公开(公告)号：US20070195614A1

公开(公告)日：2007-08-23

申请号：US11732219

申请日：2007-04-03

申请人： Tae Kim ,  Michael Cordoba ,  Howard Kirsch

发明人： Tae Kim ,  Michael Cordoba ,  Howard Kirsch

IPC分类号： G11C7/00

CPC分类号： G11C5/147 ,  G11C16/30 ,  H03K3/356113

摘要： A voltage level translator boosts the gate voltage of a transistor, and increases the gate to source voltage, to allow operation over a wider range of supply voltages. The P/N ratio of transistors in the voltage level translator is therefore increased, and control of the flipping of nodes is dependent on gate voltages as opposed to P/N ratios.

公开(公告)号：US20060044888A1

公开(公告)日：2006-03-02

申请号：US10931587

申请日：2004-09-01

申请人： Tae Kim ,  Michael Cordoba ,  Howard Kirsch

发明人： Tae Kim ,  Michael Cordoba ,  Howard Kirsch

IPC分类号： G11C7/00

CPC分类号： G11C5/147 ,  G11C16/30 ,  H03K3/356113

摘要： A voltage level translator boosts the gate voltage of a transistor, and increases the gate to source voltage, to allow operation over a wider range of supply voltages. The P/N ratio of transistors in the voltage level translator is therefore increased, and control of the flipping of nodes is dependent on gate voltages as opposed to P/N ratios.

摘要翻译： 电压电平转换器提高晶体管的栅极电压，并增加栅极到源极电压，以允许在更宽的电源电压范围内工作。 因此，电压电平转换器中的晶体管的P / N比被增加，并且节点的翻转的控制取决于栅极电压而不是P / N比。

公开(公告)号：US20060087365A1

公开(公告)日：2006-04-27

申请号：US10972544

申请日：2004-10-25

申请人： Michael Cordoba ,  Hal Butler

发明人： Michael Cordoba ,  Hal Butler

IPC分类号： G05F1/10

CPC分类号： H02M3/073 ,  H02M2003/077

摘要： A voltage pump comprising a charging transistor responsive to a first control signal, the charging transistor operable to connect a node to a first voltage, a pumping capacitor responsive to a second control signal, the pumping capacitor operable to pump additional charge the node, and a pumping transistor responsive to a third control signal, the pumping transistor operable to connect the node to an output, wherein the charging transistor, the pumping capacitor, and the pumping transistor are thin-gate transistors. A method comprising charging a node to a first voltage, boosting the node to a second voltage, and connecting the node to an output, wherein the absolute value of the gate-to-source, gate-to-drain, and drain-to-source voltages of the plurality of thin-gate transistors does not exceed the absolute value of a supply voltage. Because of the rules governing abstracts, this abstract should not be used to construe the claims.

摘要翻译： 一种电压泵，包括响应于第一控制信号的充电晶体管，所述充电晶体管可操作以将节点连接到第一电压，响应于第二控制信号的泵浦电容器，所述泵浦电容器可操作以泵送所述节点附加电荷，以及 响应于第三控制信号的泵浦晶体管，所述泵浦晶体管可操作以将所述节点连接到输出，其中所述充电晶体管，所述泵浦电容器和所述泵浦晶体管是薄栅晶体管。 一种方法，包括将节点充电到第一电压，将所述节点升压到第二电压，以及将所述节点连接到输出，其中所述栅极至源极，栅极至漏极和漏极到漏极的绝对值， 多个薄栅极晶体管的源极电压不超过电源电压的绝对值。 由于管理摘要的规则，本摘要不应用于解释索赔。

公开(公告)号：US20060255835A1

公开(公告)日：2006-11-16

申请号：US11440250

申请日：2006-05-24

申请人： Michael Cordoba

发明人： Michael Cordoba

IPC分类号： H03K19/094

CPC分类号： H03K3/02335 ,  H03K3/35613

摘要： Circuitry and methods for implementing voltage level translators at relatively low source voltages are provided. The circuitry and methods utilize voltage protection circuitry to ensure that voltages in the circuitry do not exceed predetermined thresholds that, if exceeded, would cause malfunction. In one embodiment of the invention, voltage level translation circuitry is provided to boost voltage from a source voltage (e.g., VCC) to a voltage that is higher in potential (e.g., VCCP) than the source voltage. In another embodiment of the invention, voltage level translation circuitry is provided to pull a ground voltage down to a potential (e.g., VBB) that is lower in voltage than the ground voltage.

