公开(公告)号：US08946748B2

公开(公告)日：2015-02-03

申请号：US13478849

申请日：2012-05-23

申请人： Tae Hun Kim ,  Seung Wan Chae ,  Yong Il Kim ,  Seung Jae Lee ,  Tae Sung Jang ,  Jong Rak Sohn ,  Bo Kyoung Kim

发明人： Tae Hun Kim ,  Seung Wan Chae ,  Yong Il Kim ,  Seung Jae Lee ,  Tae Sung Jang ,  Jong Rak Sohn ,  Bo Kyoung Kim

IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L33/46 ,  H01L33/20

CPC分类号： H01L33/46 ,  H01L33/20 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a semiconductor light emitting device including: a light transmissive substrate; a light emitting part; first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively; and a rear reflective part including a reflective metallic layer, and a light transmissive dielectric layer interposed between the light transmissive substrate and the reflective metallic layer.

摘要翻译： 提供了一种半导体发光器件，包括：透光衬底; 发光部分; 分别与第一和第二导电类型半导体层电连接的第一和第二电极; 以及包括反射金属层的后反射部分和介于透光基板和反射金属层之间的透光电介质层。

公开(公告)号：US20130240937A1

公开(公告)日：2013-09-19

申请号：US13820459

申请日：2011-09-01

申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Jin Bock Lee ,  Jin Hwan Kim ,  Seung Jae Lee ,  Bo Kyoung Kim ,  Jong Ho Lee

发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Jin Bock Lee ,  Jin Hwan Kim ,  Seung Jae Lee ,  Bo Kyoung Kim ,  Jong Ho Lee

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a semiconductor light emitting diode (LED) chip including: a semiconductor light emitting diode unit including a light-transmissive substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on an upper surface of the light-transmissive substrate; a rear reflective laminate including an auxiliary optical layer formed on a lower surface of the light-transmissive substrate and made of a material having a predetermined refractive index and a metal reflective film formed on a lower surface of the auxiliary optical layer; and a bonding laminate provided on a lower surface of the rear reflective laminate and including a bonding metal layer made of a eutectic metal material and an anti-diffusion film formed to prevent diffusion of elements between the bonding metal layer and the metal reflective film.

摘要翻译： 提供了一种半导体发光二极管（LED）芯片，其包括：半导体发光二极管单元，包括透光基板，以及顺序形成的第一导电型半导体层，有源层和第二导电类型半导体层 在所述透光性基板的上表面上; 后反光层叠体，其包括形成在所述透光性基板的下表面上并由具有预定折射率的材料制成的辅助光学层和形成在所述辅助光学层的下表面上的金属反射膜; 以及设置在后反射层叠体的下表面上并包括由共晶金属材料制成的接合金属层和形成为防止元件在接合金属层和金属反射膜之间扩散的防扩散膜的接合层压体。

公开(公告)号：US20130002139A1

公开(公告)日：2013-01-03

申请号：US13536338

申请日：2012-06-28

申请人： Tae Hun KIM ,  Seung Wan Chae ,  Sung Tae Kim ,  Su Yeol Lee

发明人： Tae Hun KIM ,  Seung Wan Chae ,  Sung Tae Kim ,  Su Yeol Lee

IPC分类号： H05B37/02

CPC分类号： H01L25/167 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/00014

摘要： There is provided a semiconductor light emitting device package including: a semiconductor substrate having a first principal surface and a second principal surface opposed thereto; a light source disposed on a first principal surface side of the semiconductor substrate; a plurality of electrode pads disposed on a second principal side of the semiconductor substrate; a conductive via extended from the plurality of electrode pads and penetrating the semiconductor substrate; and a driving circuit unit including a plurality of diodes obtained through a pn junction formed by a p-type region and an n-type region, and electrically connected to the conductive via and the light source.

摘要翻译： 提供了一种半导体发光器件封装，包括：具有与其相对的第一主表面和第二主表面的半导体衬底; 设置在所述半导体基板的第一主面侧的光源; 设置在所述半导体基板的第二主面上的多个电极焊盘; 从所述多个电极焊盘延伸并穿透所述半导体衬底的导电通孔; 以及驱动电路单元，其包括通过由p型区域和n型区域形成的pn结获得的多个二极管，并且电连接到导电通孔和光源。

公开(公告)号：US08829548B2

公开(公告)日：2014-09-09

申请号：US13554026

申请日：2012-07-20

申请人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

发明人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

IPC分类号： H01L33/00

CPC分类号： H01L25/167 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

摘要翻译： 发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

公开(公告)号：US20130020598A1

公开(公告)日：2013-01-24

申请号：US13554026

申请日：2012-07-20

申请人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

发明人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

IPC分类号： H01L33/50 ,  H01L33/62

CPC分类号： H01L25/167 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

摘要翻译： 发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

公开(公告)号：US20120286309A1

公开(公告)日：2012-11-15

申请号：US13279782

申请日：2011-10-24

申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L33/20

摘要： A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

摘要翻译： 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

公开(公告)号：US08487334B2

公开(公告)日：2013-07-16

申请号：US13279782

申请日：2011-10-24

申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/20

摘要： A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

摘要翻译： 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

公开(公告)号：US08867438B2

公开(公告)日：2014-10-21

申请号：US13002239

申请日：2009-06-30

申请人： Oh Seok Kim ,  Byung Duck Cho ,  Young Ky Kim ,  Yong Duk Cho ,  Jae Hawk Lee ,  Young Yong Lee ,  Jong Han Kim ,  Seung Wan Chae

