power system and a control device for determining whether an erroneous operation of the electric generating system using the solar cell is generated or not based on an output voltage of the solar cell, an output current of the solar cell and a voltage of the power system. At least one inverter switching device among a plurality of inverter switching devices performs a switching at a frequency higher than a frequency during a normal operation at an interval where the erroneous operation is generated.
摘要:
A phase change memory device having a multi-level and a method of driving the same are presented. The disclosed phase change memory device includes variable resistors and shifting units. The variable resistors are interchanged into set and reset states in response to an applied current. The shifting units, which are connected to the variable resistors, shift resistance distribution in the set and reset state of the variable resistors by a predetermined level.
摘要:
A fusion memory device having phase change memory devices that have different resistance distributions and a corresponding data processing system is presented. The fusion memory device includes a first and a second phase change memory group arranged on the same chip. Because the second phase change memory group exhibits a resistance distribution different from that of the first phase change memory group, then the fusion memory device can be configured to simultaneously function as both a DRAM device and as a flash memory device. Because the first and second phase change memory groups can be composed of similar PRAM components, the corresponding manufacturing and driving circuitry is markedly simplified as compared to other fusion memory devices that have dissimilar DRAM and flash memory components.
摘要:
A phase change memory device having a heater that exhibits a temperature dependent resistivity which provides a way of reducing a reset current is presented. The phase change memory device includes a phase change pattern and a heating electrode contacted with the phase change pattern. The heating electrode includes a smart heating electrode such that the smart heating layer is formed of a conduction material that exhibits an increase in resistance as a function of an increase in temperature, i.e., a positive temperature dependent resistivity.
摘要:
A high integration phase change memory device includes a semiconductor substrate including an access device, a heating electrode formed on the access device, a phase change nano band formed on the heating electrode, and an interlayer insulating layer for supporting the phase change nano band formed in both sides of the phase change nano band.
摘要:
A circuit for generating a reference voltage includes at least one reference cell, a reference cell write driver, a reference cell sense amplifier, and a voltage compensation unit. The reference cell is a variable resistance memory cell. The reference cell write driver writes data to the reference cell. The reference cell sense amplifier reads out the data stored in the reference cell on the basis of a predetermined reference voltage. A voltage compensation unit outputs a compensation reference voltage by controlling the reference voltage in accordance with the output value of the sense amplifier.
摘要:
A high integration phase change memory device includes a semiconductor substrate including an access device, a heating electrode formed on the access device, a phase change nano band formed on the heating electrode, and an interlayer insulating layer for supporting the phase change nano band formed in both sides of the phase change nano band.