公开(公告)号：US20050068811A1

公开(公告)日：2005-03-31

申请号：US10675661

申请日：2003-09-29

申请人： Michael Cordoba

发明人： Michael Cordoba

IPC分类号： G05F3/02 ,  G11C5/14 ,  G11C11/4074 ,  H02M3/07 ,  H03K19/094

CPC分类号： G11C5/145 ,  G11C11/4074 ,  H02M3/073 ,  H02M2001/0012

摘要： A charge pump includes a pair of capacitors each having a first terminal coupled to a pumped node. A charge voltage is initially applied to the pumped node to charge the capacitors. A second terminal of the first capacitor is then pumped to increase the voltage at the pumped node, with the charge of the first capacitor being shared with the second capacitor. The second terminal of the second capacitor is then pumped to again increase the voltage at the pumped node. The pumped node is then coupled to an output terminal.

摘要翻译： 电荷泵包括一对电容器，每个电容器具有耦合到泵浦节点的第一端子。 充电电压最初被施加到泵浦节点以对电容器充电。 然后泵送第一电容器的第二端子以增加泵浦节点处的电压，第一电容器的电荷与第二电容器共用。 然后泵浦第二电容器的第二端子以再次增加泵送节点处的电压。 泵送节点然后被耦合到输出端子。

公开(公告)号：US20050275389A1

公开(公告)日：2005-12-15

申请号：US10865725

申请日：2004-06-09

申请人： Michael Cordoba

发明人： Michael Cordoba

IPC分类号： G05F1/40 ,  G05F1/44 ,  H03K3/0233

CPC分类号： H03K3/02335 ,  H03K3/35613

摘要： Circuitry and methods for implementing voltage level translators at relatively low source voltages are provided. The circuitry and methods utilize voltage protection circuitry to ensure that voltages in the circuitry do not exceed predetermined thresholds that, if exceeded, would cause malfunction. In one embodiment of the invention, voltage level translation circuitry is provided to boost voltage from a source voltage (e.g., VCC) to a voltage that is higher in potential (e.g., VCCP) than the source voltage. In another embodiment of the invention, voltage level translation circuitry is provided to pull a ground voltage down to a potential (e.g., VBB) that is lower in voltage than the ground voltage.

摘要翻译： 提供了用于在较低源电压下实现电压电平转换器的电路和方法。 电路和方法利用电压保护电路来确保电路中的电压不超过超过预定阈值，如果超过，将导致故障。 在本发明的一个实施例中，提供电压电平转换电路以将电压从源电压（例如，V CC CC）升高到电位较高的电压（例如，V CCP， / SUB>）。 在本发明的另一个实施例中，提供电压电平转换电路以将地电压降低到电压低于接地电压的电位（例如，V BAT）。

公开(公告)号：US07382177B2

公开(公告)日：2008-06-03

申请号：US10972544

申请日：2004-10-25

申请人： Michael Cordoba ,  Hal Butler

发明人： Michael Cordoba ,  Hal Butler

IPC分类号： G05F3/02

CPC分类号： H02M3/073 ,  H02M2003/077

摘要： A voltage pump comprising a charging transistor responsive to a first control signal, the charging transistor operable to connect a node to a first voltage, a pumping capacitor responsive to a second control signal, the pumping capacitor operable to pump additional charge the node, and a pumping transistor responsive to a third control signal, the pumping transistor operable to connect the node to an output, wherein the charging transistor, the pumping capacitor, and the pumping transistor are thin-gate transistors. A method comprising charging a node to a first voltage, boosting the node to a second voltage, and connecting the node to an output, wherein the absolute value of the gate-to-source, gate-to-drain, and drain-to-source voltages of the plurality of thin-gate transistors does not exceed the absolute value of a supply voltage. Because of the rules governing abstracts, this abstract should not be used to construe the claims.