发明人： Oh Seok Kim ,  Byung Duck Cho ,  Young Ky Kim ,  Yong Duk Cho ,  Jae Hawk Lee ,  Young Yong Lee ,  Jong Han Kim ,  Seung Wan Chae

IPC分类号： H04W4/00 ,  H04L12/801 ,  H04W52/28 ,  H04L12/835 ,  H04W28/14

CPC分类号： H04L47/10 ,  H04L47/14 ,  H04L47/30 ,  H04W28/14 ,  H04W52/286

摘要： A data transmission method for a high-speed packet access system includes: sending, by a user equipment, packet data containing scheduling information having size information of a packet buffer through an uplink channel to a base station, and sending quality indicator information and acknowledgement information through another uplink channel to the base station; determining, by the base station, the value of a turbo mode flag by comparing amounts of data stored in the packet buffer of the user equipment and a packet buffer of the base station respectively with preset thresholds; and deactivating, by the user equipment when the turbo mode flag of an order message contained in received control data, packet data reception and control data transmission, and redirecting transmit power of a specified transmitter to a packet data transmitter to increase transmit power of the packet data transmitter for faster packet data upload.

摘要翻译： 一种用于高速分组接入系统的数据传输方法包括：通过用户设备将包含具有通过上行链路信道的分组缓冲器的大小信息的调度信息的分组数据发送给基站，并且发送质量指示符信息和确认信息 通过到基站的另一上行链路信道; 通过将存储在用户设备的分组缓冲器中的数据与基站的分组缓冲器分别与预设阈值进行比较，来确定turbo模式标志的值; 并且当所接收的控制数据中包含的订购消息的turbo模式标志，分组数据接收和控制数据传输以及将指定发射机的发射功率重定向到分组数据发射机以增加分组的发射功率时，由用户设备停用 数据发送器，用于更快的数据包数据上传。

公开(公告)号：US07645689B2

公开(公告)日：2010-01-12

申请号：US11812868

申请日：2007-06-22

申请人： Jun Ho Seo ,  Suk Kil Yoon ,  Seung Wan Chae

发明人： Jun Ho Seo ,  Suk Kil Yoon ,  Seung Wan Chae

IPC分类号： H01L21/20

CPC分类号： H01L33/04 ,  H01L27/0248 ,  H01L27/15 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L2933/0016

摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.

摘要翻译： 公开了一种氮化镓基发光器件及其制造方法。 发光器件包括依次层叠在衬底上的n型GaN基覆盖层，有源层，p型GaN基覆盖层和p侧电极。 该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。 每个MIM型隧道结包括形成在GaN基覆层上的下金属层，以便接触n型GaN基覆层，形成在下金属层上的绝缘膜和形成的上金属层 在绝缘膜上。 该器件可防止反向ESD电压，从而可以提高对反向ESD电压的容限，从而提高器件的可靠性。

公开(公告)号：US20140198528A1

公开(公告)日：2014-07-17

申请号：US14239100

申请日：2011-08-17

申请人： Yong Tae KIim ,  Tomio Inoue ,  Je Won Kim ,  Tsuyoshi Tsutsui ,  Jong Ho Lee ,  Seung Wan Chae

发明人： Yong Tae KIim ,  Tomio Inoue ,  Je Won Kim ,  Tsuyoshi Tsutsui ,  Jong Ho Lee ,  Seung Wan Chae

IPC分类号： H01L33/50 ,  F21V8/00

CPC分类号： G02B6/0073 ,  H01L33/486 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

摘要： There is provided a method of manufacturing a wavelength converted LED chip, including attaching a plurality of LED chips to a chip alignment region of an upper surface of a temporary support plate, forming a conductive bump on the electrode of the respective LED chips, forming a phosphor-containing resin encapsulation part in the chip alignment region to cover the conductive bump, polishing the phosphor containing resin encapsulation part, forming the wavelength converted LED chips by cutting the provided phosphor containing resin encapsulation part between the LED chips, the wavelength converted LED chip including a wavelength conversion layer obtained from the phosphor containing resin encapsulation part and formed on lateral surfaces and an upper surface of the wavelength converted LED chip, and removing the temporary support plate from the wavelength converted LED chip.

摘要翻译： 提供一种制造波长转换LED芯片的方法，包括将多个LED芯片附接到临时支撑板的上表面的芯片对准区域，在各个LED芯片的电极上形成导电凸块，形成 含磷光体的树脂封装部分在芯片取向区域中覆盖导电凸块，抛光含荧光体的树脂封装部分，通过在LED芯片之间切割提供的含磷树脂封装部分，形成波长转换的LED芯片，波长转换的LED芯片 包括由含荧光体的树脂封装部分形成的波长转换层，并形成在波长转换的LED芯片的侧面和上表面上，并从波长转换的LED芯片上去除临时支撑板。