摘要翻译： 一种电压泵，包括响应于第一控制信号的充电晶体管，所述充电晶体管可操作以将节点连接到第一电压，响应于第二控制信号的泵浦电容器，所述泵浦电容器可操作以泵送所述节点附加电荷，以及 响应于第三控制信号的泵浦晶体管，所述泵浦晶体管可操作以将所述节点连接到输出，其中所述充电晶体管，所述泵浦电容器和所述泵浦晶体管是薄栅晶体管。 一种方法，包括将节点充电到第一电压，将所述节点升压到第二电压，以及将所述节点连接到输出，其中所述栅极至源极，栅极至漏极和漏极到漏极的绝对值， 多个薄栅极晶体管的源极电压不超过电源电压的绝对值。 由于管理摘要的规则，本摘要不应用于解释索赔。

公开(公告)号：US20060087905A1

公开(公告)日：2006-04-27

申请号：US11297624

申请日：2005-12-08

申请人： Michael Cordoba

发明人： Michael Cordoba

IPC分类号： G11C5/14

CPC分类号： G06F13/4072 ,  G11C5/145 ,  G11C5/147 ,  Y02D10/14 ,  Y02D10/151

摘要： A method and apparatus is provided for a voltage translator for performing a voltage-level translation of a signal. The voltage translator of the present invention includes a first transistor that is coupled to a control signal. The control signal is in a first voltage range. The voltage translator also includes a first one-shot circuit driven by the first transistor. The first one-shot circuit is capable of providing a pulse. The voltage translator also includes a second transistor capable of receiving a complementary signal of the control signal. A first pair and a second pair of transistors are included in the voltage translator. Each pair of transistors is operatively coupled to the first and second transistors. The first and second pairs of transistors are adapted to provide a transition of a signal from a first voltage range to a second voltage range.

公开(公告)号：US06031754A

公开(公告)日：2000-02-29

申请号：US184474

申请日：1998-11-02

申请人： Gary F. Derbenwick ,  David A. Kamp ,  Michael Cordoba ,  George B. Coombe

发明人： Gary F. Derbenwick ,  David A. Kamp ,  Michael Cordoba ,  George B. Coombe

IPC分类号： G11C11/22 ,  G11C7/00

CPC分类号： G11C11/22

摘要： A ferroelectric integrated circuit memory includes a memory cell having a ferroelectric capacitor, one electrode of which is connected to a bit line through a transistor, and the other electrode of which is connected to a plate line. The bit line is also connected to system ground through a precharge transistor. In a read cycle, the precharge transistor remains on after the word line goes high connecting the capacitor to the bit line. At least a portion of the linear displacement current that flows to the bit line is drained off to ground via the precharge transistor, thereby increasing the switching voltage across the ferroelectric capacitor. The precharge transistor is turned off before or during the switching of the ferroelectric capacitor. The signal applied to the gate of the precharge transistor is boosted above the supply voltage of the memory to shorten the cycle time.

摘要翻译： 铁电集成电路存储器包括具有铁电电容器的存储单元，其一个电极通过晶体管连接到位线，并且另一个电极连接到板线。 位线也通过预充电晶体管连接到系统地。 在读周期中，在字线连接电容器到位线之后，预充电晶体管保持导通。 流过位线的线性位移电流的至少一部分经由预充电晶体管被排出到地，从而增加了铁电电容器两端的开关电压。 预充电晶体管在铁电电容器的切换之前或期间被关断。 施加到预充电晶体管的栅极的信号被提升到高于存储器的电源电压以缩短周期时间。